Error recovery in RFID reader systems
    32.
    发明申请
    Error recovery in RFID reader systems 有权
    RFID阅读器系统中的错误恢复

    公开(公告)号:US20060236203A1

    公开(公告)日:2006-10-19

    申请号:US11388235

    申请日:2006-03-22

    IPC分类号: H03M13/00

    摘要: RFID systems, devices, software and methods are adapted for receiving from an RFID tag at least waves that communicate at least a first version of its code. An output tag code is output that is the same as the first version, if a fidelity criterion is met regarding the first version. If not met, the output tag code is instead a final version that is reconstructed from the first version, and also from any additionally optionally subsequently received versions. In some embodiments, an error recovery block includes a subcomponent fidelity criterion checking block that can determine whether the fidelity criterion is met, and a code reconstruction block that can derive the final version.

    摘要翻译: RFID系统,设备,软件和方法适于从RFID标签接收至少传达其代码的第一版本的波。 如果满足关于第一版本的保真度标准,输出与第一版本相同的输出标签代码。 如果不满足,则输出标签代码是从第一版本重建的最终版本,也可以是任何另外可选地随后接收的版本。 在一些实施例中,错误恢复块包括可以确定是否满足保真度准则的子组件保真度准则检查块,以及可以导出最终版本的代码重建块。

    Compact non-volatile memory cell and array system
    33.
    发明申请
    Compact non-volatile memory cell and array system 有权
    紧凑型非易失性存储单元和阵列系统

    公开(公告)号:US20060209597A1

    公开(公告)日:2006-09-21

    申请号:US11084213

    申请日:2005-03-17

    IPC分类号: G11C11/34

    CPC分类号: G11C16/24

    摘要: NVM arrays include rows and columns of NVM cells comprising a floating gate, a programming element, and a logic storage element. During a programming or erase mode, the floating gate of each cell is charged to a predetermined level. At the beginning of a read mode, all storage elements are pre-charged to a high supply voltage level. Following the pre-charge, selected cells are read to determine stored bit values. A charge status of the floating gate of each cell determines whether the storage element is turned on and the pre-charge voltage is pulled down corresponding to a bit value.

    摘要翻译: NVM阵列包括包括浮动栅极,编程元件和逻辑存储元件的NVM单元的行和列。 在编程或擦除模式期间,每个单元的浮置栅极被充电到预定的电平。 在读取模式开始时,所有存储元件都被预先充电到高电源电压。 在预充电之后,读取所选择的单元以确定存储的位值。 每个单元的浮动栅极的充电状态确定存储元件是否导通,并且预充电电压相应于位值被下拉。

    RFID tag uncoupling one of its antenna ports and methods
    35.
    发明申请
    RFID tag uncoupling one of its antenna ports and methods 有权
    RFID标签解耦其天线端口之一和方法

    公开(公告)号:US20050212674A1

    公开(公告)日:2005-09-29

    申请号:US10891894

    申请日:2004-07-14

    IPC分类号: G06K19/077 G08B13/14

    CPC分类号: G06K19/07767 G06K19/07749

    摘要: RFID tags have an on-chip antenna and an off-chip antenna. One of the antennas can become uncoupled if the proper signal is received, while the other antenna may still operate. The uncoupled antenna can be the larger one, for example the off-chip antenna. Then the tag can then be read only by the smaller antenna, which effectively reduces the range of the RFID tag, but without disabling it entirely.

    摘要翻译: RFID标签具有片上天线和片外天线。 如果接收到适当的信号,其中一个天线可能会脱耦,而另一个天线仍然可以工作。 非耦合天线可以是较大的天线,例如片外天线。 那么标签然后可以被较小的天线读取,这有效地减少了RFID标签的范围,但是没有完全禁用它。

    Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
    36.
    发明申请
    Method and apparatus for programming single-poly pFET-based nonvolatile memory cells 有权
    用于编程基于单多晶硅pFET的非易失性存储单元的方法和装置

    公开(公告)号:US20050030826A1

    公开(公告)日:2005-02-10

    申请号:US10936282

    申请日:2004-09-07

    IPC分类号: G11C16/34 G11C11/34

    摘要: Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

    摘要翻译: 用于编程基于单多晶硅pFET的非易失性存储单元的方法和装置偏置该单元,从而导致带间隧穿(BTBT),并且由BTBT产生的电子注入到该单元的浮动栅极上。 在预定事件之后,单多晶硅pFET被偏置以引起冲击电离热电子注入(IHEI)。 预定事件可以是例如预定时间段的到期或通过充分进行支持IHEI的BTBT注入处理形成的信道的确定。 使用BTBT允许先前已过度或卡住的位被“解锁”或“移除”,并因此被再次使用(即能够被编程)。

    Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

    公开(公告)号:US20070019477A1

    公开(公告)日:2007-01-25

    申请号:US11528262

    申请日:2006-09-26

    IPC分类号: G11C11/34

    摘要: Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

    RADIO-FREQUENCY IDENTIFICATION TAG WITH OSCILLATOR CALIBRATION
    38.
    发明申请
    RADIO-FREQUENCY IDENTIFICATION TAG WITH OSCILLATOR CALIBRATION 有权
    具有振荡器校准的无线电频率识别标签

    公开(公告)号:US20070001856A1

    公开(公告)日:2007-01-04

    申请号:US11460200

    申请日:2006-07-26

    IPC分类号: G08B13/14

    CPC分类号: G06K19/0723 G06K19/0726

    摘要: A method of calibrating an oscillator within a Radio-Frequency Identification (RFID) tag includes storing a plurality of calibration values within a memory structure. Each of the calibration values corresponds to a respective oscillation frequency of the oscillator. A selected calibration value is selected from the plurality of calibration values stored, according to a first selection criterion. The oscillator is then calibrated in accordance with the selected calibration value.

    摘要翻译: 校准射频识别(RFID)标签内的振荡器的方法包括将多个校准值存储在存储器结构内。 每个校准值对应于振荡器的相应振荡频率。 根据第一选择标准,从存储的多个校准值中选择所选择的校准值。 然后根据所选择的校准值校准振荡器。

    Floating-gate semiconductor structures
    39.
    发明申请

    公开(公告)号:US20050104119A1

    公开(公告)日:2005-05-19

    申请号:US10915108

    申请日:2004-08-09

    摘要: Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog memory, nonvolatile digital memory, or on-line learning in silicon. The memory is nonvolatile because the devices use electrically isolated floating gates to store electronic charge. The devices enable on-line learning because the electron injection and tunneling mechanisms that write the memory can occur during normal device operation. The memory updates and learning are bidirectional because the injection and tunneling mechanisms add and remove electrons from the floating gate, respectively. Because the memory updates depend on both the stored memory and the pFETs terminal voltages, and because they are bidirectional, the devices can implement on-line learning functions.

    RFID reader to select code modules
    40.
    发明申请
    RFID reader to select code modules 有权
    RFID阅读器选择代码模块

    公开(公告)号:US20060145855A1

    公开(公告)日:2006-07-06

    申请号:US11316790

    申请日:2005-12-22

    IPC分类号: G08B13/14 H04Q5/22 G06K7/00

    CPC分类号: G06K7/0008 G06K19/0723

    摘要: An RFID reader comprising an antenna, a memory adapted to store a plurality of code modules, a selector for selecting one of the code modules, and a modulator adapted to operate the antenna in accordance with the selected code module.

    摘要翻译: 一种RFID读取器,包括天线,适于存储多个代码模块的存储器,用于选择代码模块之一的选择器,以及适于根据所选代码模块操作天线的调制器。