公开(公告)号：US11224116B2

公开(公告)日：2022-01-11

申请号：US16853516

申请日：2020-04-20

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ricky Marsh ,  Alex Paterson

IPC: H01J37/32 ,  H05H1/46 ,  H03F3/217

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

公开(公告)号：US10957521B2

公开(公告)日：2021-03-23

申请号：US15991021

申请日：2018-05-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Yuhou Wang ,  Michael John Martin ,  Jon Mcchesney ,  Alexander Miller Paterson

IPC: H01J37/32 ,  G06T7/00 ,  H01L21/66

Abstract: A system includes an image processing module configured to receive an image, captured by an imaging device, of a plasma environment within a substrate processing chamber during processing of a substrate and extract one or more features of the image indicative of a plasma sheath formed within the plasma environment during the processing of the substrate. A control module is configured to determine a plasma sheath profile based on the one or more features extracted from the image and selectively adjust at least one processing parameter related to the processing of the substrate based on the plasma sheath profile.

公开(公告)号：US20190215942A1

公开(公告)日：2019-07-11

申请号：US16356180

申请日：2019-03-18

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ricky Marsh ,  Alex Paterson

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32174 ,  H01J37/32183 ,  H03F3/2173 ,  H05H2001/4652 ,  H05H2001/4675 ,  H05H2001/4682 ,  H05H2242/10

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.