公开(公告)号：US20160155893A1

公开(公告)日：2016-06-02

申请号：US15016943

申请日：2016-02-05

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Cem Basceri ,  Vladimir Odnoblyudov ,  Casey Kurth ,  Thomas Gehrke

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/02 ,  H01L33/16 ,  H01L33/46

Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

公开(公告)号：US09082748B2

公开(公告)日：2015-07-14

申请号：US13646307

申请日：2012-10-05

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri ,  Thomas Gehrke

IPC: H01L29/15 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/42316 ,  H01L29/0603 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/16227

Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料和外延衬底的堆叠进一步限定主体区域，其包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。

公开(公告)号：US20140151857A1

公开(公告)日：2014-06-05

申请号：US14176961

申请日：2014-02-10

Applicant: Micron Technology, Inc.

Inventor： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

IPC: H01L29/06 ,  H01L21/324 ,  B01J20/34

CPC classification number: H01L29/06 ,  B01J20/3483 ,  B01J38/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4412 ,  H01L21/324 ,  H01L23/58 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract translation: 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。

公开(公告)号：US20130231240A1

公开(公告)日：2013-09-05

申请号：US13858644

申请日：2013-04-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

IPC: H01L23/58 ,  B01J38/02

CPC classification number: H01L29/06 ,  B01J20/3483 ,  B01J38/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4412 ,  H01L21/324 ,  H01L23/58 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract translation: 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。