公开(公告)号：US20220013160A1

公开(公告)日：2022-01-13

申请号：US17448976

申请日：2021-09-27

Applicant: Micron Technology, Inc.

Inventor： Kenneth W. Marr ,  Michael A. Smith

IPC: G11C11/4078 ,  G11C11/16 ,  G11C11/22 ,  G11C7/24 ,  G11C8/20 ,  G11C16/04 ,  G11C16/22

Abstract: Devices are disclosed. A device may include a source configured to couple to a number of memory cells. The device may also include at least one transistor coupled between the source and a ground voltage. Further, the device may include an antifuse coupled between the at least one transistor and the ground voltage. Methods and systems are also disclosed.

公开(公告)号：US20210319827A1

公开(公告)日：2021-10-14

申请号：US16846120

申请日：2020-04-10

Applicant: Micron Technology, Inc.

Inventor： Kenneth W. Marr ,  Michael A. Smith

IPC: G11C11/4078 ,  G11C16/04 ,  G11C16/22

Abstract: Memory devices are disclosed. A memory device may include a source (SRC) plate configured to couple to a number of memory cells. The memory device may also include a resistor coupled between the source plate and a node. Further, the memory device may include at least one transistor coupled between the source plate and the ground voltage, wherein a gate of the at least one transistor is coupled to the node. The transistor may be configured to couple the SRC plate to the ground voltage during a processing stage. The transistor may further be configured to isolate the SRC plate from the ground voltage during an operation stage. Methods and electronic systems are also disclosed.

公开(公告)号：US11139289B2

公开(公告)日：2021-10-05

申请号：US16543724

申请日：2019-08-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael A. Smith ,  Kenneth W. Marr

IPC: H01L27/02 ,  H01L21/8234 ,  H01L21/321 ,  H01L29/06 ,  H01L27/11526 ,  H01L27/11573 ,  G11C16/22 ,  H01L21/28 ,  H01L21/3213 ,  G11C16/14 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/311

Abstract: Methods of forming a circuit-protection device include forming a dielectric having a first thickness and a second thickness greater than the first thickness over a semiconductor, forming a conductor over the dielectric, and patterning the conductor to retain a portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness, wherein the retained portion of the conductor defines a control gate of a field-effect transistor of the circuit-protection device, as well as apparatus having such circuit-protection devices.

公开(公告)号：US10580766B2

公开(公告)日：2020-03-03

申请号：US16543715

申请日：2019-08-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael A. Smith ,  Kenneth W. Marr

IPC: H01L21/28 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/321 ,  H01L29/06 ,  H01L27/11526 ,  H01L27/11573 ,  G11C16/22 ,  H01L21/311 ,  H01L21/3213 ,  G11C16/14 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: Methods of forming a circuit-protection device include forming a dielectric having a first thickness and a second thickness greater than the first thickness over a semiconductor, forming a conductor over the dielectric, and patterning the conductor to retain a portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness, wherein the retained portion of the conductor defines a control gate of a field-effect transistor of the circuit-protection device.