EUV ILLUMINATION SYSTEM
    31.
    发明申请
    EUV ILLUMINATION SYSTEM 有权
    EUV照明系统

    公开(公告)号:US20070295919A1

    公开(公告)日:2007-12-27

    申请号:US11755334

    申请日:2007-05-30

    IPC分类号: G21K5/00

    摘要: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either gratingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element. In this second variant, the optical axis meets the third, fourth and fifth optical elements at an angle of incidence which is greater than 70°. This construction variants make possible either an increase of the EUV throughput of the illumination system for a given size, or a reduction of the size of the illumination system and thus of the associated projection exposure system for a given EUV throughput.

    摘要翻译: 照明系统用于用EUV辐射照射物体表面的指定照明场。 照明系统具有EUV源和收集器以将EUV辐射集中在光轴的方向上。 提供第一光学元件以产生二次光源,并且在这些次级光源的位置处提供第二光学元件,第二光学元件是包括另外的光学元件的光学器件的一部分,并且其将第一光学元件 元素进入图像平面进入照明场。 在收集器和照明场之间,最多设置五个反射光学元件。 这些光学元件以光栅或陡峭的方式反射主光束。 投射到照明主平面上的光轴在源轴部分和场轴部分之间偏转大于30°。 在照明系统的第一变型中,至少两个反射光学元件之间的至少一个轴部分相对于照明主平面倾斜。 在照明系统的第二变型中,除了第二光学元件之外,光学器件精确地包括三个另外的光学元件,即第三光学元件,第四光学元件和第五光学元件。 在该第二变型中,光轴以大于70°的入射角与第三,第四和第五光学元件相遇。 这种构造变型使给定尺寸的照明系统的EUV吞吐量增加,或者对于给定的EUV吞吐量,照明系统的大小以及相关联的投影曝光系统的减小成为可能。

    Facet mirror for use in a projection exposure apparatus for microlithography
    32.
    发明授权
    Facet mirror for use in a projection exposure apparatus for microlithography 有权
    用于微光刻的投影曝光装置的分面镜

    公开(公告)号:US09411241B2

    公开(公告)日:2016-08-09

    申请号:US12848603

    申请日:2010-08-02

    摘要: A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.

    摘要翻译: 在用于微光刻的投影曝光装置中,将使用小平面镜作为束引导光学部件。 小平面镜具有多个独立的反射镜。 对于入射照明光的单独偏转,分离的反射镜在每种情况下都以致动器的方式连接,使得它们可以围绕至少一个倾斜轴线单独倾斜。 连接到致动器的控制装置被配置成使得可以将分离的反射镜的给定分组分组成分离的反射镜组,每个反射镜组在每种情况下包括至少两个分离的反射镜。 其结果是,当安装在投影曝光装置中时,增加了用于设置由投影曝光装置照亮的对象场的各种照明几何形状的可变性的刻面镜。 描述了用于形成小平面反射镜的分立反射镜的各种实施例。

    Component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus
    33.
    发明授权
    Component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus 有权
    用于在微光刻投影曝光设备的物平面中设置扫描集成照明能量的组件

    公开(公告)号:US09310692B2

    公开(公告)日:2016-04-12

    申请号:US12916882

    申请日:2010-11-01

    IPC分类号: G03B27/52 G03F7/20

    摘要: A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.

    摘要翻译: 公开了一种用于在微光刻投影曝光装置的物平面中设置扫描集成照明能量的部件。 该部件包括多个隔膜,它们相对于垂直于扫描移动的方向彼此并排布置,并且其形状不同,其位置可以在扫描方向上大致改变,使得照射能量的一部分 可以由至少一个隔膜取消。 单个隔膜的形式特别适用于其中布置有该部件的隔膜平面中的照明形式。 这具有以下效果:在隔膜的任意位移的情况下,两个隔膜的至少一部分限界边缘总是不同。

    Illumination optical system and optical systems for microlithography
    34.
    发明授权
    Illumination optical system and optical systems for microlithography 有权
    照明光学系统和光刻系统

    公开(公告)号:US09164394B2

    公开(公告)日:2015-10-20

    申请号:US13216677

    申请日:2011-08-24

    申请人: Martin Endres

    发明人: Martin Endres

    IPC分类号: G03F7/20

    摘要: An imaging optical system for microlithography is used to illuminate an object field. The illumination optical system has a first transmission optical system for guiding illumination light proceeding from a light source. An illumination presetting facet mirror with a plurality of illumination presetting facets is arranged downstream of the first transmission optical system. The illumination presetting facet mirror produces a preset illumination of the object field via an edge shape, which can be illuminated, of the illumination presetting facet mirror and individual tilting angles of the illumination presetting facets. An arrangement of the first transmission optical system and the illumination presetting facet mirror is such that telecentric illumination of the object field results. An optical system according to a further aspect has, between the illumination presetting facet mirror and the object field, an entry pupil plane of a projection optical system, which, together with the illumination optical system, belongs to an optical system for microlithography. In this aspect, the first transmission optical system and the illumination presetting facet mirror are arranged to illuminate the object field adapted to the entry pupil of the projection optical system. In further aspects within an optical system with a projection optical system and an illumination optical system, a large object-image offset or a large intermediate focus-image offset is present in relation to an installation length of the projection optical system. Illumination optical systems and optical systems which satisfy particular efficiency demands with regard to the use of the illumination light result.

    摘要翻译: 用于微光刻的成像光学系统用于照亮物体场。 照明光学系统具有用于引导从光源进行的照明光的第一透射光学系统。 具有多个照明预设小面的照明预设小面镜布置在第一传输光学系统的下游。 照明预设小平面镜通过可照明的照明预设小平面镜的边缘形状和照明预设面的各个倾斜角度来产生对象场的预设照明。 第一传输光学系统和照明预设小面镜的布置使得物场的远心照明产生。 根据另一方面的光学系统在照明预设面镜和物场之间具有投影光学系统的入射光瞳面,其与照明光学系统一起属于用于微光刻的光学系统。 在这方面,第一透射光学系统和照明预设小面镜布置成照亮适合于投影光学系统的入射光瞳的物体场。 在具有投影光学系统和照明光学系统的光学系统的另外的方面,相对于投影光学系统的安装长度存在大的物体图像偏移或大的中间聚焦图像偏移。 满足特定效率要求的照明光学系统和光学系统关于使用照明光的照明结果。

    Method for producing a multilayer coating, optical element and optical arrangement
    35.
    发明授权
    Method for producing a multilayer coating, optical element and optical arrangement 有权
    制造多层涂层,光学元件和光学布置的方法

    公开(公告)号:US08457281B2

    公开(公告)日:2013-06-04

    申请号:US12965280

    申请日:2010-12-10

    IPC分类号: G21K1/06

    摘要: A method for producing a multilayer coating (17) for reflecting radiation in the soft X-ray or EUV wavelength range on an optical element (8, 9) operated at an operating temperature (TOP) of 30° C. or more, including: determining an optical design for the multilayer coating (17) which defines an optical desired layer thickness (nOP dOP) of the layers (17.1, 17.2) of the multilayer coating (17) at the operating temperature (TOP), and applying the layers (17.1, 17.2) of the multilayer coating (17) with an optical actual layer thickness (nB dB) chosen such that a layer thickness change(nOP dOP−nB dB) caused by thermal expansion of the layers (17.1, 17.2) between the coating temperature (TB) and the operating temperature (TOP) is compensated for. Also provided are an associated optical element (8, 9) and a projection exposure apparatus having at least one such optical element (8, 9).

    摘要翻译: 一种制造用于在操作温度(TOP)为30℃以上的光学元件(8,9)上反射软X射线或EUV波长范围内的辐射的多层涂层(17)的方法,包括: 确定多层涂层(17)的光学设计,其在工作温度(TOP)下限定多层涂层(17)的层(17.1,17.2)的光学期望层厚度(nOP dOP),并施加层 选择具有光学实际层厚度(nB dB)的多层涂层(17)的17.1,17.2),使得由涂层(17.1,17.2)之间的层(17.1,17.2)的热膨胀引起的层厚度变化(nOP dOP-nB dB) 温度(TB)和工作温度(TOP)得到补偿。 还提供有相关联的光学元件(8,9)和具有至少一个这种光学元件(8,9)的投影曝光设备。

    IMAGING OPTICS
    36.
    发明申请
    IMAGING OPTICS 审中-公开
    成像光学

    公开(公告)号:US20120274917A1

    公开(公告)日:2012-11-01

    申请号:US13482794

    申请日:2012-05-29

    IPC分类号: G03B27/70 G03B27/32 G02B17/06

    摘要: An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.

    摘要翻译: 提供了一种用于光刻投影曝光的成像光学装置,用于通过多个反射镜引导波长短于193nm的成像光束,用于在物体平面中的物体场中的反射物体成像成图像 场中的图像平面。 物体场点具有小于3°的中心射线角度。 至少一个镜子是近场镜。 成像光学元件可以允许反射物体的高质量成像。

    EUV illumination system
    37.
    发明授权
    EUV illumination system 有权
    EUV照明系统

    公开(公告)号:US08227770B2

    公开(公告)日:2012-07-24

    申请号:US12535249

    申请日:2009-08-04

    IPC分类号: A61N5/00 G21G5/00

    摘要: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element.

    摘要翻译: 照明系统用于用EUV辐射照射物体表面的指定照明场。 照明系统具有EUV源和收集器以将EUV辐射集中在光轴的方向上。 提供第一光学元件以产生二次光源,并且在这些次级光源的位置处提供第二光学元件,第二光学元件是包括另外的光学元件的光学器件的一部分,并且其将第一光学元件 元素进入图像平面进入照明场。 在收集器和照明场之间,最多设置五个反射光学元件。 这些光学元件既可以粗略地或者陡峭地反射主光束。 投射到照明主平面上的光轴在源轴部分和场轴部分之间偏转大于30°。 在照明系统的第一变型中,至少两个反射光学元件之间的至少一个轴部分相对于照明主平面倾斜。 在照明系统的第二变型中,除了第二光学元件之外,光学器件精确地包括三个另外的光学元件,即第三光学元件,第四光学元件和第五光学元件。

    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY
    38.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY 审中-公开
    EUV微观光谱的照明光学

    公开(公告)号:US20110235015A1

    公开(公告)日:2011-09-29

    申请号:US13076730

    申请日:2011-03-31

    IPC分类号: G03B27/72

    摘要: An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.

    摘要翻译: 用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。 预设设备预设照明参数。 照明校正装置校正物场照明的强度分布和/或角分布。 后者具有光学部件,使用的辐射束至少部分地施加在物场的上游,并且可以以受控的方式驱动。 检测器获取照明参数之一。 评估装置评估检测器数据并将其转换成控制信号。 至少一个致动器移动光学部件。 在曝光期间,在投影曝光期间借助于检测器信号来控制致动器。 确保物体边缘朝向待曝光物体的8μm以下的最大位移。 结果是一个照明光学器件,用于确保符合预设的照明参数,即使在最严格的精度要求下。

    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY
    39.
    发明申请
    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY 有权
    投影目标的微观算法

    公开(公告)号:US20110026003A1

    公开(公告)日:2011-02-03

    申请号:US12884670

    申请日:2010-09-17

    IPC分类号: G03B27/72

    摘要: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

    摘要翻译: 用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。 投影物镜包括至少六个反射镜,其中至少一个反射镜具有自由形反射表面。 投影物镜的总长(T)与物体像偏移(dOIS)之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。 投影物镜可以具有多个反射镜,其中总长度(T)和物体图像偏移(dOIS)之间的比率小于2。