摘要:
An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either gratingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element. In this second variant, the optical axis meets the third, fourth and fifth optical elements at an angle of incidence which is greater than 70°. This construction variants make possible either an increase of the EUV throughput of the illumination system for a given size, or a reduction of the size of the illumination system and thus of the associated projection exposure system for a given EUV throughput.
摘要:
A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.
摘要:
A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.
摘要:
An imaging optical system for microlithography is used to illuminate an object field. The illumination optical system has a first transmission optical system for guiding illumination light proceeding from a light source. An illumination presetting facet mirror with a plurality of illumination presetting facets is arranged downstream of the first transmission optical system. The illumination presetting facet mirror produces a preset illumination of the object field via an edge shape, which can be illuminated, of the illumination presetting facet mirror and individual tilting angles of the illumination presetting facets. An arrangement of the first transmission optical system and the illumination presetting facet mirror is such that telecentric illumination of the object field results. An optical system according to a further aspect has, between the illumination presetting facet mirror and the object field, an entry pupil plane of a projection optical system, which, together with the illumination optical system, belongs to an optical system for microlithography. In this aspect, the first transmission optical system and the illumination presetting facet mirror are arranged to illuminate the object field adapted to the entry pupil of the projection optical system. In further aspects within an optical system with a projection optical system and an illumination optical system, a large object-image offset or a large intermediate focus-image offset is present in relation to an installation length of the projection optical system. Illumination optical systems and optical systems which satisfy particular efficiency demands with regard to the use of the illumination light result.
摘要:
A method for producing a multilayer coating (17) for reflecting radiation in the soft X-ray or EUV wavelength range on an optical element (8, 9) operated at an operating temperature (TOP) of 30° C. or more, including: determining an optical design for the multilayer coating (17) which defines an optical desired layer thickness (nOP dOP) of the layers (17.1, 17.2) of the multilayer coating (17) at the operating temperature (TOP), and applying the layers (17.1, 17.2) of the multilayer coating (17) with an optical actual layer thickness (nB dB) chosen such that a layer thickness change(nOP dOP−nB dB) caused by thermal expansion of the layers (17.1, 17.2) between the coating temperature (TB) and the operating temperature (TOP) is compensated for. Also provided are an associated optical element (8, 9) and a projection exposure apparatus having at least one such optical element (8, 9).
摘要:
An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.
摘要:
An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element.
摘要:
An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.
摘要:
A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.
摘要:
The disclosure relates to illumination systems for projection exposure apparatuses, projection exposure apparatus, and related components, systems and methods. The illumination systems can be configured to be used with wavelengths less than 193 nm.