公开(公告)号：US06248606B1

公开(公告)日：2001-06-19

申请号：US09219137

申请日：1998-12-22

申请人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

发明人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L29/66757

摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

摘要翻译： 在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管 一个芯片的分段区域。 此后，在分割区域内形成一个图像（帧）的像素电极。 在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。 通过间歇式热处理，促进了半导体薄膜的结晶化。 此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

公开(公告)号：US06190949B1

公开(公告)日：2001-02-20

申请号：US08861197

申请日：1997-05-21

申请人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

发明人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/28273 ,  H01L29/66765 ,  H01L29/78678 ,  Y10T428/24372

摘要： A process of forming a silicon thin film includes the steps of: irradiating a pulsed rectangular ultraviolet beam on an amorphous or polycrystalline silicon layer formed on a base body, to thereby form a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body. In this process, the moved amount of a ultraviolet beam irradiating position in a period from completion of an irradiation of the rectangular ultraviolet beam to starting of the next irradiation of the rectangular ultraviolet beam is specified at 40 &mgr;m or less, and a ratio of the moved amount to a width of the rectangular ultraviolet beam measured in the movement direction thereof is in a range of 0.1 to 5%. Further, a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.

摘要翻译： 形成硅薄膜的方法包括以下步骤：在形成在基体上的非晶或多晶硅层上照射脉冲的矩形紫外线，从而形成由一组硅单晶粒构成的硅薄膜， 每个大致矩形，并且在基体上以网格图案排列。 在该处理中，在从矩形紫外线的照射完成到矩形紫外线的下一次照射开始的期间内的紫外线照射位置的移动量规定为40μm以下， 在其移动方向上测量的矩形紫外线的宽度的移动量在0.1〜5％的范围内。 此外，硅单晶粒到基体表面的选定取向大约为<100>方向。

公开(公告)号：US5888839A

公开(公告)日：1999-03-30

申请号：US429613

申请日：1995-04-27

申请人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

发明人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

摘要翻译： 在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管 一个芯片的分段区域。 此后，在分割区域内形成一个图像（帧）的像素电极。 在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。 通过间歇式热处理，促进了半导体薄膜的结晶化。 此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

公开(公告)号：US5412493A

公开(公告)日：1995-05-02

申请号：US125802

申请日：1993-09-24

申请人： Masafumi Kunii ,  Yuji Hayashi

发明人： Masafumi Kunii ,  Yuji Hayashi

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  G02F1/136 ,  H01L29/76

CPC分类号： G02F1/13454 ,  H01L27/1214 ,  H01L29/6675 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78645

摘要： A thin film transistor structure for a liquid crystal display device of the active matrix type, wherein leak current is suppressed to stabilize the threshold voltage and the dispersion in the gate capacitance coupling and the channel length are minimized, is disclosed. The liquid crystal display device comprises a substrate having picture element electrodes arranged in a matrix and switching elements for driving the picture element electrodes, another substrate having opposing electrodes thereon and opposed to the former substrate, and a liquid crystal layer held between the substrates. Each switching element has a multi-gate structure wherein two thin film transistors are connected in series and gate electrodes are electrically connected to each other. Each thin film transistor has a lightly doped drain structure wherein a low density impurity region of the same conductivity type as that of a source region or a drain region is provided at least between the source or drain region and a channel region. At least one of a plurality of such low density impurity regions may have a length or a density different from that of the other low density impurity regions so as to assure sufficient on-current while suppressing the leak current.

摘要翻译： 公开了一种用于有源矩阵型液晶显示装置的薄膜晶体管结构，其中抑制泄漏电流以稳定阈值电压，并且栅极电容耦合中的色散和沟道长度最小化。 液晶显示装置包括具有以矩阵形式设置的像素电极的基板和用于驱动图像元素电极的开关元件，在其上具有与之前的基板相对的相对电极的另一基板以及保持在基板之间的液晶层。 每个开关元件具有多栅极结构，其中两个薄膜晶体管串联连接，并且栅电极彼此电连接。 每个薄膜晶体管具有轻掺杂漏极结构，其中至少在源极或漏极区域与沟道区域之间提供与源极区域或漏极区域相同导电类型的低密度杂质区域。 多个这样的低密度杂质区域中的至少一个可以具有与其它低密度杂质区域的长度或密度不同的长度或密度，以便在抑制泄漏电流的同时确保足够的导通电流。