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31.发明授权Method for optimizing source and mask to control line width roughness and image log slope 有权优化源和掩码以控制线宽粗糙度和图像对数斜率的方法公开(公告)号：US08372565B2
公开(公告)日：2013-02-12
申请号：US12872312
申请日：2010-08-31
申请人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
发明人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
IPC分类号： G03F9/00
CPC分类号： G03F1/70 , G03F7/70433
摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.
摘要翻译： 一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。
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32.发明申请METHOD FOR OPTIMIZING SOURCE AND MASK TO CONTROL LINE WIDTH ROUGHNESS AND IMAGE LOG SLOPE 有权用于优化源和掩码以控制线宽度粗糙度和图像日志斜率的方法公开(公告)号：US20120052418A1
公开(公告)日：2012-03-01
申请号：US12872312
申请日：2010-08-31
申请人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
发明人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
CPC分类号： G03F1/70 , G03F7/70433
摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.
摘要翻译： 一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。
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公开(公告)号：US20120008134A1
公开(公告)日：2012-01-12
申请号：US12834379
申请日：2010-07-12
申请人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G01N21/00
CPC分类号： G03F1/36 , G03F7/70116 , G03F7/70125 , G03F7/70525
摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.
摘要翻译： 使用曝光工具中的可编程照明器来增加刀具匹配的自由度。 提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。 光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。 该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。 该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。 此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。
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公开(公告)号：US20100283982A1
公开(公告)日：2010-11-11
申请号：US12463742
申请日：2009-05-11
IPC分类号： G03B27/54
摘要： A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
摘要翻译： 用于等亮度优化的结构和方法。 该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案，产生多个亮点的多个联合特征向量和多个暗点 选择预定数量的联合特征向量以投影所述多个亮图案，从所述多个亮点生成多个自然采样点，其中所述多个自然采样点具有基本相等的强度，并且获得孔径的表示 从所述多个天然采样点开始，其中所述孔的表示的图像具有基本均匀的强度。
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35.发明申请CALCULATING IMAGE INTENSITY OF MASK BY DECOMPOSING MANHATTAN POLYGON BASED ON PARALLEL EDGE 有权基于平行边缘分解曼哈顿多边形计算蒙片的图像强度公开(公告)号：US20090185740A1
公开(公告)日：2009-07-23
申请号：US12015768
申请日：2008-01-17
IPC分类号： G06K9/00
摘要： A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask.
摘要翻译： 公开了一种用于计算集成电路处理中使用的掩模的图像强度的方法，系统，计算机程序产品和表查找系统。 方法可以包括：基于曼哈顿多边形沿着一个维度的平行边缘，将掩模的曼哈顿多边形分解为分解区域; 基于表查找确定每个分解区域的卷积; 基于分解区域的卷积确定曼哈顿多边形的相干系统贡献的总和; 并输出确定的用于分析掩模的相干系统贡献的总和。
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36.发明授权Calculating image intensity of mask by decomposing Manhattan polygon based on parallel edge 有权通过基于平行边缘分解曼哈顿多边形来计算掩模的图像强度公开(公告)号：US08059885B2
公开(公告)日：2011-11-15
申请号：US12015768
申请日：2008-01-17
IPC分类号： G06K9/00
摘要： A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask.
摘要翻译： 公开了一种用于计算集成电路处理中使用的掩模的图像强度的方法，系统，计算机程序产品和表查找系统。 方法可以包括：基于曼哈顿多边形沿着一个维度的平行边缘，将掩模的曼哈顿多边形分解为分解区域; 基于表查找确定每个分解区域的卷积; 基于分解区域的卷积确定曼哈顿多边形的相干系统贡献的总和; 并输出确定的用于分析掩模的相干系统贡献的总和。
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37.发明授权Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 有权反光膜界面，以恢复光刻处理中的横向磁波对比度公开(公告)号：US08125618B2
公开(公告)日：2012-02-28
申请号：US12208358
申请日：2008-09-11
申请人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
IPC分类号： G03F7/20
CPC分类号： G03F7/70216
摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译： 一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。 成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。 光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分 从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。
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38.发明授权公开(公告)号：US08078995B2
公开(公告)日：2011-12-13
申请号：US12349104
申请日：2009-01-06
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： Modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography, is provided. An isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask.
摘要翻译： 提供了用于制造半导体集成电路的光掩模设计中使用的光刻工艺的建模，特别是对由于照明光与掩模形貌的相互作用而引起的复杂影响的建模。 通过对于照明的组件，确定具有有限厚度的特征边缘上的电场与薄掩模表示的相应特征边缘之间的差异来提供对掩模的薄掩模表示的异场扰动。 从每个照明偏振的差的加权相干组合获得异场扰动。 通过将薄掩模表示与应用于掩模的每个边缘的异场扰动组合来表示具有形貌边缘的掩模的电场。
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39.发明授权Method and system for obtaining bounds on process parameters for OPC-verification 有权用于获取OPC验证过程参数界限的方法和系统公开(公告)号：US08059884B2
公开(公告)日：2011-11-15
申请号：US11937073
申请日：2007-11-08
IPC分类号： G06K9/20
CPC分类号： G06K9/036 , G03F7/70441
摘要： Embodiments of the present invention provide a method of performing printability verification of a mask layout. The method includes creating one or more tight clusters; computing a set of process parameters associated with a point on said mask; comparing said set of process parameters to said one or more tight clusters; and reporting an error when at least one of said process parameters is away from said one or more tight clusters.
摘要翻译： 本发明的实施例提供了一种执行掩模布局的可印刷性验证的方法。 该方法包括创建一个或多个紧密簇; 计算与所述掩模上的点相关联的一组过程参数; 将所述一组过程参数与所述一个或多个紧密簇进行比较; 并且当至少一个所述过程参数远离所述一个或多个紧密簇时报告错误。
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40.发明申请EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER 有权EMF校正模型校准使用不对称因子数据从空中图像或图形层公开(公告)号：US20110239169A1
公开(公告)日：2011-09-29
申请号：US12748513
申请日：2010-03-29
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , G03F1/70 , G03F7/70283 , G03F7/70441
摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.
摘要翻译： 提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量 代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。 该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。 或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征 。
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