摘要:
Graphical User Interfaces (GUIs) are presented for configuring and setting-up dynamic sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.
摘要:
A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.
摘要:
A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.
摘要:
Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.
摘要:
A processing method of processing a substrate is presented that includes: receiving pre-process data, wherein the pre-process data comprises a desired process result and actual measured data for the substrate; determining a required process result, wherein the required process result comprises the difference between the desired process result and the actual measured data; creating a new process recipe by modifying a nominal recipe obtained from a processing tool using at least one of a static recipe and a formula model, wherein the new process recipe provides a new process result that is approximately equal to the required process result; and sending the new process recipe to the processing tool and the substrate.
摘要:
A method of creating a virtual profile library includes obtaining a reference signal. The reference signal was generated by measuring a signal off a reference structure on a semiconductor wafer with a metrology device. The reference signal is compared to a plurality of signals in a first library. The comparison is stopped if a first matching criteria is met. The reference signal is compared to a plurality of signals in a second library. The comparison is stopped if a second matching criteria is met. A virtual profile data space is created when the first and second matching criteria are not met. The virtual profile data space is created using differences between a profile data space associated with the first library and a profile data space associated with the second library. A first virtual profile signal is created in the virtual profile data space. A virtual profile shape and/or virtual profile parameters is created based on the first virtual profile signal. A difference is calculated between the reference signal and the first virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, the first virtual profile signal and the virtual profile data, which includes the virtual profile shape and/or virtual profile parameters, associated with the first virtual profile signal is stored. Or, if the virtual profile library creation criteria is not met, a corrective action is applied.
摘要:
An Advanced Process Control (APC) system including Graphical User Interfaces (GUIs) is presented for monitoring and controlling a semiconductor manufacturing process that is performed by a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors, and the APC system comprises an APC server, database, interface server, client workstation, and GUI component. The GUI is web-based and is viewable by a user using a web browser.
摘要:
An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.
摘要:
An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.
摘要:
A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.