公开(公告)号：US20090289179A1

公开(公告)日：2009-11-26

申请号：US12126456

申请日：2008-05-23

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H05H3/02

CPC classification number: H05H3/02 ,  H01J37/32357 ,  H01J37/32422

Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括被配置为将电子从第一等离子体区域加速到第二等离子体区域中的电子加速构件。 此外，中性束源包括泵送系统，其能够使用中性束源用于诸如蚀刻工艺的半导体处理应用。

公开(公告)号：US07542859B2

公开(公告)日：2009-06-02

申请号：US11394859

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel J. Prager

Inventor： Merritt Funk ,  Daniel J. Prager

IPC: G01R13/00

CPC classification number: G01B11/24 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615

Abstract: A method of creating a virtual profile library includes obtaining a reference signal. The reference signal is compared to a plurality of signals in a first library. The reference signal is compared to a plurality of signals in a second library. A virtual profile data space is created when first and second matching criteria are not met. The virtual profile data space is created using differences between a profile data spaces associated with the first and second libraries. A first virtual profile signal is created in the virtual profile data space. A difference is calculated between the reference signal and the first virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, the first virtual profile signal and the virtual profile data, associated with the first virtual profile signal is stored.

Abstract translation: 创建虚拟简档库的方法包括获得参考信号。 将参考信号与第一库中的多个信号进行比较。 将参考信号与第二库中的多个信号进行比较。 当不满足第一和第二匹配条件时，创建虚拟配置文件数据空间。 使用与第一和第二库相关联的简档数据空间之间的差异来创建虚拟简档数据空间。 在虚拟配置文件数据空间中创建第一虚拟配置文件信号。 在参考信号和第一虚拟轮廓信号之间计算差。 将差异与虚拟简档库创建标准进行比较。 如果满足虚拟简档库创建标准，则存储与第一虚拟简档信号相关联的第一虚拟简档信号和虚拟简档数据。

公开(公告)号：US07502709B2

公开(公告)日：2009-03-10

申请号：US11390412

申请日：2006-03-28

Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

IPC: G06F3/00

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre-processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre-processing confidence map are within confidence limits established for the damascene process.

Abstract translation: 一种监测双镶嵌程序的方法，包括计算镶嵌过程的预处理置信度图，所述预处理置信图包括晶片上的第一组模具的置信度数据。 当预处理置信图中的一个或多个值不在为大马士革过程建立的置信限度内时，为镶嵌过程建立扩展的预处理测量配方。 当预处理置信图中的一个或多个值在为大马士革过程建立的置信限度内时，建立了用于第一镶嵌工艺的减少的预处理测量配方。

公开(公告)号：US07487053B2

公开(公告)日：2009-02-03

申请号：US11394860

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel J. Prager

Inventor： Merritt Funk ,  Daniel J. Prager

IPC: G01F19/00

CPC classification number: G01N21/4788

Abstract: A method of refining a virtual profile library includes obtaining a reference signal measured off a reference structure on a semiconductor wafer with a metrology device. A best match is selected of the reference signal in a virtual profile data space. The virtual profile data space has data points with specified accuracy values. The data points represent virtual profile parameters and associated virtual profile signals. The virtual profile parameters characterize the profile of an integrated circuit structure. The best match being a data point of the profile data space with a signal closest to the reference signal. Refined virtual profile parameters are determined corresponding to the reference signal based on the virtual profile parameters of the selected virtual profile signal using a refinement procedure.

Abstract translation: 精细虚拟简档库的方法包括：使用测量装置获得在半导体晶片上的参考结构测量的参考信号。 在虚拟简档数据空间中选择参考信号的最佳匹配。 虚拟配置文件数据空间具有指定精度值的数据点。 数据点表示虚拟轮廓参数和相关联的虚拟轮廓信号。 虚拟轮廓参数表征集成电路结构的轮廓。 最佳匹配是具有最接近参考信号的信号的简档数据空间的数据点。 使用细化过程，基于所选虚拟简档信号的虚拟简档参数，对应于参考信号来确定精细虚拟简档参数。

公开(公告)号：US07479463B2

公开(公告)日：2009-01-20

申请号：US11684154

申请日：2007-03-09

Applicant: John Kulp ,  Michael Carcasi ,  Merritt Funk

Inventor： John Kulp ,  Michael Carcasi ,  Merritt Funk

IPC: H01L21/312

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109

Abstract: Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 本文通常描述用于加热衬底和牺牲层的装置和方法的实施例。 可以描述和要求保护其他实施例。

公开(公告)号：US20070237383A1

公开(公告)日：2007-10-11

申请号：US11390469

申请日：2006-03-28

Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Prager ,  Wesley Natzle

Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Prager ,  Wesley Natzle

IPC: G06K9/00

CPC classification number: G03F7/70625 ,  G03F7/70525

Abstract: A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.

Abstract translation: 提出了一种处理晶片的方法，其包括使用测量的用于晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，或 掩码数据。 为晶片计算至少一个预处理预测图。 计算晶片的预处理置信图。 预处理置信图包括晶片上的多个管芯的一组置信数据。 当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。 然后创建包含优先测量站点的新测量配方。

公开(公告)号：US20070231930A1

公开(公告)日：2007-10-04

申请号：US11390412

申请日：2006-03-28

Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Prager ,  Wesley Natzle

Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Prager ,  Wesley Natzle

IPC: H01L21/66

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre-processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre-processing confidence map are within confidence limits established for the damascene process.

Abstract translation: 一种监测双镶嵌程序的方法，包括计算镶嵌过程的预处理置信度图，所述预处理置信图包括晶片上的第一组模具的置信度数据。 当预处理置信图中的一个或多个值不在为大马士革过程建立的置信限度内时，为镶嵌过程建立扩展的预处理测量配方。 当预处理置信图中的一个或多个值在为大马士革过程建立的置信限度内时，建立了用于第一镶嵌工艺的减少的预处理测量配方。

公开(公告)号：US07113838B2

公开(公告)日：2006-09-26

申请号：US10987194

申请日：2004-11-15

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: G06F11/00 ,  G06F19/00

CPC classification number: H01L21/67276 ,  G05B19/4065 ,  G05B2219/37234 ,  G05B2219/45031 ,  H01L21/67253

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。

公开(公告)号：US20060195218A1

公开(公告)日：2006-08-31

申请号：US11046903

申请日：2005-02-01

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager

IPC: G06F19/00

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract translation: 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

公开(公告)号：US20050171627A1

公开(公告)日：2005-08-04

申请号：US10987194

申请日：2004-11-15

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: H01L21/02 ,  G05B19/4065 ,  G06F19/00 ,  H01L21/00

CPC classification number: H01L21/67276 ,  G05B19/4065 ,  G05B2219/37234 ,  G05B2219/45031 ,  H01L21/67253

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。