公开(公告)号：US20060112537A1

公开(公告)日：2006-06-01

申请号：US11329460

申请日：2006-01-11

申请人： Michio Kadota ,  Takeshi Nakao ,  Masakazu Mimura

发明人： Michio Kadota ,  Takeshi Nakao ,  Masakazu Mimura

IPC分类号： H01L41/08

CPC分类号： H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49156

摘要： A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.

摘要翻译： 通过在IDT上形成SiO 2膜来制造具有高机电系数和反射系数以及具有改善的频率温度特性的表面声波器件的制造方法，以防止开裂 在SiO 2膜的表面上发生，从而可以可靠地获得期望的性能。 表面声波装置包括至少一个IDT，其由密度高于Al的金属或合金构成，并且形成在25°至55°的旋转Y板X传播LiTaO 3上， / SUB>衬底和设置在LiTaO 3衬底上的SiO 2膜以覆盖至少一个IDT以提高频率 - 温度特性。

公开(公告)号：US07034433B2

公开(公告)日：2006-04-25

申请号：US10270207

申请日：2002-10-12

申请人： Michio Kadota ,  Takeshi Nakao ,  Masakazu Mimura

发明人： Michio Kadota ,  Takeshi Nakao ,  Masakazu Mimura

IPC分类号： H01L41/08

CPC分类号： H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49156

摘要： A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.

摘要翻译： 表面声波装置具有高的机电系数和反射系数，并且还具有通过在IDT上形成SiO 2膜而实现的改善的频率温度特性，以防止在 SiO 2膜的表面，使得可以可靠地获得期望的性能。 表面声波装置包括至少一个IDT，其由密度高于Al的金属或合金构成，并且形成在25°至55°的旋转Y板X传播LiTaO 3上， / SUB>衬底和设置在LiTaO 3衬底上的SiO 2膜以覆盖至少一个IDT以提高频率 - 温度特性。

公开(公告)号：US06946930B2

公开(公告)日：2005-09-20

申请号：US10132280

申请日：2002-04-26

申请人： Michio Kadota ,  Takeshi Nakao

发明人： Michio Kadota ,  Takeshi Nakao

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/6436 ,  H03H9/02551 ,  H03H9/02637 ,  H03H9/6463 ,  H03H9/6483

摘要： A reliable SAW device has excellent reflection and a small size, which is achieved by reducing the number of fingers defining reflectors, such that losses due to a large electromechanical coupling coefficient are small and the film thickness of electrodes has much less effect on frequencies of the device. In the SAW device having pluralities of first fingers and second fingers, disposed on a quartz substrate, constituting an IDT for exciting SH waves and reflectors for reflecting the SH waves, respectively, the first and second fingers made mainly from Al are disposed on the ST-cut 90° X-propagation quartz substrate with the Euler angles (0°, θ, 90°±2°), wherein the angle θ is within the range of about 110° to about 150°, and a normalized film thickness (H/λ) of the fingers is within in the range of about 0.025 to about 0.135.

摘要翻译： 可靠的SAW器件具有优异的反射和小尺寸，其通过减少限定反射器的指状物的数量来实现，使得由于大的机电耦合系数导致的损耗小，并且电极的膜厚度对 设备。 在具有多个第一指状物和第二指状物的SAW器件中，分别配置在石英衬底上，构成用于激发SH波的IDT和用于反射SH波的反射器，主要由Al制成的第一和第二指状物设置在ST （0°，θ，90°±2°）切割的90°X传播石英衬底，其中角度θ在约110°至约150°的范围内，标准化膜厚度（H /λ）在约0.025至约0.135的范围内。

公开(公告)号：US20050184622A1

公开(公告)日：2005-08-25

申请号：US11097086

申请日：2005-03-31

申请人： Takeshi Nakao ,  Toshimaro Yoneda ,  Michio Kadota

发明人： Takeshi Nakao ,  Toshimaro Yoneda ,  Michio Kadota

IPC分类号： H03H9/25 ,  H03H3/10 ,  H03H9/05 ,  H03H9/15 ,  H03H9/64 ,  H04B1/40 ,  H03H9/145

CPC分类号： H03H9/6459 ,  H03H9/1071

摘要： A surface acoustic wave device includes a surface acoustic wave element housed in a main body of a package. The surface acoustic wave element is electrically connected to electrode lands of the package via bonding wires, and the bonding wires are arranged so as not to pass over both of IDTs and reflectors of the surface acoustic wave device.

摘要翻译： 表面声波装置包括容纳在封装主体中的表面声波元件。 声表面波元件通过接合线电连接到封装的电极焊盘，并且接合线布置成不通过声表面波器件的IDT和反射器两者。

公开(公告)号：US06603371B2

公开(公告)日：2003-08-05

申请号：US09950419

申请日：2001-09-12

申请人： Takeshi Nakao ,  Michio Kadota

发明人： Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H964

CPC分类号： H03H3/08 ,  H03H9/25 ,  Y10T29/42

摘要： A surface acoustic wave device includes a piezoelectric substrate, and at least one interdigital transducer disposed thereon which is made of a metal or an alloy that is heavier than Al. The acoustic velocity distribution of surface acoustic waves in the extending direction of electrode fingers of the at least one interdigital transducer is not greater than about 276 ppm, thereby effectively suppressing considerable ripples, which are noticeably found in the group delay time characteristic in particular, within the bandpass area.

摘要翻译： 表面声波装置包括压电基片和设置在其上的至少一个叉指换能器，其由比Al重的金属或合金制成。 表面声波在至少一个叉指换能器的电极指的延伸方向上的声速分布不大于约276ppm，从而有效地抑制了在组延迟时间特征中明显发现的相当大的波纹，特别是在 带通区域。

公开(公告)号：US08810104B2

公开(公告)日：2014-08-19

申请号：US12781050

申请日：2010-05-17

申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

公开(公告)号：US08427032B2

公开(公告)日：2013-04-23

申请号：US13347730

申请日：2012-01-11

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02669

摘要： A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.

摘要翻译： 表面声波装置即使在使用较高频率的情况下，也可以防止产量的降低和可靠性的降低，例如脉冲耐受电压，并实现良好的频率特性。 表面声波装置包括设置在压电基板上的IDT电极和设置在IDT电极上的第一绝缘膜和至少一个第二绝缘膜，并且利用SH波的高阶模式，其中声速 在比最外表面处的绝缘膜更靠近IDT电极的第一绝缘膜中的表面声波的声表面波的声波高于位于最外表面的第二绝缘膜中的表面声波的声速。

公开(公告)号：US07821179B2

公开(公告)日：2010-10-26

申请号：US12203393

申请日：2008-09-03

申请人： Takeshi Nakao ,  Yasuharu Nakai ,  Michio Kadota

发明人： Takeshi Nakao ,  Yasuharu Nakai ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02818 ,  H03H9/02992 ,  H03H9/1452

摘要： In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.

摘要翻译： 在声波谐振器中，在压电基板上设置有IDT电极。 IDT电极被变迹加权，使得在声波传播方向上提供多个最大交叉宽度值。 或者，在变迹加权中，施加加权，使得位于IDT电极的外侧部分的大致垂直于声波传播方向的方向上的一对包络中的至少一个包括多个成角度的包络部分，该包络部分从 IDT电极朝向与声波传播方向大致正交的方向朝向IDT电极的外侧部分。

公开(公告)号：US07649303B2

公开(公告)日：2010-01-19

申请号：US12203393

申请日：2008-09-03

申请人： Takeshi Nakao ,  Yasuharu Nakai ,  Michio Kadota

发明人： Takeshi Nakao ,  Yasuharu Nakai ,  Michio Kadota

IPC分类号： H01L41/08

摘要： In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.

公开(公告)号：US07411334B2

公开(公告)日：2008-08-12

申请号：US11674928

申请日：2007-02-14

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。