公开(公告)号：US20150170755A9

公开(公告)日：2015-06-18

申请号：US14162278

申请日：2014-01-23

Applicant: Micron Technology, Inc.

Inventor： Tommaso Vali ,  Giovanni Santin ,  Michele Incarnati ,  Violante Moschiano

IPC: G11C16/34

CPC classification number: G11C16/3427 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/3418 ,  G11C27/02 ,  G11C2211/5642 ,  G11C2211/5646

Abstract: Methods of programming a memory, memory devices, and systems are disclosed, for example. In one such method, each data line of a memory to be programmed is biased differently depending upon whether one or more of the data lines adjacent the data line are inhibited. In one such system, a connection circuit provides data corresponding to the inhibit status of a target data line to page buffers associated with data lines adjacent to the target data line.

Abstract translation: 例如，公开了存储器，存储器件和系统的编程方法。 在一种这样的方法中，根据是否禁止与数据线相邻的一条或多条数据线，要编程的存储器的每条数据线被不同地偏置。 在一个这样的系统中，连接电路将对应于目标数据线的禁止状态的数据提供给与与目标数据线相邻的数据线相关联的寻呼缓冲器。

公开(公告)号：US20150085581A1

公开(公告)日：2015-03-26

申请号：US14554794

申请日：2014-11-26

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Giovanni Santin ,  Michele Incarnati

IPC: G11C16/34 ,  G11C16/10

CPC classification number: G11C16/34 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3459

Abstract: Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying a signal to a line associated with a memory cell, the signal being generated based on digital information. The method can also include, while the signal is applied to the line, determining whether a state of the memory cell is near a target state when the digital information has a first value, and determining whether the state of the memory cell has reached the target state when the digital information has a second value. Other embodiments including additional memory devices and methods are described.

Abstract translation: 一些实施例包括存储器设备和编程存储器设备的存储器单元的方法。 一种这样的方法可以包括将信号施加到与存储器单元相关联的线，该信号是基于数字信息生成的。 该方法还可以包括当信号被施加到线路时，当数字信息具有第一值时，确定存储器单元的状态是否接近目标状态，并且确定存储器单元的状态是否已经达到目标 当数字信息具有第二值时状态。 描述包括附加存储器件和方法的其它实施例。

公开(公告)号：US20150049556A1

公开(公告)日：2015-02-19

申请号：US14528251

申请日：2014-10-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Giovanni Santin ,  Michele Incarnati

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C11/5628 ,  G11C16/26

Abstract: Methods for program verifying a memory cell include generating an access line voltage in response to a count and applying the access line voltage to a control gate of the memory cell, and generating a pass signal in response to the access line voltage activating the memory cell. Methods further include comparing at least a portion of the count to an indication of a desired threshold voltage of the memory cell, and when the at least a portion of the count matches the indication of the desired threshold voltage of the memory cell, determining if the pass signal is present. Methods further include generating a signal indicative of a desire to inhibit further programming of the memory cell if the pass signal is present when the match is indicated.

Abstract translation: 用于程序验证存储器单元的方法包括响应于计数产生访问线电压并将存取线电压施加到存储器单元的控制栅极，并且响应于启动存储器单元的存取线电压而产生通过信号。 方法还包括将计数的至少一部分与存储器单元的期望阈值电压的指示进行比较，并且当计数的至少一部分与存储器单元的期望阈值电压的指示匹配时，确定是否 存在通过信号。 如果在指示匹配时存在通过信号，那么方法还包括产生指示禁止进一步编程存储器单元的信号的信号。