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公开(公告)号：US20220216845A1
公开(公告)日：2022-07-07
申请号：US17701985
申请日：2022-03-23
发明人： Takashi YAMANE , Sho NAGATOMO , Tetsuya KIMURA
摘要： An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.
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公开(公告)号：US20220216843A1
公开(公告)日：2022-07-07
申请号：US17705307
申请日：2022-03-26
发明人： Sho NAGATOMO , Tetsuya KIMURA , Takashi YAMANE
摘要： An acoustic wave device includes a piezoelectric layer made of lithium niobate or lithium tantalate, and first and second electrodes opposed to each other in a direction that intersects with a thickness direction of the piezoelectric layer. The first and second electrodes are adjacent electrodes, and, when a thickness of the piezoelectric layer is d and a distance between centers of the first and second electrodes is p, d/p is less than or equal to about 0.5.
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公开(公告)号：US20220216842A1
公开(公告)日：2022-07-07
申请号：US17704859
申请日：2022-03-25
发明人： Sho NAGATOMO , Tetsuya KIMURA , Takashi YAMANE , Katsuya DAIMON , Takuya KOYANAGI , Yuji TOYOTA
摘要： An acoustic wave device includes a piezoelectric layer, at least one pair of electrodes adjacent to each other, and an additional film. The piezoelectric layer is made of lithium niobate or lithium tantalate, and includes first and second opposing principal surfaces. The at least one pair of electrodes is located on the first principal surface of the piezoelectric layer. The additional film is located on the piezoelectric layer or either one or both of the electrodes so as to overlap, in plan view, either one or both of areas in which the electrodes are located and an area between the electrodes. When d represents a thickness of the piezoelectric layer and p represents a center-to-center distance between the electrodes, d/p is equal to or less than about 0.5.
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公开(公告)号：US20210147217A1
公开(公告)日：2021-05-20
申请号：US17161724
申请日：2021-01-29
摘要： A MEMS device includes a membrane portion, a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite to the first direction, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in the membrane portion. Each of the first electrode and the second electrode has a tapered cross-sectional shape with a width which decreases with increasing distance from the piezoelectric layer on a cross section along a plane vertical to the surface in the first direction.
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35.发明申请公开(公告)号：US20190386638A1
公开(公告)日：2019-12-19
申请号：US16551793
申请日：2019-08-27
发明人： Tetsuya KIMURA , Ville KAAJAKARI
摘要： An acoustic wave device includes first and second electrode fingers provided on a first principal surface of a piezoelectric body. In a case that a portion where the first electrode finger and the second electrode finger overlap with each other when they are viewed from a first direction connecting the first and second end surfaces is an intersecting portion, and a distance between the first end surface and the second end surface in the piezoelectric body is a width of the piezoelectric body, a different width portion having a width different from the width of the piezoelectric body at a central portion of the intersecting portion in a second direction is provided in a region where the first end surface and the second end surface oppose each other.
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公开(公告)号：US20190312564A1
公开(公告)日：2019-10-10
申请号：US16449496
申请日：2019-06-24
发明人： Tetsuya KIMURA
摘要： A multiplexer includes a common terminal, a first band pass filter that is connected to the common terminal and has a first pass band, and a second band pass filter that is connected to the common terminal and has a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an acoustic wave device that includes a support substrate, a piezoelectric body stacked on the support substrate, and an IDT electrode provided on the piezoelectric body. The piezoelectric body is made of lithium niobate. The acoustic wave device utilizes Rayleigh waves.
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公开(公告)号：US20190097602A1
公开(公告)日：2019-03-28
申请号：US16125801
申请日：2018-09-10
发明人： Tetsuya KIMURA
摘要： In an elastic wave device that utilizes longitudinal wave leaky elastic wave, an IDT electrode is provided on a first or second principal surface of a piezoelectric layer, an energy confinement layer that is laminated on the second principal surface of the piezoelectric layer so as to support the piezoelectric layer and confines energy of the longitudinal wave leaky elastic wave into the piezoelectric layer is provided, a thickness of the piezoelectric layer is λ or less when λ represents a wavelength determined according to an electrode finger pitch of the IDT electrode, and a groove is provided in at least one of the first and second principal surfaces of the piezoelectric layer, and the IDT electrode includes a portion in the groove.
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公开(公告)号：US20190068155A1
公开(公告)日：2019-02-28
申请号：US16167614
申请日：2018-10-23
发明人： Tetsuya KIMURA , Yutaka KISHIMOTO , Masashi OMURA
摘要： An elastic wave device includes a supporting substrate including an upper surface including a recessed portion, a piezoelectric thin film on the supporting substrate to cover the recessed portion of the supporting substrate, an IDT electrode on a main surface of the piezoelectric thin film, the main surface being adjacent to the supporting substrate, and an intermediate layer on a main surface of the piezoelectric thin film, the main surface being remote from the supporting substrate. A space is defined by the supporting substrate and the piezoelectric thin film. The IDT electrode faces the space. Through holes are provided in the piezoelectric thin film and the intermediate layer to extend from a main surface of the intermediate layer to the space, the main surface being remote from the piezoelectric thin film. The elastic wave device further includes a cover member on the intermediate layer and covering opening ends of the through holes.
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公开(公告)号：US20170373663A1
公开(公告)日：2017-12-28
申请号：US15604737
申请日：2017-05-25
发明人： Yutaka KISHIMOTO , Masashi OMURA , Tetsuya KIMURA
摘要： An acoustic wave device includes a support substrate, a piezoelectric laminate, and first and second interdigital transducer electrodes. The piezoelectric laminate includes an intermediate layer provided directly or indirectly on the support substrate and a piezoelectric thin film provided on the intermediate layer. The first and second interdigital transducer electrodes are provided on the piezoelectric thin film of the piezoelectric laminate so as to be disposed in an identical or substantially identical plane. In the piezoelectric laminate, a thickness of a portion where the first interdigital transducer electrode is provided is different from a thickness of a portion where the second interdigital transducer electrode is provided.
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公开(公告)号：US20160352305A1
公开(公告)日：2016-12-01
申请号：US15236594
申请日：2016-08-15
发明人： Tetsuya KIMURA
摘要： An elastic wave device includes an IDT electrode provided on a main surface of a LiTaO3 substrate, and uses plate waves in an SH0 mode, which is a basic mode of SH waves. A wavelength-normalized thickness of the LiTaO3 substrate normalized by a wavelength determined by a pitch of electrode fingers of the IDT electrode, and an Al equivalent wavelength-normalized thickness of the IDT electrode satisfy any one of combinations listed in the following table: (a)The wavelength-normalized thickness is about 0.01 or more and about 0.30 or less, and the wavelength- normalized thickness of Al is about 0.04 or more and about 0.1 or less. (b)The wavelength-normalized thickness is about 0.01 or more and about 0.70 or less, and the wavelength- normalized thickness of Al is about 0.04 or more and about 0.08 or less.
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