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公开(公告)号：US20240048118A1
公开(公告)日：2024-02-08
申请号：US18381673
申请日：2023-10-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO
CPC classification number: H03H9/02228 , H03H9/02559 , H03H9/02574 , H03H9/14541
Abstract: An acoustic wave device includes a piezoelectric film on an energy confinement layer, an IDT electrode and a first dielectric film on a first main surface of the piezoelectric film, a second IDT electrode and a second dielectric film on the second main surface. When a product of a density and a film thickness of the second dielectric film on a side of the second main surface is larger than that of the first dielectric film on the first main surface side, a total sum of a product of a density and a film thickness of an electrode finger of the first IDT electrode covered with the first dielectric film is smaller than a total sum of a product of a density and a film thickness of an electrode finger of the second IDT electrode.
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公开(公告)号：US20240007081A1
公开(公告)日：2024-01-04
申请号：US18229701
申请日：2023-08-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki IWAMOTO , Sho NAGATOMO
CPC classification number: H03H9/14544 , H03H9/25 , H03H9/02818 , H03H9/02559 , H03H9/02992
Abstract: To provide an acoustic wave device capable of reducing or preventing fluctuations in electrical characteristics and reducing or preventing higher-order modes. An acoustic wave device of the present invention includes a support including a support substrate, a piezoelectric layer provided on the support and having a first principal surface and a second principal surface facing each other, a first IDT electrode provided on the first principal surface and including a plurality of electrode fingers, and a second IDT electrode provided on the second principal surface and including a plurality of electrode fingers. The second IDT electrode is embedded in the support. A dielectric film is provided on the first principal surface of the piezoelectric layer to cover the first IDT electrode. When a wavelength defined by an electrode finger pitch of the first IDT electrode is represented by λ, a thickness of the dielectric film is equal to or less than 0.15λ.
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公开(公告)号：US20250015784A1
公开(公告)日：2025-01-09
申请号：US18894286
申请日：2024-09-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO
Abstract: An acoustic wave device includes first and second acoustic wave resonators, each including a piezoelectric layer and a functional electrode, and an acoustic coupling layer laminated between the piezoelectric layer of each of the first and second acoustic wave resonators. Each of the functional electrodes of the first and second acoustic wave resonators includes at least one pair of electrode fingers. In each of the first and second acoustic wave resonators, when a thickness of the piezoelectric layer is defined as d and a center-to-center distance of the electrode fingers adjacent to each other is defined as p, d/p is about 0.5 or smaller. The first and second acoustic wave resonators face each other across the acoustic coupling layer.
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公开(公告)号：US20240097649A1
公开(公告)日：2024-03-21
申请号：US18510873
申请日：2023-11-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO , Bryant GARCIA , Ventsislav YANTCHEV , Patrick TURNER , Robert B. HAMMOND , Douglas JACHOWSKI
CPC classification number: H03H9/205 , H03H9/02015 , H03H9/02157
Abstract: An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts1/tp1≤ts2/tp2 is satisfied, where tp1, tp2, ts1, and ts2 are respectively thicknesses of the first and second resonator portions and the first and second dielectric films.
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公开(公告)号：US20230223909A1
公开(公告)日：2023-07-13
申请号：US18121634
申请日：2023-03-15
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazunori INOUE , Sho NAGATOMO
CPC classification number: H03H3/04 , H03H3/08 , H03H2003/0428
Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and first and second electrodes. The piezoelectric layer overlaps the support substrate in a first direction. The first and second electrodes extend over at least a first major surface of the piezoelectric layer. The first and second electrodes face each other and are at different potentials. A space between a second major surface of the piezoelectric layer and the support substrate is covered by the piezoelectric layer. The first and second electrodes each include an overlap portion overlapping the space in the first direction and a non-overlap portion not overlapping the space in the first direction. At least part of the support substrate includes an attenuation layer and overlaps a region between the non-overlap portions of the first and second electrodes in plan view. The attenuation layer and the support substrate have different crystallinities.
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Patent Agency Ranking
公开(公告)号：US20220224305A1
公开(公告)日：2022-07-14
申请号：US17701975
申请日：2022-03-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tetsuya KIMURA , Takashi YAMANE , Sho NAGATOMO , Hideki IWAMOTO
Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.
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公开(公告)号：US20250070750A1
公开(公告)日：2025-02-27
申请号：US18943048
申请日：2024-11-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO , Junji YAMAUCHI
Abstract: An acoustic wave device includes a support including a space in a surface thereof, a piezoelectric layer on the surface of the support, and a functional electrode on at least one surface of the piezoelectric layer to at least partially overlap the space as viewed in a first direction. The functional electrode is an interdigital transducer electrode including first and second busbars, and first and second electrode fingers. At least one electrode finger of the first and second electrode fingers includes a portion with a width that linearly changes in a second direction. In the at least one electrode finger, when a ratio of a width at a proximal end to a minimum width between the proximal end and a distal end is 1+σ:1−σ, σ is greater than or equal to about 0.01 and less than or equal to about 0.054.
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公开(公告)号：US20240313741A1
公开(公告)日：2024-09-19
申请号：US18667447
申请日：2024-05-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO
CPC classification number: H03H9/178 , H03H9/02031 , H03H9/02157 , H03H9/02228 , H03H9/0523 , H03H9/105 , H03H9/173
Abstract: An acoustic wave device includes first and second piezoelectric layers and an IDT electrode. The second piezoelectric layer is located above the first piezoelectric layer in a first direction. The IDT electrode includes first and second busbar electrodes and first and second electrode fingers. The first and second busbar electrodes oppose each other. The first electrode finger is provided to the first busbar electrode and extends toward the second busbar electrode. The second electrode finger is provided to the second busbar electrode and extends toward the first busbar electrode. The first and second electrode fingers are sandwiched between the first and second piezoelectric layers in the first direction. The first and second electrode fingers extend in a second direction which intersects with the first direction and are located to overlap each other as seen in a third direction perpendicular or substantially perpendicular to the second direction.
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公开(公告)号：US20240113682A1
公开(公告)日：2024-04-04
申请号：US18537872
申请日：2023-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO
CPC classification number: H03H9/14552 , H03H9/25
Abstract: An acoustic wave device includes a piezoelectric material layer, and an IDT electrode on the piezoelectric material layer and including first electrode fingers and second electrode fingers arranged periodically. The electrode fingers each include at least one electrode layer including at least one of Nb, Pd, or Ni. A sum of thicknesses of the at least one electrode layer, calculated assuming that the electrode layer(s) includes Mo and based on a density ratio between the electrode layer(s) and Mo, is at least about 10% of a spatial period of the electrode fingers.
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公开(公告)号：US20240039514A1
公开(公告)日：2024-02-01
申请号：US18379895
申请日：2023-10-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Sho NAGATOMO
CPC classification number: H03H9/205 , H03H9/568 , H03H9/02015
Abstract: An acoustic wave device includes a first resonator, a first functional electrode provided on one of first and second main surfaces and a first dielectric film on the one of the first and second main surfaces, a second resonator sharing the piezoelectric layer with the first resonator and including a second functional electrode on one of the first and second main surfaces, a second dielectric film on the first main surface and a third dielectric film on the second main surface. The piezoelectric layer includes first and second resonator portions in which the first and second resonator are respectively provided. When thicknesses of the first resonator portion, the second resonator portion, the first dielectric film, the second dielectric film, and the third dielectric film are represented by tp1, tp2, ts1, ts2, and ts3, respectively, ts1/tp1
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