-
公开(公告)号:US20240056050A1
公开(公告)日:2024-02-15
申请号:US18383925
申请日:2023-10-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tetsuya KIMURA , Yutaka KISHIMOTO , Takeshi NAKAO
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/605
Abstract: An acoustic wave device includes a piezoelectric board including a piezoelectric layer with a first principal surface and a second principal surface opposed to each other, an intermediate layer on the first principal surface or the second principal surface of the piezoelectric layer, and a functional electrode on the intermediate layer. A material of the intermediate layer is a same type as a material of the piezoelectric layer, and an electromechanical coupling coefficient of the intermediate layer is smaller than an electromechanical coupling coefficient of the piezoelectric layer.
-
公开(公告)号:US20210152149A1
公开(公告)日:2021-05-20
申请号:US17161727
申请日:2021-01-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yutaka KISHIMOTO , Shinsuke IKEUCHI , Katsumi FUJIMOTO , Tetsuya KIMURA , Fumiya KUROKAWA
Abstract: A piezoelectric device includes a membrane portion and a piezoelectric layer made of single crystal of a piezoelectric body. At least a portion of the piezoelectric layer is included in the membrane portion. An electrode is provided on a surface of the piezoelectric layer in the membrane portion. The piezoelectric layer includes a first polarization region in a first polarization state and a second polarization region in a second polarization state, and the first polarization region and the second polarization region are spaced apart from each other in a thickness direction or an in-plane direction.
-
公开(公告)号:US20200321938A1
公开(公告)日:2020-10-08
申请号:US16906090
申请日:2020-06-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Makoto SAWAMURA , Seiji KAI , Yutaka KISHIMOTO , Yuzo KISHI
Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.
-
公开(公告)号:US20180301616A1
公开(公告)日:2018-10-18
申请号:US15942594
申请日:2018-04-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tetsuya KIMURA , Yutaka KISHIMOTO
IPC: H01L41/047 , H01L41/053 , H01L41/18 , H03H9/145 , H03H9/64
Abstract: An elastic wave device that utilizes a longitudinal wave leaky elastic wave includes a first medium layer, a second medium layer stacked on the first medium layer either directly or indirectly and that is a silicon oxide layer, a piezoelectric film stacked on the second medium layer either directly or indirectly, and an IDT electrode disposed on the piezoelectric film either directly or indirectly. In the elastic wave device, ρ1×C11, which is a product of a density ρ1 (kg/m3) of the first medium layer and an elastic constant C11 of the first medium layer, is larger than ρ0×C11, which is a product of a density ρ0 (kg/m3) of the piezoelectric film and an elastic constant C11 of the piezoelectric film.
-
公开(公告)号:US20170366160A1
公开(公告)日:2017-12-21
申请号:US15679327
申请日:2017-08-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yutaka KISHIMOTO , Masashi OMURA
IPC: H03H9/02 , H03H3/10 , H01L41/29 , H01L41/047
CPC classification number: H03H9/02842 , H01L41/047 , H01L41/29 , H03H3/02 , H03H3/10 , H03H9/0211 , H03H9/02228 , H03H9/175 , H03H2003/025
Abstract: An elastic wave device in which an IDT electrode defines an excitation electrode on a piezoelectric layer, an acoustic reflection layer is laminated on a first main surface of the piezoelectric layer, the acoustic reflection layer includes high acoustic impedance layers with a relatively high acoustic impedance and low acoustic impedance layers with a relatively low acoustic impedance, and the acoustic reflection layer has an unwanted wave reflection suppression structure in which reflection of unwanted waves toward the piezoelectric layer side is significantly reduced or prevented.
-
公开(公告)号:US20170194933A1
公开(公告)日:2017-07-06
申请号:US15465630
申请日:2017-03-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yutaka KISHIMOTO , Yasuyuki IDA , Hideaki KOBAYASHI
IPC: H03H9/17
CPC classification number: H03H9/173 , H03H3/02 , H03H9/02228 , H03H9/0547 , H03H9/175
Abstract: A piezoelectric module includes a piezoelectric thin film, a fixing layer, and a support substrate. The piezoelectric thin film is supported by the support substrate with the fixing layer in between. Functional conductors are provided on a surface of the piezoelectric thin film. A void is provided in the fixing layer to include a region overlapping with the functional conductors. A conductor pattern defining a circuit element is provided in a region of the void on a surface of the support substrate on the fixing layer side.
-
公开(公告)号:US20230361754A1
公开(公告)日:2023-11-09
申请号:US18341775
申请日:2023-06-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yutaka KISHIMOTO , Masashi OMURA , Shintaro KUBO , Hajime YAMADA
CPC classification number: H03H9/173 , H03H9/568 , H03H3/02 , H03H9/02157 , H03H9/132 , H03H2003/021
Abstract: An acoustic wave device that includes a piezoelectric substrate that has a piezoelectric layer and a hollow portion, and first and second electrodes and. The piezoelectric layer has a first region that overlaps the first and second electrodes and the hollow portion in plan view, a second region that does not overlap the hollow portion and surrounds the first region in plan view, and a third region that overlaps the hollow portion and is located between the first region and the second region in plan view. A portion including the border between the first region and the third region of a cross-sectional shape in a lamination direction of the piezoelectric substrate includes a curved-surface shape.
-
公开(公告)号:US20220271728A1
公开(公告)日:2022-08-25
申请号:US17685437
申请日:2022-03-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yutaka KISHIMOTO , Shinsuke IKEUCHI , Masayuki SUZUKI , Fumiya KUROKAWA
Abstract: A piezoelectric element includes a second electrode layer on a second surface of a single-crystal piezoelectric layer. A hole continuous with a through-hole is provided in the second electrode layer. The second electrode layer is made of Pt, Ti, Al, Cu, Au, Ag, Mg, or an alloy including at least one of the metals as a main ingredient. A third electrode layer is on one side of the second electrode layer opposite to the single-crystal piezoelectric layer. The third electrode layer includes at least a portion outside of an edge of the hole with a distance maintained relative to the edge of the hole when viewed in a direction perpendicular or substantially perpendicular to the second surface. The third electrode layer is made of Ni or an alloy including Ni as a main ingredient.
-
公开(公告)号:US20220199891A1
公开(公告)日:2022-06-23
申请号:US17691488
申请日:2022-03-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masayuki SUZUKI , Shinsuke IKEUCHI , Fumiya KUROKAWA , Yutaka KISHIMOTO , Hajime YAMADA , Masato KOBAYASHI
IPC: H01L41/047 , H01L41/187 , H01L41/332 , H01L41/313 , H01L41/293 , H01L41/297
Abstract: A piezoelectric element includes a piezoelectric layer, a first electrode layer, a second electrode layer, and a coupling electrode. At least a portion of the second electrode layer faces the first electrode layer with the piezoelectric layer interposed therebetween. The second electrode layer includes a coupling area. The coupling area meets a through hole in a region of the second electrode layer not facing the first electrode layer. The coupling electrode is on the coupling area. Between the coupling area and the surface of the second electrode layer on the piezoelectric layer side excluding the coupling area, the difference in position is about 5 nm or less.
-
公开(公告)号:US20210343929A1
公开(公告)日:2021-11-04
申请号:US17368907
申请日:2021-07-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yutaka KISHIMOTO , Shinsuke IKEUCHI
IPC: H01L41/09 , H01L41/047 , H01L41/187 , H01L41/312 , H01L41/332
Abstract: In a piezoelectric device, a piezoelectric driving portion includes layers and is directly or indirectly supported by a base portion. The piezoelectric driving portion includes a piezoelectric layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer is disposed on the upper side of the piezoelectric layer. The lower electrode layer faces at least a portion of the upper electrode layer with the piezoelectric layer interposed therebetween. The piezoelectric driving portion includes a through groove extending through the piezoelectric driving portion in the vertical direction, so that a pair of inner side surfaces are provided. The pair of inner side surfaces each include a first small-width portion in which the width of the through groove decreases in a downward direction from an upper end surface of the piezoelectric layer.
-
-
-
-
-
-
-
-
-