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    FILTER ELEMENT AND FILTER DEVICE
    1.
    发明公开
    FILTER ELEMENT AND FILTER DEVICE 审中-公开

    公开(公告)号：US20240195387A1

    公开(公告)日：2024-06-13

    申请号：US18584667

    申请日：2024-02-22

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Masashi OMURA

    IPC: H03H9/56 ,  H03H9/17 ,  H03H9/25 ,  H03H9/64

    CPC classification number: H03H9/568 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/25 ,  H03H9/562 ,  H03H9/564 ,  H03H9/6483

    Abstract: A filter element includes a piezoelectric layer with a polarization axis direction, and division resonators provided at the piezoelectric layer. Each of the division resonators includes a functional electrode on the piezoelectric layer. Each of the functional electrodes includes high and low potential electrodes. When a direction parallel or substantially parallel to a direction in which the high and low potential electrodes face each other and oriented from the high-potential electrode toward the low-potential electrode is an inter-electrode direction, and a number of division resonators having the forward direction relationship is equal to a number of division resonators having the opposite direction relationship.

    ACOUSTIC WAVE DEVICE
    2.
    发明公开
    ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20230261631A1

    公开(公告)日：2023-08-17

    申请号：US18301999

    申请日：2023-04-18

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Masashi OMURA

    IPC: H03H9/02 ,  H03H9/17 ,  H03H9/56

    CPC classification number: H03H9/02133 ,  H03H9/02031 ,  H03H9/02102 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568

    Abstract: An acoustic wave device includes a support substrate, and a piezoelectric layer provided on the support substrate. The piezoelectric layer has a first main surface opposite to a second main surface. The piezoelectric layer also includes a first direction orthogonal to a second direction. A first electrode is provided on the piezoelectric layer's first main surface, and a second electrode is provided on the piezoelectric layer's second main surface to face the first electrode. An energy confining portion is provided between the support substrate and the piezoelectric layer. The piezoelectric layer is anisotropic with respect to a coefficient of linear expansion, and in the piezoelectric layer, a coefficient of linear expansion in the first direction is different from a coefficient of linear expansion in the second direction. At least one of the piezoelectric layer, the first electrode, and the second electrode is parallel to the first direction.

    ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE
    3.
    发明申请
    ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20200220521A1

    公开(公告)日：2020-07-09

    申请号：US16822066

    申请日：2020-03-18

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Masashi OMURA

    IPC: H03H9/54 ,  H03H3/02 ,  H03H9/02 ,  H03H9/56

    Abstract: An acoustic wave device includes a first acoustic impedance layer and a second acoustic impedance layer, an IDT electrode, and an electrode. At least a portion of the IDT electrode overlaps the first acoustic impedance layer. At least a portion of the electrode overlaps the second acoustic impedance layer. In each of the first acoustic impedance layer and the second acoustic impedance layer, at least one of a high acoustic impedance layer and a low acoustic impedance layer is a conductive layer. A capacitor is formed by using the conductive layer of the second acoustic impedance layer and the electrode. The conductive layer in the first acoustic impedance layer is electrically insulated from the conductive layer in the second acoustic impedance layer.

    ACOUSTIC WAVE DEVICE
    7.
    发明公开
    ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20230275568A1

    公开(公告)日：2023-08-31

    申请号：US18295856

    申请日：2023-04-05

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Masashi OMURA

    IPC: H03H9/205 ,  H03H9/13 ,  H03H9/02 ,  H03H9/56

    CPC classification number: H03H9/205 ,  H03H9/132 ,  H03H9/02015 ,  H03H9/568

    Abstract: An acoustic wave device includes a substrate, first and second resonators above the substrate, and an energy confinement portion. The first resonator includes a first piezoelectric film including a first main surface facing a second main surface, both having anisotropy. First and second electrodes are provided on the first or second main surface. The second resonator includes a second piezoelectric film including a third main surface facing a fourth main surface, both having anisotropy. Third and fourth electrodes are provided on the third or fourth main surface. In the first resonator, a first excitation portion is where the first and second electrodes overlap or where the first electrode faces the second electrode. In the second resonator, a second excitation portion is where the third and fourth electrodes overlap or where the third electrode faces the fourth electrode. The first and second excitation portions have shapes including length directions that differ.

    ACOUSTIC WAVE DEVICE
    8.
    发明申请
    ACOUSTIC WAVE DEVICE 有权

    公开(公告)号：US20210297060A1

    公开(公告)日：2021-09-23

    申请号：US17338762

    申请日：2021-06-04

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Masashi OMURA ,  Tetsuya KIMURA

    IPC: H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/02

    Abstract: An acoustic wave device includes a supporting substrate, an acoustic reflection layer, a piezoelectric layer, and an IDT electrode. At least one of a high acoustic impedance layer and a low acoustic impedance layer is a conductive layer in the acoustic reflection layer. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is λ and a region between an envelope of tips of first electrode fingers and an envelope of tips of second electrode fingers is an intersecting region, the conductive layer overlaps at least the intersecting region in plan view in a thickness direction of the supporting substrate, and a distance from the tips of the first electrode fingers to an end of the conductive layer in a direction in which the first electrode fingers extend is more than 0 and not more than about 12λ.

    ACOUSTIC WAVE FILTER DEVICE
    9.
    发明申请
    ACOUSTIC WAVE FILTER DEVICE 审中-公开

    公开(公告)号：US20200212889A1

    公开(公告)日：2020-07-02

    申请号：US16817680

    申请日：2020-03-13

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Masashi OMURA

    IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25

    Abstract: An acoustic wave filter device includes a substrate, first and second acoustic impedance layers, a piezoelectric layer, first and second interdigital transducer electrodes, an input terminal, an output terminal, ground terminals, a series arm circuit, and a parallel arm circuits. The first interdigital transducer electrode at least partially overlaps the first acoustic impedance layer in the plan view. The second interdigital transducer electrode at least partially overlaps the second acoustic impedance layer in the plan view. The series arm circuit is provided on a first path connecting the input terminal and the output terminal and includes the first and second interdigital transducer electrodes. A conductive layer in the first acoustic impedance layer and a conductive layer in the second acoustic impedance layer are electrically insulated from each other.

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