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公开(公告)号：US07399577B2
公开(公告)日：2008-07-15
申请号：US10543429
申请日：2004-02-09
IPC分类号： G03C5/00 , C07C255/50 , C07C251/32
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2- C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Arl is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1—Y1-A1—Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for example a direct bond, —0—, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example —0—, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译： 式（I）或（II）的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 卤代烷酰基，卤代苯甲酰基， R 2是卤素或C 1 -C 10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1是例如亚苯基，亚萘基，二亚苯基，亚杂芳基，氧联二苯基，亚苯基D-D 1-D-亚苯基或-Ar' -A 1 -Y 1-A 1 -Ar'1 - ; - - - - 其中这些基团任选被取代; Ae'是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部任意取代; A是例如直接键，-O - ， - S-或-NR 6 - 。 Y尤其是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - 。 D，尤其是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。
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公开(公告)号：US07326511B2
公开(公告)日：2008-02-05
申请号：US10495710
申请日：2003-01-28
CPC分类号： G03F7/0037 , B33Y70/00 , C07C323/66 , C07C381/00 , G03F7/001 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0758 , Y10S430/114
摘要： Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula (Ia), (Ib), (IIa), (IIb), (IIIa), (IIIb), (Iva), (Ivb), (Va), (Vb) or (VIa), wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH═CH2; h is 2, 3, 4, 5 or 6; R1 when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X′ is -X1-A3-X2-; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g. are C1-C18alkyl; R10 has one of the meanings given for R7; R11 i.a. is C1-C18alkyl; R12, R13, R14, R15 R16, R17 and R18 for example are hydrogen or C1-C18alkyl; R20, R21, R22 and R23 i.a are phenyl or C1-C18alkyl; give high resolution with good resist profile
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公开(公告)号：US20060246377A1
公开(公告)日：2006-11-02
申请号：US10543429
申请日：2004-02-09
IPC分类号： G03C5/00 , C07C255/50 , C07C251/32
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1-Y1-A1-Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for exampfe a direct bond, -0-, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example -0-, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译： 式（I）或（II）的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 卤代烷酰基，卤代苯甲酰基， R 2是卤素或C 1 -C 10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1是例如亚苯基，亚萘基，二亚苯基，亚杂芳基，氧联二苯基，亚苯基D-D 1-D-亚苯基或-Ar' -A 1 -Y 1-A 1 -Ar'1 - ; - - - - 其中这些基团任选被取代; Ae'是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部任意取代; A，是直接键合的，-O - ， - S-或-NR 6 - 。 Y尤其是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - 。 D，尤其是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。
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公开(公告)号：US07026094B2
公开(公告)日：2006-04-11
申请号：US10478963
申请日：2002-05-23
申请人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Masaki Ohwa , Peter Murer
发明人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Masaki Ohwa , Peter Murer
CPC分类号： G03F7/0045 , B33Y70/00 , C07C309/00 , C07D333/36 , G03F7/0007 , G03F7/001 , G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/117 , Y10S430/12 , Y10S430/122
摘要： New oxime sulfonate compounds of the formula (I) and (II), wherein R1 is C1-C12alkyl, C1C4haloalkyl, hydrogon, OR9, NR10R11, SR12 or is phenyl which is unsubstituted or substituted by OH, C1-C18alkyl, halogen and/or C1-C12alkoxy; R2, R3, R4 and R5 are for example hydrogen or C1-C12alkyl; R6 is for example is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl or phenylsulfonyl; R′6 is for example phenylenedisulfonyl or diphenylenedisulfonyl; R7, R8 and R9 for example are hydrogen or C1-C6alkyl; R10 and R11, are for example hydrogen or C1-C18alkyl; R12 is for example hydrogen, phenyl or C1-C18alkyl; A is S, O, NR13, or a group of formula A1, A2 or A3, R21 and R22 independently of one other have one of the meanings given for R7; R23, R24, R25 and R26 independently of one another are for example hydrogen, C1-C4alkyl, halogen or phenyl; Z is CR22 or N; and Z1 is CR22 or N; and Z1 is CR22 or N; and Z1 is CH2, S, O or NR13 are particularly suitable as photo-latent acids in resist applications.
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公开(公告)号：US06512020B1
公开(公告)日：2003-01-28
申请号：US09820115
申请日：2001-03-28
申请人： Toshikage Asakura , Hitoshi Yamato , Masaki Ohwa , Jean-Luc Birbaum , Kurt Dietliker , Junichi Tanabe
发明人： Toshikage Asakura , Hitoshi Yamato , Masaki Ohwa , Jean-Luc Birbaum , Kurt Dietliker , Junichi Tanabe
IPC分类号： C08J328
CPC分类号： G03F7/0045 , B33Y70/00 , C07C251/62 , C07C309/00 , C07C309/65 , C07C317/32 , C07C323/47 , C07C381/00 , C07C2602/42 , C07D319/18 , C07D333/22
摘要： Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as photosensitive acid-donors in chemically amplified resist formulations.
摘要翻译： 式I，II和III的化合物，其中R1是例如氢，C1-C12烷基，C3-C30环烷基，C2-C12链烯基，C4-C8环烯基，苯基，未取代或取代的萘基，蒽基或菲基，未取代或取代的， 未取代或取代的杂芳基; 其中除氢之外的所有基团R1可以另外被具有在酸作用下切割的-O-C键或-O-Si键的基团取代; R'1是例如亚苯基，亚萘基，亚二苯基或氧联二苯基，其中这些基团是未取代的或被取代的; R2是卤素或C1-C10卤代烷基; R3是例如C1-C18烷基磺酰基，苯基磺酰基，萘基磺酰基，蒽磺酰基或菲基磺酰基，其中基团是未取代的或被取代的，或者R3是例如。 C 2 -C 6卤代烷酰基或卤代苯甲酰基，R'3是例如亚苯基二磺酰基，萘基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，其中这些基团是未取代的或被取代的，X是卤素; 在化学放大抗蚀剂配方中特别适合用作光敏酸供体。
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公开(公告)号：US06485886B1
公开(公告)日：2002-11-26
申请号：US09830248
申请日：2001-04-24
IPC分类号： G03C173
CPC分类号： C07C255/64 , B33Y70/00 , C07D333/36 , Y10S430/114 , Y10S430/117 , Y10S430/12
摘要： New oxime derivatives of formula (I) or. (II), wherein m is 0 or 1; R1 inter alia is phenyl, naphthyl, anthracyl, phenanthryl or a heteroaryl radical; R′1 is for example C2-C12alkylene, phenylene, naphthylene; R2 is CN; R3 is C2-C6haloalkanoyl, halobenzoyl, a phosphoryl or an organosilyl group; R4, R5, R10 and R11 inter alia are hydrogen, C1-C6alkyl, C1-C6alkoxy; R6 inter alia is hydrogen phenyl, C1-C12alkyl; R7 and R8 inter alia are hydrogen, C1-C12alkyl; or R7 and R8, together with the nitrogen atom to which they are bonded, form a 5-, 6 or 7-membered ring; R9 is for example C1-C12alkyl; and A inter alia is S, O, NR7a; are useful as latent acids, especially in photoresist applications.
摘要翻译： 式（I）的新肟衍生物或。 （II），其中m为0或1; R1特别是苯基，萘基，蒽基，菲基或杂芳基; R'1例如为C 2 -C 12亚烷基，亚苯基，亚萘基; R2为CN; R3是C2-C6卤代烷酰基，卤代苯甲酰基，磷酰基或有机甲硅烷基; R4，R5，R10和R11尤其是氢，C1-C6烷基，C1-C6烷氧基; R6尤其是氢苯基，C1-C12烷基; R 7和R 8尤其是氢，C 1 -C 12烷基; 或R 7和R 8与它们所键合的氮原子一起形成5-，6-或7-元环; R 9为例如C 1 -C 12烷基; A特别是S，O，NR7a; 可用作潜酸，特别是在光致抗蚀剂中。
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