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公开(公告)号：US20110156002A1
公开(公告)日：2011-06-30
申请号：US13060850
申请日：2009-07-28
IPC分类号： H01L33/06
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译： 公开了发光系统。 发光系统包括从电致发光器件的顶表面发射第一波长的光的电致发光器件。 发光系统还包括靠近电致发光器件的侧面的结构，用于阻挡否则将离开侧面的第一波长的光。 发光系统还包括包括II-VI势阱的再发射半导体结构。 再发射半导体结构接收离开电致发光器件的第一波长光，并将接收的光的至少一部分转换成第二波长的光。 离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。
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公开(公告)号：US20110150019A1
公开(公告)日：2011-06-23
申请号：US13060643
申请日：2009-07-28
CPC分类号： H01S5/041 , H01S5/02476 , H01S5/183 , H01S5/423
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译： 公开了发光系统。 发光系统包括发射第一波长的光的电致发光器件。 发光系统还包括光腔，其增强来自发光系统的顶表面的光的发射并抑制来自发光系统的一个或多个侧面的光的发射。 光腔包括半导体多层堆叠，其接收所发射的第一波长光，并将接收到的光的至少一部分转换成第二波长的光。 半导体多层堆叠包括II-VI势阱。 离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少10倍。
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公开(公告)号：US20110117686A1
公开(公告)日：2011-05-19
申请号：US13000604
申请日：2009-06-03
申请人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.
摘要翻译： 公开了提取光的方法。 制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。
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34.发明授权Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 有权适应短波长的LED用于多色，宽带或“白色”发射公开(公告)号：US07902543B2
公开(公告)日：2011-03-08
申请号：US12715957
申请日：2010-03-02
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。
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公开(公告)号：US20100224889A1
公开(公告)日：2010-09-09
申请号：US12781227
申请日：2010-05-17
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译： 提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。 势阱可能是量子阱。 半导体器件通常是LED，并且可以是白色或近白色的LED。 半导体器件还可以包括不位于pn结内的第三势阱。 半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。 此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。
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公开(公告)号：US07745814B2
公开(公告)日：2010-06-29
申请号：US11009241
申请日：2004-12-09
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译： 提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。 势阱可能是量子阱。 半导体器件通常是LED，并且可以是白色或近白色的LED。 半导体器件还可以包括不位于pn结内的第三势阱。 半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。 此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。
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公开(公告)号：US07719015B2
公开(公告)日：2010-05-18
申请号：US11009218
申请日：2004-12-09
申请人： Thomas J. Miller , Michael A. Haase
发明人： Thomas J. Miller , Michael A. Haase
IPC分类号： H01L33/00
摘要： An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译： 提供包括两个或更多个发光II型界面的LED，其中II型界面中的至少两个界面的转换能量不同于至少5％，或更通常至少10％，并且其中至少一种类型 II接口位于pn结内。 或者，提供包括两个或更多个发光II型界面的LED，其中至少两个II型界面的跃迁能量不同于至少5％，或更通常至少10％。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面，其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内，或者不在pn或pin结内。 在后一种情况下，II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。 此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。
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公开(公告)号：US20100117997A1
公开(公告)日：2010-05-13
申请号：US12528503
申请日：2008-02-26
申请人： Michael A. Haase
发明人： Michael A. Haase
CPC分类号： H01L27/156 , F21S41/14 , F21S41/143 , F21S41/18 , F21S41/255 , F21S41/43 , F21S41/645 , F21S41/663 , F21Y2105/10 , F21Y2115/10 , H01L27/124 , H01L27/1255 , H01L33/28 , H01L33/58
摘要： Light emitting systems and method of fabricating the same are disclosed. The light emitting system includes two or more monolithically integrated luminescent elements. Each luminescent element includes an electroluminescent device and a dedicated switching circuit for driving the electroluminescent device. At least one luminescent element includes a potential well for down converting light emitted by the electroluminescent device in the luminescent element.
摘要翻译： 公开了发光系统及其制造方法。 发光系统包括两个或更多个单片集成的发光元件。 每个发光元件包括电致发光器件和用于驱动电致发光器件的专用开关电路。 至少一个发光元件包括用于下变换由发光元件中的电致发光器件发射的光的势阱。
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39.发明申请公开(公告)号：US20070284592A1
公开(公告)日：2007-12-13
申请号：US11761148
申请日：2007-06-11
申请人： Michael A. Haase
发明人： Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Briefly, the present disclosure provides a device comprising: a) an LED capable of emitting light at a first wavelength; b) a re-emitting semiconductor construction which comprises a potential well not located within a pn junction; and c) a reflector positioned to reflect light emitted from the LED onto the re-emitting semiconductor construction. Alternately, the device comprises: a) an LED capable of emitting light at a first wavelength; b) a re-emitting semiconductor construction capable of emitting light at a second wavelength which comprises at least one potential well not located within a pn junction; and c) a reflector which transmits light at said first wavelength and reflects at least a portion of light at said second wavelength. Alternately, the device comprises a semiconductor unit comprising a first potential well located within a pn junction which comprises a LED capable of emitting light at a first wavelength, and a second potential well not located within a pn junction which comprises a re-emitting semiconductor construction.
摘要翻译： 简而言之，本公开提供了一种装置，包括：a）能够发射第一波长的光的LED; b）再发射半导体结构，其包括不位于pn结内的势阱; 以及c）反射器，其被定位成将从LED发射的光反射到再发射半导体结构上。 或者，该装置包括：a）能够发射第一波长的光的LED; b）能够发射第二波长的光的再发射半导体结构，其包括不位于pn结内的至少一个势阱; 以及c）透射所述第一波长的光并反射所述第二波长的至少一部分光的反射器。 或者，该装置包括半导体单元，该半导体单元包括位于pn结内的第一势阱，该第一势阱包括能够发射第一波长的光的LED和不位于pn结内的第二势阱，该第二势阱包括再发射半导体结构 。
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40.发明授权Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device 失效用于II-VI半导体光转换器件中欧姆接触的钝化覆盖层公开(公告)号：US06376273B2
公开(公告)日：2002-04-23
申请号：US09093588
申请日：1998-06-08
IPC分类号： H01L2100
摘要： A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.
摘要翻译： II-VI半导体器件包括一叠半导体层。 提供电耦合到堆叠的欧姆接触。 欧姆接触暴露于氧化物质时具有氧化速率。 钝化覆盖层覆盖欧姆接触，氧化速率小于欧姆接触的氧化速率。
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