公开(公告)号：US20120097983A1

公开(公告)日：2012-04-26

申请号：US13264487

申请日：2010-05-03

申请人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

发明人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

IPC分类号： H01L33/60 ,  H01L33/48

CPC分类号： H01L31/055 ,  H01L33/0079 ,  H01L33/502 ,  H01L2224/48463 ,  H01L2933/0041 ,  H05B33/10 ,  Y02E10/52

摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

摘要翻译： 公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。 一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。 所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。 执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。 载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。 执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

公开(公告)号：US20110186877A1

公开(公告)日：2011-08-04

申请号：US12995655

申请日：2009-04-23

申请人： Michael A. Haase ,  Thomas J. Miller ,  Andrew J. Ouderkirk ,  Catherine A. Leatherdale ,  Tommie W. Kelley

发明人： Michael A. Haase ,  Thomas J. Miller ,  Andrew J. Ouderkirk ,  Catherine A. Leatherdale ,  Tommie W. Kelley

IPC分类号： H01L33/50 ,  H01L33/08 ,  H01L33/26 ,  B82Y40/00

CPC分类号： H01L33/08 ,  H01L25/0756 ,  H01L33/504 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.

摘要翻译： 电致发光器件以泵浦波长发光。 第一光致发光元件覆盖电致发光器件的第一和第二区域，并将来自电致发光器件的第一区域的至少一些泵浦光转换成第一波长的光。 第二光致发光元件覆盖电致发光器件的第二区域而不覆盖电致发光器件的第一区域，并将泵波长的至少一些光转换成不同于第一波长的第二波长的光。 在一些实施例中，第一和第二光致发光元件基本上分别从电致发光器件的第一和第二区域入射的所有泵浦光转换。 蚀刻停止层可以分离第一和第二光致发光元件。

公开(公告)号：US20110121319A1

公开(公告)日：2011-05-26

申请号：US12744553

申请日：2008-11-07

申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01L31/153 ,  H01L31/0336 ,  H01L31/18

CPC分类号： H01L33/08 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/34

摘要： Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.

摘要翻译： 公开了发光器件及其制造方法。 发光器件包括发射蓝色或紫外光并附着到半导体结构的发光二极管（LED）。 半导体结构包括再发射半导体结构，其包括至少一层II-VI化合物，并将发射的蓝色或紫外光的至少一部分转换成更长波长的光。 该半导体结构还包括包括AlInAs或GaInAs化合物的蚀刻停止结构。 蚀刻停止能够承受能够蚀刻InP的蚀刻剂。

公开(公告)号：US20100295057A1

公开(公告)日：2010-11-25

申请号：US12810052

申请日：2008-12-09

申请人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

发明人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

IPC分类号： H01L33/30 ,  H01L33/44

CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/505

摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

摘要翻译： 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

公开(公告)号：US07700938B2

公开(公告)日：2010-04-20

申请号：US12172549

申请日：2008-07-14

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

公开(公告)号：US20080272362A1

公开(公告)日：2008-11-06

申请号：US12172549

申请日：2008-07-14

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US07402831B2

公开(公告)日：2008-07-22

申请号：US11009217

申请日：2004-12-09

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US07126160B2

公开(公告)日：2006-10-24

申请号：US10871424

申请日：2004-06-18

申请人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

发明人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

IPC分类号： H01L33/00

CPC分类号： H01S5/183

摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.

摘要翻译： 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x Zn 1-x Se，其中x在0.44和0.54之间。 通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或Al y Al 1-y，其中y在0.44和0.52之间。 在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。 另一方面，本发明提供一种包括根据本发明的分层结构的激光器。 另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

公开(公告)号：US5834330A

公开(公告)日：1998-11-10

申请号：US726731

申请日：1996-10-07

申请人： Michael A. Haase ,  Paul F. Baude ,  Thomas J. Miller

发明人： Michael A. Haase ,  Paul F. Baude ,  Thomas J. Miller

IPC分类号： H01L21/465 ,  H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L21/465 ,  H01S5/327 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/347

摘要： A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

摘要翻译： 使用HX的水溶液形式的选择性蚀刻剂制造II-VI半导体器件，其中X是Cl或Br。 II-VI半导体器件由多层构成。 可以通过将Mg引入到半导体层之一来实现选择性蚀刻。 所得到的器件可以包括含Mg的半导体层。

公开(公告)号：US08488641B2

公开(公告)日：2013-07-16

申请号：US13060554

申请日：2009-08-18

申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01S3/14 ,  H01S5/00

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/309 ,  H01S5/347 ,  H01S5/423 ,  H01S2301/18

摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

摘要翻译： 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。 光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。 第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。 第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。 半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。