Etching process for semiconductors
    4.
    发明授权
    Etching process for semiconductors 失效
    半导体蚀刻工艺

    公开(公告)号:US08765611B2

    公开(公告)日:2014-07-01

    申请号:US12917826

    申请日:2010-11-02

    IPC分类号: H01L21/027

    摘要: A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.

    摘要翻译: 提供了蚀刻半导体的方法,例如II-VI或III-V半导体。 该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻,去除半导体并用反应气体清洁室。 蚀刻掩模包括光致抗蚀剂。 使用这种方法,可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。