公开(公告)号：US06204203B1

公开(公告)日：2001-03-20

申请号：US09172582

申请日：1998-10-14

Applicant: Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

Inventor： Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

IPC: H01L2131

CPC classification number: H01L21/28185 ,  H01J37/32862 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.

Abstract translation: 一种形成金属氧化物电介质膜的方法。 根据本发明，使用金属有机前体将非晶金属氧化物介电膜沉积在衬底上。 然后将衬底在惰性环境中加热以将非晶态金属氧化物电介质转化为多晶金属氧化物电介质。 然后在含氧环境中加热多晶金属电介质。

公开(公告)号：US6037235A

公开(公告)日：2000-03-14

申请号：US152871

申请日：1998-09-14

Applicant: Pravin K. Narwankar ,  Randall S. Urdahl ,  Turgut Sahin ,  Wong-Cheng Shih

Inventor： Pravin K. Narwankar ,  Randall S. Urdahl ,  Turgut Sahin ,  Wong-Cheng Shih

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L21/20 ,  B05D5/12 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8242

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L28/56

Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.

Abstract translation: 描述了一种用于改善氮化硅膜和硅表面之间的界面的方法。 根据本发明，在衬底的硅表面上形成氮化硅膜。 当所述衬底被加热时，氮化硅膜暴露于包含氢气（H 2）的环境中。 在本发明的优选实施方案中，环境包括H 2和N 2。