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    Film bulk acoustic resonator structure and method of making
    31.
    发明授权
    Film bulk acoustic resonator structure and method of making 失效
    薄膜体声共振器结构及制作方法

    公开(公告)号：US06822535B2

    公开(公告)日：2004-11-23

    申请号：US10109811

    申请日：2002-03-28

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H03H302

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/586 ,  Y10T29/42

    摘要： A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

    摘要翻译： 在具有主表面的基板上形成膜体声波谐振器。 薄膜体声波谐振器包括细长的叠层。 细长堆叠包括一层位于压电材料层的第一表面上的第一导电层和沉积在该压电材料层的第二表面上的第二导电层之间的压电材料。 细长的堆叠被定位成相对于基底的主表面基本垂直。 第一和第二导电层基本上同时并在一个处理步骤中放置在压电材料层上。 衬底的主表面处于水平面，膜体声波谐振器的堆叠处于基本垂直的平面。 形成的谐振器结构可以用作谐振器或滤波器。

    Forming film bulk acoustic resonator filters
    32.
    发明授权
    Forming film bulk acoustic resonator filters 有权
    形成膜体声波谐振器滤波器

    公开(公告)号：US06816035B2

    公开(公告)日：2004-11-09

    申请号：US10214493

    申请日：2002-08-08

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H03H900

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42

    摘要： A film bulk acoustic resonator may be formed with a piezoelectric film having improved quality. The piezoelectric film may be deposited directly onto a single crystal silicon substrate. That substrate may be removed and selectively replaced with a lower electrode to form the film bulk acoustic resonator.

    摘要翻译： 膜体声波谐振器可以形成为具有改进质量的压电膜。 压电膜可以直接沉积在单晶硅衬底上。 可以去除该衬底并且用下电极选择性地替换以形成膜体声波谐振器。

    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges
    34.
    发明申请
    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges 有权
    执行铁电位电荷扫描读取的布置和方法

    公开(公告)号：US20090168637A1

    公开(公告)日：2009-07-02

    申请号：US11964580

    申请日：2007-12-26

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B3/00

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Film bulk acoustic resonator structure and method of making
    35.
    发明授权
    Film bulk acoustic resonator structure and method of making 有权

    公开(公告)号：US07154358B2

    公开(公告)日：2006-12-26

    申请号：US10942147

    申请日：2004-09-16

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H03H9/17 ,  H03H9/205 ,  H03H9/54

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/586 ,  Y10T29/42

    摘要： A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

    Methods for forming a frequency bulk acoustic resonator with uniform frequency utilizing multiple trimming layers and structures formed thereby
    37.
    发明授权
    Methods for forming a frequency bulk acoustic resonator with uniform frequency utilizing multiple trimming layers and structures formed thereby 有权
    用于形成具有均匀频率的频率体声波谐振器的方法利用多个修整层和由此形成的结构

    公开(公告)号：US06943648B2

    公开(公告)日：2005-09-13

    申请号：US10428692

    申请日：2003-05-01

    申请人： Jose Maiz ,  Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    发明人： Jose Maiz ,  Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    IPC分类号： H03H3/04 ,  H03H9/17 ,  H03H9/54

    CPC分类号： H03H9/172 ,  H03H3/04 ,  H03H2003/0414

    摘要： A method of forming a tuned resonator structure by first forming a base resonator structure that comprises a trimming layer on a resonator structure, wherein the trimming layer comprises at least one first low loss acoustic layer on the resonator structure, and at least one second low loss acoustic layer on the first low loss acoustic layer. Then, a “tuned” resonator structure is formed by measuring the frequency of the base resonator structure and removing the number of each of the two different low loss acoustic layers determined to be necessary to achieve the targeted frequency of the base resonator structure, thus improving the frequency control, reliability and performance of the resonating structure.

    摘要翻译： 一种形成调谐谐振器结构的方法，首先形成一个包括在谐振器结构上的微调层的基本谐振器结构，其中该微调层包括在谐振器结构上的至少一个第一低损失声学层和至少一个第二低损耗 声层在第一低损耗声层上。 然后，通过测量基底谐振器结构的频率并且去除被确定为实现基本谐振器结构的目标频率所必需的两个不同的低损耗声层中的每一个的数量，形成“调谐”谐振器结构，从而改善 谐振结构的频率控制，可靠性和性能。

    Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
    39.
    发明授权
    Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss 有权
    制造薄膜体声共振器以实现高Q和低损耗的方法

    公开(公告)号：US06662419B2

    公开(公告)日：2003-12-16

    申请号：US10023594

    申请日：2001-12-17

    申请人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    发明人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    IPC分类号： H04R1700

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

    摘要： A method for forming film bulk acoustic resonator devices includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.

    摘要翻译： 一种用于形成膜体声波谐振器装置的方法包括将第一电极的第一部分和压电层沉积到衬底上。 该方法包括：在压电层下方和第一电极的部分之下去除衬底的一部分，并将第一电极的第二部分沉积到压电膜层上并且沉积到第一电极的第一部分上。

    Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
    40.
    发明授权
    Structure to achieve high-Q and low insertion loss film bulk acoustic resonators 有权
    结构实现高Q和低插入损耗薄膜体声共振器

    公开(公告)号：US07116034B2

    公开(公告)日：2006-10-03

    申请号：US11065511

    申请日：2005-02-23

    申请人： Li-Peng Wang ,  Oing Ma ,  Valluri Rao

    发明人： Li-Peng Wang ,  Oing Ma ,  Valluri Rao

    IPC分类号： H01L41/08 ,  H03H9/02

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

    摘要： A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

    摘要翻译： 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。