公开(公告)号：US20200350576A1

公开(公告)日：2020-11-05

申请号：US16934201

申请日：2020-07-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Shuhei YOSHITOMI ,  Takuya HIROHASHI ,  Mako MOTOYOSHI ,  Yohei MOMMA ,  Junya GOTO

IPC: H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US20160329359A1

公开(公告)日：2016-11-10

申请号：US15217177

申请日：2016-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TSUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

公开(公告)号：US20150099179A1

公开(公告)日：2015-04-09

申请号：US14497386

申请日：2014-09-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya IKENUMA ,  Shuhei YOSHITOMI ,  Takahiro KAWAKAMI ,  Yumiko YONEDA (Former family: SAITO) ,  Yohei MOMMA

IPC: H01M4/36 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/587 ,  H01M4/04 ,  H01M10/0525 ,  H01M4/505

CPC classification number: H01M4/366 ,  H01M4/0402 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/587 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/028 ,  Y02T10/7011

Abstract: To increase the volume density or weight density of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese composite oxide represented by LixMnyMzOw that includes a region belonging to a space group C2/c and is covered with a carbon-containing layer is used as the positive electrode active material. The element M is an element other than lithium and manganese. The lithium manganese composite oxide has high structural stability and high capacity.

Abstract translation: 为了增加可以从正极活性物质中吸收和释放的锂离子的体积密度或重量密度，以实现二次电池的高容量和高能量密度。 作为正极活性物质，使用由LixMnyMzOw表示的包含空间群C2 / c的区域并被含碳层覆盖的锂锰复合氧化物。 元素M是除锂和锰之外的元素。 锂锰复合氧化物结构稳定性高，容量大。

公开(公告)号：US20150069393A1

公开(公告)日：2015-03-12

申请号：US14547285

申请日：2014-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Takayuki INOUE ,  Suzunosuke HIRAISHI ,  Erumu KIKUCHI ,  Hiromichi GODO ,  Shuhei YOSHITOMI ,  Koki INOUE ,  Akiharu MIYANAGA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L29/408

Abstract: Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

Abstract translation: 制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管， 以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间 氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。 此外，制造包括晶体管的半导体器件。

公开(公告)号：US20150044818A1

公开(公告)日：2015-02-12

申请号：US14521710

申请日：2014-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TSUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

IPC: H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Abstract translation: 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：US20150014605A1

公开(公告)日：2015-01-15

申请号：US14318727

申请日：2014-06-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Shuhei YOSHITOMI ,  Teruaki OCHIAI ,  Yumiko SAITO ,  Yohei MOMMA ,  Satoshi SEO ,  Mayumi MIKAMI ,  Shunsuke ADACHI

IPC: H01M4/505 ,  H01M4/525

CPC classification number: H01M4/505 ,  H01B1/08 ,  H01M4/362 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0525 ,  H01M2004/028 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122

Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0≦x/(y+z) 0, z>0, 0.26≦(y+z)/w

Abstract translation: 能够在正极活性物质中吸收和释放的锂离子的量增加，二次电池的高容量和高能量密度得以实现。 提供了由LixMnyMzOw表示的锂锰复合氧化物，其中M是除Li和Mn以外的金属元素，或Si或P，y，z和w满足0＆lt; nlE; x /（y + z）<2，y > 0，z> 0,0.26和nlE;（y + z）/ w <0.5和0.2