公开(公告)号：US20140325120A1

公开(公告)日：2014-10-30

申请号：US14043524

申请日：2013-10-01

Applicant: SK hynix Inc.

Inventor： Hae Chan PARK ,  Myoung Sub KIM ,  Se Ho LEE ,  Seung Yun LEE

IPC: G11C13/00

CPC classification number: G11C13/003 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/73

Abstract: A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.

Abstract translation: 电阻式存储器件包括存储单元阵列，该存储单元阵列包括耦合在字线和位线之间的单元存储单元，其中单元存储单元包括数据存储材料和基于非硅基的类型的双向存取器件，其串联连接 耦合在位线和字线之间的路径设置电路，适于基于路径控制信号，前向写入命令和反向写入命令向位线或字线提供编程脉冲，以及控制 适用于提供基于外部命令信号的写入路径控制信号，正向编程命令和反向编程命令的单元。

公开(公告)号：US20130094285A1

公开(公告)日：2013-04-18

申请号：US13706745

申请日：2012-12-06

Applicant: SK HYNIX INC.

Inventor： Hae Chan PARK ,  Se Ho LEE

IPC: G11C11/21

CPC classification number: G11C13/0004 ,  G11C11/21 ,  G11C11/5678 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/0078 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/74 ,  H01L45/04

Abstract: A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.