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    SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR MEMORY APPARATUS AND TEMPERATURE CONTROL METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR MEMORY APPARATUS AND TEMPERATURE CONTROL METHOD THEREOF 有权
    包括半导体存储器的半导体系统及其温度控制方法

    公开(公告)号：US20160086663A1

    公开(公告)日：2016-03-24

    申请号：US14956823

    申请日：2015-12-02

    Applicant: SK hynix Inc.

    Inventor： Seung Yun LEE ,  Hae Chan PARK ,  Myoung Sub KIM ,  Se Ho LEE

    IPC: G11C13/00

    CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0033 ,  G11C13/0038 ,  G11C2013/008

    Abstract: A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result.

    Abstract translation: 提供半导体存储装置及其温度控制方法。 半导体存储装置包括适于调节存储单元的温度的温度调节单元，以及温度调节单元，其适于感测温度调节单元的温度，将感测温度与参考温度范围进行比较，并且控制温度调节 基于比较结果在基准温度范围内调节其温度。

    SEMICONDUCTOR MEMORY APPARATUS AND TEMPERATURE CONTROL METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR MEMORY APPARATUS AND TEMPERATURE CONTROL METHOD THEREOF 有权
    半导体存储器及其温度控制方法

    公开(公告)号：US20150109856A1

    公开(公告)日：2015-04-23

    申请号：US14158496

    申请日：2014-01-17

    Applicant: SK hynix Inc.

    Inventor： Seung Yun LEE ,  Hae Chan PARK ,  Myoung Sub KIM ,  Se Ho LEE

    IPC: G11C13/00

    CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0033 ,  G11C2013/008

    Abstract: A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result.

    Abstract translation: 提供半导体存储装置及其温度控制方法。 半导体存储装置包括适于调节存储单元的温度的温度调节单元，以及温度调节单元，其适于感测温度调节单元的温度，将感测温度与参考温度范围进行比较，并且控制温度调节 基于比较结果在基准温度范围内调节其温度。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20150069582A1

    公开(公告)日：2015-03-12

    申请号：US14098176

    申请日：2013-12-05

    Applicant: SK hynix Inc.

    Inventor： Myoung Sub KIM

    IPC: H01L29/06 ,  H01L21/265

    CPC classification number: H01L29/06 ,  H01L21/265 ,  H01L21/26553 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7827

    Abstract: A semiconductor device includes a semiconductor substrate, a plurality of pillars vertically extending from the semiconductor substrate, each pillar including a groove formed in an upper surface thereof, a salicide layer formed to cover the upper surface and a lateral circumference of an upper end of each pillar and a lower electrode formed to cover an upper surface and a lateral surface of the salicide layer.

    Abstract translation: 半导体器件包括半导体衬底，从半导体衬底垂直延伸的多个柱，每个柱包括形成在其上表面中的凹槽，形成为覆盖每个的上表面和上端的横向圆周的自对准层 柱和形成为覆盖所述自对准硅化物层的上表面和侧表面的下电极。

    RESISTIVE MEMORY DEVICE AND OPERATION METHOD THEREOF
    10.
    发明申请
    RESISTIVE MEMORY DEVICE AND OPERATION METHOD THEREOF 有权
    电阻式存储器件及其操作方法

    公开(公告)号：US20140325120A1

    公开(公告)日：2014-10-30

    申请号：US14043524

    申请日：2013-10-01

    Applicant: SK hynix Inc.

    Inventor： Hae Chan PARK ,  Myoung Sub KIM ,  Se Ho LEE ,  Seung Yun LEE

    IPC: G11C13/00

    CPC classification number: G11C13/003 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/73

    Abstract: A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.

    Abstract translation: 电阻式存储器件包括存储单元阵列，该存储单元阵列包括耦合在字线和位线之间的单元存储单元，其中单元存储单元包括数据存储材料和基于非硅基的类型的双向存取器件，其串联连接 耦合在位线和字线之间的路径设置电路，适于基于路径控制信号，前向写入命令和反向写入命令向位线或字线提供编程脉冲，以及控制 适用于提供基于外部命令信号的写入路径控制信号，正向编程命令和反向编程命令的单元。

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