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公开(公告)号:US20220359420A1
公开(公告)日:2022-11-10
申请号:US17314916
申请日:2021-05-07
发明人: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
摘要: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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公开(公告)号:US20220199545A1
公开(公告)日:2022-06-23
申请号:US17126621
申请日:2020-12-18
发明人: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC分类号: H01L23/552 , H01L23/00 , H01L23/31 , H01L21/56 , H01L21/033
摘要: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
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公开(公告)号:US20240113038A1
公开(公告)日:2024-04-04
申请号:US18511428
申请日:2023-11-16
发明人: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
CPC分类号: H01L23/552 , H01L21/486 , H01L21/56 , H01L23/31 , H01L23/66 , H01Q1/2283
摘要: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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公开(公告)号:US20240063137A1
公开(公告)日:2024-02-22
申请号:US17820957
申请日:2022-08-19
发明人: JinHee Jung , ChangOh Kim
IPC分类号: H01L23/552 , H01L23/00 , H01L25/16 , H01L23/498 , H01L21/48
CPC分类号: H01L23/552 , H01L24/16 , H01L25/165 , H01L25/162 , H01L23/49816 , H01L23/49838 , H01L21/4853 , H01L21/4817 , H01L2924/3025 , H01L2224/16225 , H01L2924/16151 , H01L2924/1616
摘要: A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.
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公开(公告)号:US20240006335A1
公开(公告)日:2024-01-04
申请号:US17810028
申请日:2022-06-30
发明人: ChangOh Kim , JinHee Jung , OMin Kwon
IPC分类号: H01L23/552 , H01L23/31 , H01L23/538 , H01L21/48 , H01L21/56
CPC分类号: H01L23/552 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L21/4853 , H01L21/4857 , H01L21/565
摘要: A semiconductor device has a substrate. A semiconductor die is disposed over the substrate. A first encapsulant is deposited over the semiconductor die. A ferromagnetic film is disposed over the first encapsulant. A second encapsulant is deposited over the ferromagnetic film. A shielding layer is optionally formed over the substrate, first encapsulant, and second encapsulant.
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公开(公告)号:US20230207485A1
公开(公告)日:2023-06-29
申请号:US18174790
申请日:2023-02-27
发明人: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC分类号: H01L23/552 , H01L23/00 , H01L21/56 , H01L21/033 , H01L23/31
CPC分类号: H01L23/552 , H01L24/13 , H01L21/565 , H01L21/0334 , H01L23/3107 , H01L2924/15313
摘要: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
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37.
公开(公告)号:US20230154812A1
公开(公告)日:2023-05-18
申请号:US18154993
申请日:2023-01-16
发明人: JinHee Jung , ChangOh Kim
CPC分类号: H01L23/31 , H01L21/565 , H01L23/66 , H01L23/60
摘要: A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.
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公开(公告)号:US11616025B2
公开(公告)日:2023-03-28
申请号:US17126621
申请日:2020-12-18
发明人: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC分类号: H01L23/552 , H01L23/00 , H01L21/56 , H01L21/033 , H01L23/31
摘要: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
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公开(公告)号:US11610847B2
公开(公告)日:2023-03-21
申请号:US17314916
申请日:2021-05-07
发明人: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
摘要: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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40.
公开(公告)号:US11581233B2
公开(公告)日:2023-02-14
申请号:US17307795
申请日:2021-05-04
发明人: JinHee Jung , ChangOh Kim
摘要: A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.
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