Abstract:
A display apparatus includes: a substrate comprising a display area and a peripheral area outside the display area; a display element on the display area; and a pad on the peripheral area and comprising a main metal layer and a protective metal layer on the main metal layer and comprising molybdenum (Mo), titanium (Ti), and nickel (Ni).
Abstract:
A display device includes: a wiring line on a first inorganic insulating layer; a second inorganic insulating layer covering the wiring line; and a display element on the second inorganic insulating layer, wherein the wiring line includes: a lower layer including at least one of aluminum (Al) or an aluminum (Al) alloy; an upper layer on the lower layer and including a niobium titanium (NbxTiy) alloy; and an intermediate layer arranged between the lower layer and the upper layer and including at least one of a niobium titanium aluminum (NbxTiy Alz) alloy or a titanium aluminum (TixAly) alloy.
Abstract:
A display device includes: a first inorganic insulating layer; a wiring disposed on the first inorganic insulating layer; a second inorganic insulating layer covering the wiring; and a display element disposed on the second inorganic insulating layer, wherein the wiring includes a lower layer including at least one of aluminum and an aluminum alloy, an upper layer disposed on the lower layer and including at least one of titanium and titanium oxide, and an intermediate layer disposed between the lower layer and the upper layer and including titanium aluminide.
Abstract:
A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.
Abstract:
A display device includes a substrate including a display area and a peripheral area outside the display area. A circuit unit is disposed in the display area and includes a semiconductor layer. An insulating layer is on the semiconductor layer. A conductive layer is connected to the semiconductor layer through a contact hole in the insulating layer. The conductive layer includes an underlayer including a metal nitride including a first metal. A display element is disposed on the circuit unit and includes a pixel electrode electrically connected to the conductive layer. A connection layer is disposed under the conductive layer. The connection layer corresponds to the contact hole and includes a second metal.
Abstract:
A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.
Abstract:
A display device includes a first signal line including a first layer disposed on a substrate and containing aluminum (Al), a second layer disposed on the first layer and containing titanium nitride (TiNx), and a third layer disposed on the second layer and containing titanium (Ti), a second signal line crossing the first signal line, a first transistor including a first gate electrode connected to the first signal line and a first source electrode connected to the second signal line, and an organic light emitting diode disposed in a display area of the substrate to generate light corresponding to a data signal applied to the second signal line.
Abstract:
A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.
Abstract:
Provided is an organic light-emitting display apparatus including a substrate; a first electrode formed on the substrate; an emission layer formed on the first electrode; and a second electrode formed on the emission layer, wherein the first electrode includes a first layer including silver (Ag); and a second layer disposed on the first layer and comprising oxide of non-silver metal.
Abstract:
A color filter substrate including a base substrate, a color layer on the base substrate, a conductive layer on the color layer, and a grain compensation layer between the color layer and the conductive layer. The grain compensation layer includes zinc oxide and a metal oxide other than zinc oxide. A content of the metal oxide is lower than that of the zinc oxide in the grain compensation layer. The grain compensation layer increases the grain size of the conductive layer.