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31.发明申请公开(公告)号：US20180179441A1
公开(公告)日：2018-06-28
申请号：US15855436
申请日：2017-12-27
Inventor： Young Seok PARK , Shang Hyeun PARK , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Dae Young CHUNG , Taekhoon KIM , Yuho WON
CPC classification number: C09K11/883 , B82Y30/00 , B82Y40/00 , C09K11/025 , G02B5/22 , G02B5/223 , H01L27/322 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/502 , Y10S977/774 , Y10S977/818 , Y10S977/824 , Y10S977/892 , Y10S977/896 , Y10S977/95
Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
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公开(公告)号：US20170183565A1
公开(公告)日：2017-06-29
申请号：US15387107
申请日：2016-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae JUN , Taekhoon KIM , Garam PARK , Yong Seok HAN , Eun Joo JANG , Hyo Sook JANG , Tae Won JEONG , Shang Hyeun PARK
Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号：US20160214862A1
公开(公告)日：2016-07-28
申请号：US14908710
申请日：2014-07-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon KIM , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Hyunki KIM
Abstract: A process of synthesizing Mg—Se nanocrystals is provided, the process including reacting a first precursor including magnesium and a second precursor including selenium in the presence of a ligand compound in an organic solvent to form a nanocrystal of MgSe or an alloy thereof, wherein the organic solvent and the ligand compound do not include an oxygen functional group.
Abstract translation: 提供合成Mg-Se纳米晶体的方法，该方法包括在配体化合物存在下在有机溶剂中使包含镁的第一前体和包含硒的第二前体反应形成MgSe或其合金的纳米晶体，其中 有机溶剂和配体化合物不包括氧官能团。
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公开(公告)号：US20160167965A1
公开(公告)日：2016-06-16
申请号：US14909235
申请日：2014-07-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook JANG , Shin Ae JUN , Eun Joo JANG
IPC: C01B19/00
CPC classification number: C01B19/007 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2002/72 , C01P2004/64 , C01P2006/40 , C09K11/00 , C09K11/08 , C09K11/0805 , Y10S977/774 , Y10S977/896
Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
Abstract translation: 提供合成Ga-Se纳米晶体的方法，该方法包括：使含有镓的第一前体与含有硒的第二前体接触以获得Ga-Se单一前体; 并在配体化合物的存在下将溶液中的Ga-Se单体前体反应，并且任选地与含有除了镓和硒之外的元素（A）的第三前体反应以制备由化学式1表示的Ga-Se纳米晶体： GaSexAy [化学式1]其中x为约1.1至3，y为约0.1至4。
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公开(公告)号：US20230250337A1
公开(公告)日：2023-08-10
申请号：US18297755
申请日：2023-04-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Eun Joo JANG , Hyo Sook JANG , Hwea Yoon KIM , Yuho WON
CPC classification number: C09K11/883 , C01B19/007 , C01G9/08 , C09K11/56 , C09K11/62 , H10K50/115
Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20230209848A1
公开(公告)日：2023-06-29
申请号：US18057242
申请日：2022-11-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hong Kyu SEO , Kwanghee KIM , Kunsu PARK , Eun Joo JANG , Hyo Sook JANG , You Jung CHUNG , Soonmin CHA
CPC classification number: H01L51/5004 , H01L51/508 , H01L51/5092 , H01L2251/303
Abstract: A quantum dot device and an electronic device. The quantum dot device includes a first electrode and an opposite facing second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first electron auxiliary layer proximate to the light emitting layer and disposed between the second electrode and the light emitting layer and including a first electron auxiliary material, a second electron auxiliary layer proximate to the second electrode and disposed between the second electrode and the light emitting layer and including a second electron auxiliary material, and an insertion layer disposed between the first electron auxiliary layer and the second electron auxiliary layer and including an inorganic material, wherein a HOMO energy level of the inorganic material is deeper than a HOMO energy level of the first electron auxiliary material, and a HOMO energy level of the second electron auxiliary material, respectively.
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37.发明申请公开(公告)号：US20230133351A1
公开(公告)日：2023-05-04
申请号：US18050535
申请日：2022-10-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwanghee KIM , Hong Kyu SEO , Heejae LEE , Eun Joo JANG , Hyo Sook JANG
Abstract: An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).
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公开(公告)号：US20220348824A1
公开(公告)日：2022-11-03
申请号：US17866983
申请日：2022-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Yong Wook KIM , Eun Joo JANG , Hyo Sook JANG
Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
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公开(公告)号：US20210135138A1
公开(公告)日：2021-05-06
申请号：US17085167
申请日：2020-10-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwanghee KIM , Moon Gyu HAN , Eun Joo JANG , Hyo Sook JANG
Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.
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公开(公告)号：US20200283680A1
公开(公告)日：2020-09-10
申请号：US16883989
申请日：2020-05-26
Inventor： Shin Ae JUN , Taekhoon KIM , Garam PARK , Yong Seok HAN , Eun Joo JANG , Hyo Sook JANG , Tae Won JEONG , Shang Hyeun PARK
IPC: C09K11/02 , C09K11/88 , C09K11/70 , C08K3/32 , C08K3/30 , G02F1/1335 , G02F1/13357
Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
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