ELECTROLUMINESCENT DEVICE, PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20240381682A1

    公开(公告)日:2024-11-14

    申请号:US18661790

    申请日:2024-05-13

    Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same are provided. The method of manufacturing the electroluminescent device comprises disposing a light emitting layer including a semiconductor nanoparticle on a first electrode; depositing a composition including a zinc oxide nanoparticle containing a first metal onto the light emitting layer to provide an electron transport layer; and disposing a second electrode on the electron transport layer to provide the electroluminescent device. The first metal includes an alkaline earth metal, zirconium, tungsten, titanium, yttrium, aluminum, gallium, indium, tin, cobalt, vanadium, or a combination thereof. The zinc oxide nanoparticle has a particle size of 1 nanometer or more and 50 nanometers or less. Preparation of the zinc oxide nanoparticle includes contacting a first metal precursor, a zinc precursor, a base, and a metal carbonate in an organic solvent to form the zinc oxide nanoparticle.

    QUANTUM DOT DEVICE AND ELECTRONIC DEVICE
    5.
    发明公开

    公开(公告)号:US20230209848A1

    公开(公告)日:2023-06-29

    申请号:US18057242

    申请日:2022-11-21

    CPC classification number: H01L51/5004 H01L51/508 H01L51/5092 H01L2251/303

    Abstract: A quantum dot device and an electronic device. The quantum dot device includes a first electrode and an opposite facing second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first electron auxiliary layer proximate to the light emitting layer and disposed between the second electrode and the light emitting layer and including a first electron auxiliary material, a second electron auxiliary layer proximate to the second electrode and disposed between the second electrode and the light emitting layer and including a second electron auxiliary material, and an insertion layer disposed between the first electron auxiliary layer and the second electron auxiliary layer and including an inorganic material, wherein a HOMO energy level of the inorganic material is deeper than a HOMO energy level of the first electron auxiliary material, and a HOMO energy level of the second electron auxiliary material, respectively.

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