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    Washing machine with clothes dryer
    31.
    外观设计
    Washing machine with clothes dryer 有权

    公开(公告)号：USD1010962S1

    公开(公告)日：2024-01-09

    申请号：US29822975

    申请日：2022-01-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Designer： Myunggyu Kim ,  Jinnam Kim ,  Junghoon Hwang

    Abstract: FIG. 1 is a front right perspective view of a washing machine with clothes dryer, showing our new design;
    FIG. 2 is a front view thereof;
    FIG. 3 is a rear view thereof;
    FIG. 4 is a left-side view thereof;
    FIG. 5 is a right-side view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof;
    FIG. 8 is an enlarged detail view of the portion 8 in FIG. 1;
    FIG. 9 is an enlarged detail view of the portion 9 in FIG. 1;
    FIG. 10 is an enlarged detail view of the portion 10 in FIG. 1; and,
    FIG. 11 is an enlarged detail view of the portion 11 in FIG. 4.
    The even-dash broken lines illustrating portions of the washing machine with clothes dryer form no part of the claimed design. The dot-dash broken lines indicates cutoff boundaries for the enlarged detailed portion of the washing machine with clothes dryer form no part of the claimed design.

    Semiconductor device and semiconductor package
    36.
    发明授权
    Semiconductor device and semiconductor package 有权

    公开(公告)号：US11133240B2

    公开(公告)日：2021-09-28

    申请号：US16794782

    申请日：2020-02-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hakseung Lee ,  Jinnam Kim ,  Kwangjin Moon ,  Eunji Kim ,  Taeseong Kim ,  Sangjun Park

    IPC: H01L23/48 ,  H01L25/18 ,  H01L21/768 ,  H01L25/065 ,  H01L23/00

    Abstract: A semiconductor device includes a semiconductor substrate including at least one semiconductor structure, an interlayer insulating layer disposed on the semiconductor substrate, at least one first via structure penetrating the semiconductor substrate and the interlayer insulating layer, including a first region having a first width at an upper surface of the interlayer insulating layer and a second region extending from the first region and having a second width at a lower surface of the semiconductor substrate, wherein a side surface of the first region and a side surface of the second region have different profiles at a boundary between the first region and the second region, and at least one second via structure penetrating the semiconductor substrate and the interlayer insulating layer and having a third width greater than the first width at an upper surface of the interlayer insulating layer.

    SEMICONDUCTOR DEVICES HAVING PENETRATION VIAS
    38.
    发明申请
    SEMICONDUCTOR DEVICES HAVING PENETRATION VIAS 有权

    公开(公告)号：US20210043575A1

    公开(公告)日：2021-02-11

    申请号：US16849085

    申请日：2020-04-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hakseung Lee ,  Jinnam Kim ,  Hyoukyung Cho ,  Taeseong Kim ,  Kwangjin Moon

    IPC: H01L23/538

    Abstract: A semiconductor device may include a first semiconductor substrate having a first surface and a second surface opposite to each other, a first circuit layer provided on the first surface of the first semiconductor substrate, a connection pad provided on the second surface of the first semiconductor substrate, and a first penetration via and a second penetration via penetrating the first semiconductor substrate and at least a portion of the first circuit layer. The first penetration via and the second penetration via may be provided in a first penetration hole and a second penetration hole, respectively. Each of the first and second penetration holes may include a first portion, a second portion, and a third portion. A width of the first portion of the first penetration hole may be smaller than a width of the first portion of the second penetration hole.

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