公开(公告)号：US20170373271A1

公开(公告)日：2017-12-28

申请号：US15699343

申请日：2017-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kaoru HATANO ,  Masahiro KATAYAMA ,  Shingo EGUCHI ,  Yoshiaki OIKAWA ,  Ami NAKAMURA

IPC: H01L51/52 ,  H05B33/10 ,  H01L33/48 ,  H05B33/04 ,  H05B33/22 ,  H01L27/32 ,  H01L33/08 ,  H01L27/146

CPC classification number: H01L51/5246 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3276 ,  H01L33/08 ,  H01L33/48 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/5278 ,  H01L2227/323 ,  H01L2251/5338 ,  H01L2251/5361 ,  H05B33/04 ,  H05B33/10 ,  H05B33/22

Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

公开(公告)号：US20170271520A1

公开(公告)日：2017-09-21

申请号：US15609405

申请日：2017-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78648

Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

公开(公告)号：US20170102598A1

公开(公告)日：2017-04-13

申请号：US15285096

申请日：2016-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: G02F1/1362 ,  G06F3/01 ,  G02F1/1335 ,  G06F3/041 ,  G02F1/1345 ,  G02F1/1333

CPC classification number: G02F1/136286 ,  G02F1/13338 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US20170047450A1

公开(公告)日：2017-02-16

申请号：US15279513

申请日：2016-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Kenichi OKAZAKI ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L29/417 ,  G11C19/28 ,  H03K3/356 ,  H03K19/0944 ,  H03K19/096 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G11C19/28 ,  H01L27/1225 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/78696 ,  H03K3/037 ,  H03K3/356121 ,  H03K5/15093 ,  H03K19/09443 ,  H03K19/096

Abstract: A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.

Abstract translation: 提供具有优异电特性（例如导通电流，场效应迁移率或频率特性）的晶体管。 晶体管包括包括沟道形成区域，第一栅极电极，第二栅极电极，源极电极和漏极电极的氧化物半导体层。 氧化物半导体层位于第一栅极电极和第二栅极电极之间。 氧化物半导体层具有与源电极和漏电极接触的一对侧面，并且包括被第一栅极电极和第二栅电极围绕的区域，其间没有源电极和漏电极。

公开(公告)号：US20160126493A1

公开(公告)日：2016-05-05

申请号：US14991359

申请日：2016-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kaoru HATANO ,  Masahiro KATAYAMA ,  Shingo EGUCHI ,  Yoshiaki OIKAWA ,  Ami NAKAMURA

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3276 ,  H01L33/08 ,  H01L33/48 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/5278 ,  H01L2227/323 ,  H01L2251/5338 ,  H01L2251/5361 ,  H05B33/04 ,  H05B33/10 ,  H05B33/22

Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

Abstract translation: 本发明的目的是以简单的方式提供具有高可靠性的柔性发光装置。 此外，其目的是提供一种每个安装有发光装置的电子装置或照明装置。 通过使用具有以下结构的发光装置，可以获得高可靠性的发光装置：包括发光元件的元件部分介于具有柔性的基板和相对于 可见光和金属基板; 并且设置在元件部分之上和之下的绝缘层在元件部分的外周彼此接触以密封元件部分。 此外，通过使用具有这种结构的发光装置安装电子装置或照明装置，可以获得具有高可靠性的电子装置或照明装置。

公开(公告)号：US20150221678A1

公开(公告)日：2015-08-06

申请号：US14604999

申请日：2015-01-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/3265 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Abstract translation: 提供包括具有氧化物半导体和电容器的平面晶体管的半导体器件。 在半导体器件中，晶体管包括氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的栅电极，栅极上的第二绝缘膜，第二绝缘膜上的第三绝缘膜 以及在所述第三绝缘膜上的源极和漏极; 源极和漏极电连接到氧化物半导体膜; 电容器包括第一和第二导电膜和第二绝缘膜; 第一导电膜和栅电极设置在相同的表面上; 第二导电膜和源电极和漏电极设置在相同的表面上; 并且第二绝缘膜设置在第一和第二导电膜之间。

公开(公告)号：US20140175432A1

公开(公告)日：2014-06-26

申请号：US14107688

申请日：2013-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Masahiro KATAYAMA ,  Kenichi OKAZAKI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/1255

Abstract: A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening.

Abstract translation: 半导体器件包括：晶体管，包括绝缘膜，氧化物半导体膜，与氧化物半导体膜重叠的栅极;以及与氧化物半导体膜接触的一对电极; 电容器，包括绝缘膜上的第一透光导电膜，第一透光性导电膜上的电介质膜和位于电介质膜上的第二透光性导电膜; 晶体管的一对电极上的氧化物绝缘膜; 以及氧化物绝缘膜上的氮化物绝缘膜。 所述电介质膜是所述氮化物绝缘膜，所述氧化物绝缘膜在所述一对电极中的一个上方具有第一开口，所述氮化物绝缘膜在所述一对电极中的一个上方具有第二开口，并且所述第二开口位于所述一对电极的内部 一边比第一个开口。