公开(公告)号：US20190043896A1

公开(公告)日：2019-02-07

申请号：US16058479

申请日：2018-08-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi MURAKAMI ,  Masahiko HAYAKAWA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  G02F1/1335 ,  H01L23/498 ,  H01L23/31 ,  G02F1/1368

Abstract: A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor, a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

公开(公告)号：US20170256570A1

公开(公告)日：2017-09-07

申请号：US15598651

申请日：2017-05-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masahiko HAYAKAWA ,  Kiyoshi KATO ,  Mitsuaki OSAME

IPC: H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

公开(公告)号：US20160086982A1

公开(公告)日：2016-03-24

申请号：US14884257

申请日：2015-10-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Mitsuaki OSAME

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

Abstract: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.

公开(公告)号：US20140138720A1

公开(公告)日：2014-05-22

申请号：US14133820

申请日：2013-12-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi MURAKAMI ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L23/498

CPC classification number: H01L27/1248 ,  G02F1/133512 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  H01L23/3171 ,  H01L23/49827 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78651 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y10S438/95 ,  H01L2924/00

Abstract: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

Abstract translation: 具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线。 在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，第二开口部设置在包括栅极绝缘膜，第一氮化物绝缘膜 膜和第一氮化物绝缘膜，并且半导体通过第一开口部和第二开口部与布线连接。