公开(公告)号：US5599389A

公开(公告)日：1997-02-04

申请号：US340478

申请日：1994-11-14

申请人： Hiroshi Iwasaki

发明人： Hiroshi Iwasaki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L27/12 ,  H01L29/10 ,  H01L21/02

CPC分类号： H01L29/10 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546

摘要： According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance single-crystal layer consisting of the same compound semiconductor as the compound semiconductor constituting the base. Active elements are formed in the high-resistance single-crystal layer.

摘要翻译： 根据本发明，提供了一种化合物半导体衬底，其在包含高浓度杂质的化合物半导体基底上包括由构成基底的化合物半导体构成的相同化合物半导体的高电阻单晶层。 有源元件形成在高电阻单晶层中。

公开(公告)号：US5475157A

公开(公告)日：1995-12-12

申请号：US256245

申请日：1994-09-02

申请人： Shintaro Araki ,  Hiroshi Iwasaki ,  Hiroyasu Ohno ,  Isao Hashimoto ,  Teruaki Mukaiyama

发明人： Shintaro Araki ,  Hiroshi Iwasaki ,  Hiroyasu Ohno ,  Isao Hashimoto ,  Teruaki Mukaiyama

IPC分类号： C07C37/08 ,  C07C45/53

CPC分类号： C07C37/08 ,  Y02P20/52

摘要： There is disclosed a process for producing an aromatic hydroxylic compound by acid decomposition of a hydroperoxide having the general formula (I) ##STR1## wherein Ar represents an aromatic hydrocarbon group having a valence of n; and n represents an integer of 1 or 2, in the presence of an acid catalyst, thereby to provide an aromatic hydroxylic compound having the general formula (II)Ar--(OH)n (II)wherein Ar and n are the same as above defined, characterized in that tetrafluoroboric acid, hexafluorosilicic acid or hexafluorophosphoric acid is used as the acid catalyst. According to this process, the aromatic hydroxylic compound is obtained in a high yield while the by-production of hydroxyacetone is effectively suppressed. In paricular, a more effective suppression of by-production of hydroxyacetone and a higher yield of the target compound can be achieved by carrying out the acid decomposition reaction in two stages wherein the first stage of the reaction is carried out in the first reactor at a temperature of 50.degree.-95.degree. C., the resultant reaction mixture is sent to the second reactor, and the second stage of the reaction is then carried out in the second reactor at a temperature of 80.degree.-120.degree. C.

摘要翻译： PCT No.PCT / JP93 / 01586 Sec。 371日期：1994年9月2日 102（e）1994年9月2日PCT 1993年11月1日PCT公布。 公开号WO94 / 10115 PCT 日本公报1994年5月11日。公开了通过酸分解具有通式（I）c的化合价n为n的烃基的氢过氧化物制备芳族羟基化合物的方法。 并且n表示1或2的整数，在酸催化剂的存在下，由此提供具有通式（II）的Ar-（OH）n（II）的芳族羟基化合物，其中Ar和n与上述相同 其特征在于使用四氟硼酸，六氟硅酸或六氟磷酸作为酸催化剂。 根据该方法，以高产率获得芳族羟基化合物，同时有效抑制羟基丙酮的副产物。 在这种情况下，可以通过在两个阶段中进行酸分解反应来实现对羟基丙酮的副产物的更有效抑制和目标化合物的较高产率，其中反应的第一阶段在第一反应器中以 温度为50-95℃，将所得反应混合物送至第二反应器，然后在第二反应器中在80-120℃的温度下进行第二阶段反应。

公开(公告)号：US5473075A

公开(公告)日：1995-12-05

申请号：US123117

申请日：1993-09-20

申请人： Yoshio Ohara ,  Mikio Suzuki ,  Yoshinobu Yanagawa ,  Hiroshi Iwasaki ,  Nobuhide Miyachi

发明人： Yoshio Ohara ,  Mikio Suzuki ,  Yoshinobu Yanagawa ,  Hiroshi Iwasaki ,  Nobuhide Miyachi

IPC分类号： C07B57/00 ,  C07D215/14 ,  C07D405/06 ,  C07D215/04

CPC分类号： C07D405/06 ,  C07D215/14

摘要： A diastereomer salt of optically active quinolinemevalonic acid of the formula ((-)I.(+)II): ##STR1##

摘要翻译： 式（（ - ）I。（+）II）的光学活性喹啉酮戊酸的非对映异构体盐：（（ - ）I。（+）II）

公开(公告)号：US5405792A

公开(公告)日：1995-04-11

申请号：US941151

申请日：1992-09-04

申请人： Takeshi Nogami ,  Hiroshi Iwasaki

发明人： Takeshi Nogami ,  Hiroshi Iwasaki

IPC分类号： H01L21/266 ,  H01L21/338 ,  H01L21/306 ,  H01L21/44

CPC分类号： H01L29/66878 ,  H01L21/266 ,  Y10S148/14

摘要： The method of manufacturing the SB FET according to the present invention includes a first step of forming a refractory metal film on a semiconductor substrate, a second step of forming a first ion-implanted region within the semiconductor substrate, by an ion implantation process, a third step, independent of the second step, of forming second and third ion implantation regions in the semiconductor substrate by an ion implantation process during which impurity ions pass through the first film, with the second and third ion implantation regions being adjacent to the first ion implanted region. A fourth step of forming a channel region, source region and drain region by annealing to activate said first, second, and third ion implanted regions using the first film as a protective film, and bringing the first film in Schottky contact with the channel region, a fifth step of forming a Schottky gate electrode in Schottky contact with the channel region by patterning the first film after the channel, source and drain regions have been formed, with the first film being selectively maintained to prevent exposure of the channel region underlying the Schottky gate electrode, and a sixth step of forming a second film made of a refractory metal or a refractory metal compound on the first film forming a portion of said Schottky gate electrode.

摘要翻译： 根据本发明的制造SB FET的方法包括在半导体衬底上形成难熔金属膜的第一步骤，通过离子注入工艺在半导体衬底内形成第一离子注入区域的第二步骤， 第三步，独立于第二步骤，通过离子注入工艺在半导体衬底中形成第二和第三离子注入区，在该过程中，杂质离子通过第一膜，第二和第三离子注入区与第一离子相邻 植入区域。 通过退火形成沟道区域，源极区域和漏极区域的第四步骤，以使用第一膜膜作为保护膜来激活所述第一，第二和第三离子注入区域，并使第一膜片与沟道区域肖特基接触， 通过在沟道，源极和漏极区域形成之后对第一膜进行构图而形成肖特基接触的肖特基栅电极的第五步骤，其中第一膜被选择性地保持以防止肖特基下方的沟道区域的暴露 栅电极，以及在形成所述肖特基栅电极的一部分的第一膜上形成由难熔金属或难熔金属化合物制成的第二膜的第六步骤。

公开(公告)号：US5187111A

公开(公告)日：1993-02-16

申请号：US688711

申请日：1991-04-23

申请人： Takeshi Nogami ,  Hiroshi Iwasaki

发明人： Takeshi Nogami ,  Hiroshi Iwasaki

IPC分类号： H01L21/266 ,  H01L21/338

CPC分类号： H01L29/66878 ,  H01L21/266 ,  Y10S148/14

摘要： The method of manufacturing the SB FET according to the present invention includes a first step of forming a first WN metal film on a GaAs substrate, a second step of forming a first ion-implanted region within the GaAs substrate, by ion implantation of n-type impurities, a third step of forming a second Mo metal film, a fourth step of forming second and third ion-implanted regions adjacent to said first ion-implanted region, within the GaAs substrate, and a fifth step of activating said first, second, and third ion-implanted regions. In the ion implantation of the second step, impurity ions are implanted into the GaAs substrate, through the first metal film. In the fifth step, the first metal film serves as a protective film during the activation of the first, second, and third ion-implanted regions.

摘要翻译： 根据本发明的制造SB FET的方法包括在GaAs衬底上形成第一WN金属膜的第一步骤，通过n型离子注入形成GaAs衬底内的第一离子注入区域的第二步骤， 形成第二Mo金属膜的第三步骤，在GaAs衬底内形成与所述第一离子注入区域相邻的第二和第三离子注入区域的第四步骤，以及第五步骤，激活所述第一，第二 ，和第三离子注入区域。 在第二步的离子注入中，通过第一金属膜将杂质离子注入到GaAs衬底中。 在第五步骤中，第一金属膜在第一，第二和第三离子注入区域的激活期间用作保护膜。

公开(公告)号：US5148651A

公开(公告)日：1992-09-22

申请号：US771629

申请日：1991-10-03

申请人： Tadao Masuda ,  Masahiro Tsukuda ,  Shigeru Doiura ,  Kaoru Kawanishi ,  Hiroshi Iwasaki

发明人： Tadao Masuda ,  Masahiro Tsukuda ,  Shigeru Doiura ,  Kaoru Kawanishi ,  Hiroshi Iwasaki

IPC分类号： B65B69/00

CPC分类号： B65B69/0033

摘要： An unwrapping apparatus for unwrapping a palletized and stretch-wrapped load, the apparatus enables the prevention of the articles from falling off and easy disposal of the used stretchable film. The apparatus comprises first and second upright frames between which a load to be unwrapped is conveyed, the first upright frame including two lower grippers for gripping a lower edge of the stretchable film, and an elevated cutter unit having two pairs of pinch rollers and a heat cutter. The second upright frame includes a carriage having a platen to press the top of the load to be unwrapped and a pair of swing arms symmetrically arranged on either side of the platen and extending toward the first upright frame. Upper grippers are secured to the swing arms, respectively. The stretchable film can be gripped during the cutting and unwrapping of the load to maintain tension and prevent the articles in the load from falling off. In addition, the used stretchable film can be discharged in a compressed, compact form.

摘要翻译： 用于展开堆垛和拉伸包裹的负载的展开装置，该装置能够防止物品脱落并易于处理所使用的可拉伸膜。 该装置包括第一和第二直立框架，在该框架之间传送要展开的负载物，第一直立框架包括用于夹紧可拉伸膜的下边缘的两个下夹具和具有两对夹送辊和热量的升高的切割器单元 刀具。 第二直立框架包括滑架，该滑架具有用于按压要打开的负载的顶部的压板和对称地布置在压板的任一侧上且朝向第一直立框架延伸的一对摆臂。 上夹具分别固定在摆臂上。 可以在切割和拆卸负载期间夹持伸缩膜，以保持张力，并防止负载中的物品脱落。 此外，所使用的可拉伸膜可以以压缩，紧凑的形式排出。

公开(公告)号：US5026708A

公开(公告)日：1991-06-25

申请号：US243468

申请日：1988-09-12

申请人： Yoshihiro Fujikawa ,  Mikio Suzuki ,  Hiroshi Iwasaki ,  Mitsuaki Sakashita ,  Masaki Kitahara

发明人： Yoshihiro Fujikawa ,  Mikio Suzuki ,  Hiroshi Iwasaki ,  Mitsuaki Sakashita ,  Masaki Kitahara

IPC分类号： C07D239/26 ,  C07D405/06

CPC分类号： C07D239/26 ,  C07D405/06

摘要： A compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are independently hydrogen, C.sub.1-6 alkyl, C.sub.3-6 cycloalkyl, C.sub.1-3 alkoxy, n-butoxy, i-butoxy, sec-butoxy, R.sup.5 R.sup.6 N-- (wherein R.sup.5 and R.sup.6 are independently hydrogen or C.sub.1-3 alkyl), trifluoromethyl, trifluoromethoxy, difluoromethoxy, fluoro, chloro, bromo, phenyl, phenoxy, benzyloxy, hydroxy, trimethylsilyloxy, diphenyl-t-butylsilyloxy, hydroxymethyl or --O(CH.sub.2).sub.l OR.sup.15 (wherein R.sup.15 is hydrogen or C.sub.1-3 alkyl, and l is 1, 2 or 3); or when located at the ortho position to each other, R.sup.1 and R.sup.2 together form --CH.dbd.CH--CH.dbd.CH-- or methylene dioxy; Y is --CH.sub.2 --, --CH.sub.2 CH.sub.2 --, --CH.dbd.CH--, --CH.sub.2 --CH.dbd.CH-- or --CH.dbd.CH--CH.sub.2 --; Z is --Q--CH.sub.2 WCH.sub.2 --CO.sub.2 R.sup.12, ##STR2## (wherein Q is --C(O)--, --C(OR.sup.13).sub.2 -- or --CH(OH)--; W is --C(O)--, --C(OR.sup.13).sub.2 -- or --C(R.sup.11) (OH)--; R.sup.11 is hydrogen or C.sub.1-3 alkyl; R.sup.12 is hydrogen or R.sup.14 (wherein R.sup.14 is physiologically hydrolyzable alkyl or M (wherein M is NH.sub.4, sodium, potassium, 1/2 calcium or a hydrate of lower alkylamine, di-lower alkylamine or tri-lower alkylamine)); two R.sup.13 are independently primary or secondary C.sub.1-6 alkyl; or two R.sup.13 together form --(CH.sub.2).sub.2 -- or --(CH.sub.2).sub.3 --; R.sup.16 and R.sup.17 are independently hydrogen or C.sub.1-3 alkyl; R.sup.3 is hydrogen, C.sub.1-6 alkyl, C.sub.2-3 alkenyl, C.sub.3-6 cycloalkyl, ##STR3## (wherein R.sup.7 is hydrogen, C.sub.1-4 alkyl, C.sub.1-3 alkoxy, fluoro, chloro, bromo or trifluoromethyl), phenyl--(CH.sub.2).sub.m -- (wherein m is 1, 2 or 3), --(CH.sub.2).sub.n CH(CH.sub.3)--phenyl or phenyl--(CH.sub.2).sub.n CH(CH.sub.3)-- (wherein n is 0, 1 or 2): R.sup.4 is C.sub.1-8 alkyl, C.sub.3-7 cycloalkyl, .alpha.- or .beta.-naphthyl, 2--, 3-- or 4-pyridyl, ##STR4## (wherein R.sup.8, R.sup.9 and R.sup.10 are independently hydrogen, C.sub.1-4 alkyl, C.sub.1-8 alkoxy, C.sub.1-3 alkylthio, chloro, bromo, fluoro, --NR.sup.18 R.sup.19 (wherein R.sup.18 and R.sup.19 are independently C.sub.1-3 alkyl), trichloromethyl, trifluoromethyl, trifluoromethoxy, difluoromethoxy, phenoxy, benzyloxy, hydroxy, trimethylsilyloxy, diphenyl-t-butylsilyloxy, hydroxymethyl or --O(CH.sub.2).sub.k OR.sup.20 (wherein R.sup.20 is hydrogen or C.sub.1-3 alkyl, and k is 1, 2 or 3); when R.sup.10 is hydrogen and when located at the ortho position to each other, R.sup.8 and R.sup.9 together form --OC(R.sup.23) (R.sup.24)O-- (wherein R.sup.23 and R.sup.24 are independently hydrogen or C.sub.1-3 alkyl)), ##STR5## (wherein R.sup.25 is hydrogen, C.sub.1-4 alkyl, C.sub.1-3 alkoxy, chloro, bromo, or fluoro) or C.sub.1-3 alkyl substituted by 1 member selected from the group consisting of ##STR6## (wherein R.sup.8, R.sup.9 and R.sup.10 are as defined above) and naphthyl and by 0, 1 or 2 members selected from the group consisting of C.sub.1-8 alkyl.

公开(公告)号：US4965220A

公开(公告)日：1990-10-23

申请号：US306393

申请日：1989-02-06

申请人： Hiroshi Iwasaki

发明人： Hiroshi Iwasaki

IPC分类号： H01L21/76 ,  H01L21/225 ,  H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/73 ,  H01L29/732

CPC分类号： H01L21/2257 ,  H01L21/8249 ,  H01L27/0623 ,  Y10S148/01 ,  Y10S148/032 ,  Y10S148/037 ,  Y10S148/038 ,  Y10S148/082 ,  Y10S148/123 ,  Y10S148/124

摘要： A semiconductor integrated circuit device is disclosed which comprises a bipolar transistor and a field effect transistor, in which a gate electrode of the field effect transistor and a collector electrode of the bipolar transistor are formed from a common electrode layer of a high impurity concentration, and in which the collector region of the bipolar transistor comprises a region of a high impurity concentration having a conductivity type the same as that of the collector region of the bipolar transistor.

公开(公告)号：US4575702A

公开(公告)日：1986-03-11

申请号：US613071

申请日：1984-05-22

申请人： Takeshi Nitta ,  Hiroshi Iwasaki

发明人： Takeshi Nitta ,  Hiroshi Iwasaki

IPC分类号： B23Q3/154 ,  H01F7/20

CPC分类号： B23Q3/1546

摘要： A permanent magnetic chuck in which a workpiece holding plate comprises a plurality of permanent magnets each with a magnetic isolator which are alternatively laminated, said magnetic pole pieces and said magnetic isolator are respectively constructed as layers of a plurality of thin magnetic layers and a plurality of thin non-magnetic layers each of which is disposed alternately with each of said magnetic layers; and a sliding magnet member which comprises a plurality of disk-shaped permanent magnets disposed in round holes provided in said member at the same pitch as the lamination pitch of the workpiece holding plate is disposed. The permanent magnets of the workpiece holding plate are so disposed that the same magnetic poles of the adjacent magnets are opposed to each other. The permanent magnets of the sliding magnet member are so disposed that the magnetic lines of flux pass vertically and that the opposite magnetic poles of the adjacent permanent magnets are opposed to each other.

摘要翻译： 一种永久磁性卡盘，其中工件保持板包括多个永磁体，每个永磁体具有交替层压的磁隔离器，所述磁极片和所述磁隔离器分别构造为多层薄磁层和多个 薄的非磁性层各自与每个所述磁性层交替设置; 并且设置滑动磁体构件，其包括设置在与所述工件保持板的层叠间距相同的间距处设置在所述构件中的圆孔中的多个盘形永磁体。 工件夹持板的永久磁铁被布置成使得相邻磁体的相同的磁极彼此相对。 滑动磁体构件的永久磁铁配置成使得磁通线垂直通过，相邻永久磁铁的相对的磁极彼此相对。

公开(公告)号：US4404643A

公开(公告)日：1983-09-13

申请号：US233716

申请日：1981-02-12

申请人： Shin Ojima ,  Kazutaka Watanabe ,  Hiroshi Iwasaki

发明人： Shin Ojima ,  Kazutaka Watanabe ,  Hiroshi Iwasaki

IPC分类号： B43K29/093 ,  G06F3/02 ,  G06F15/02

CPC分类号： G06F15/0208

摘要： A portable electronic calculator which has incorporated therein a writing instrument. A miniature electronic calculator is built in a rectangular, elongated body. A cover made of metal covers a control panel for the electronic calculator and a display part, and the cover is mounted on the body to be removable therefrom by sliding the cover in the lengthwise direction of the body. The side marginal portions of the cover are bent inwardly for engagement with both side surfaces of the body to reinforce the body when the cover has been mounted thereon.

摘要翻译： 一种其中结合有书写工具的便携式电子计算器。 一个微型电子计算器内置一个长方形的细长体。 由金属制成的盖覆盖电子计算器的控制面板和显示部件，并且通过沿着身体的长度方向滑动盖子将盖安装在主体上以便可拆卸。 盖子的侧边缘部分向内弯曲以与主体的两个侧表面接合，以在盖子安装在其上时加强身体。