公开(公告)号：US07569408B1

公开(公告)日：2009-08-04

申请号：US08841644

申请日：1997-04-30

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： H01L21/00

CPC分类号： H01L21/76897 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  Y10S257/90

摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

公开(公告)号：US06822261B2

公开(公告)日：2004-11-23

申请号：US09978720

申请日：2001-10-18

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： H01L2904

CPC分类号： H01L21/76897 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  Y10S257/90

摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

摘要翻译： 一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有氧化物 金属。 根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置 的门。 此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

公开(公告)号：US06323528B1

公开(公告)日：2001-11-27

申请号：US09124111

申请日：1998-07-29

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： H01L2976

CPC分类号： H01L21/76897 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  Y10S257/90

摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

摘要翻译： 一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有氧化物 金属。 根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置 的门。 此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

公开(公告)号：US5289300A

公开(公告)日：1994-02-22

申请号：US829263

申请日：1992-02-03

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani ,  Takeshi Nishi

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani ,  Takeshi Nishi

IPC分类号： G02F1/1334 ,  G02F1/1343 ,  G02F1/1365 ,  G02F1/13

CPC分类号： G02F1/1334 ,  G02F1/13439 ,  G02F1/1365

摘要： A method of manufacturing electro-optical devices is described. The method comprises steps of forming a first electrode arrangement on a substrate, coating an electro-optical modulating layer comprising a liquid crystal on the substrate over the first electrode arrangement and forming a second electrode arrangement on the electro-optical modulating layer. The electro-optical modulating layer is prepared by dispersing a liquid crystal in a pre-polymer which can be cured by UV light or other suitable procedures.

摘要翻译： 描述制造电光装置的方法。 该方法包括以下步骤：在衬底上形成第一电极装置，在第一电极装置上在衬底上涂覆包括液晶的电光调制层，并在电光调制层上形成第二电极装置。 通过将液晶分散在可以通过UV光或其它合适方法固化的预聚物中来制备电光调制层。

公开(公告)号：US5474945A

公开(公告)日：1995-12-12

申请号：US147580

申请日：1993-11-05

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/60 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L21/76897 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245 ,  Y10S257/90

摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

摘要翻译： 一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有 金属。 根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置 的门。 此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

公开(公告)号：US5474629A

公开(公告)日：1995-12-12

申请号：US803224

申请日：1991-12-06

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： G02F1/1334 ,  G02F1/1339 ,  G02F1/1341 ,  B32B31/00

CPC分类号： G02F1/1334 ,  B32B37/1207 ,  B32B2310/0806 ,  G02F1/13392 ,  G02F1/1341 ,  Y10T156/109 ,  Y10T156/1093

摘要： A method for manufacturing a liquid crystal device, particularly a dispersion-type liquid crystal electrooptical device, which comprises a pair of substrates having incorporated therebetween a light-control layer comprising a transparent solid and a liquid crystal material and spacers, said substrates having provided thereon electrode layers and at least one of the substrates being transparent, is disclosed. The method comprises:coating the electrode layer side of one of the substrates with a material which gives the light-control layer; and, laminating and fixing the pair of substrates to give a predetermined layered structure.The spacers are uniformly disposed between the substrates by dispersing spacers on one of the electrode layers or on the light-control layer or applying a mixture comprising spacers, a liquid crystal material and a material for providing a transparent solid on one of the electrode layers.The process is economical and enables large-sealed liquid crystal electrooptical devices which can provide uniform displays, at an extremely few steps comprising coating once the substrate with a material for the light-control layer.

摘要翻译： 一种液晶装置的制造方法，特别是分散型液晶电光装置，其特征在于，包括一对基板，其中包括透明固体和液晶材料的光控制层和间隔物，所述基板设置在其上 公开了电极层和至少一个衬底是透明的。 该方法包括：用提供光控制层的材料涂覆其中一个基板的电极层侧; 并且层叠并固定该对基板以产生预定的层状结构。 通过将间隔物分散在电极层之一或光控制层上，或者施加包含间隔物，液晶材料和用于在一个电极层上提供透明固体的材料的混合物，将间隔物均匀地设置在基板之间。 该方法是经济的，并且能够提供均匀显示器的大密封液晶电光装置，其极小的步骤包括使用光控层的材料涂覆基板。

公开(公告)号：US5164322A

公开(公告)日：1992-11-17

申请号：US507526

申请日：1990-04-11

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L31/105

CPC分类号： H01L31/1055 ,  H01L27/14643 ,  H01L31/022408

摘要： An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor layer and a second electrode. The opposed surfaces of semiconductor layer is completely covered by the first and second electrodes.

公开(公告)号：US4999693A

公开(公告)日：1991-03-12

申请号：US851

申请日：1987-01-06

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L31/105

CPC分类号： H01L31/1055 ,  H01L27/14643 ,  H01L31/022408

摘要： An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor layer and a second electrode. The opposed surfaces of semiconductor layer is completely covered by the first and second electrodes.

摘要翻译： 示出了改进的光电转换装置。 该装置包括多个光电半导体元件，每个光电半导体元件由第一电极和半导体层以及第二电极组成。 半导体层的相对表面被第一和第二电极完全覆盖。

公开(公告)号：US5289030A

公开(公告)日：1994-02-22

申请号：US846164

申请日：1992-03-05

申请人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Akira Mase ,  Toshiji Hamatani

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/60 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/76 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L21/76897 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245 ,  Y10S257/90

摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

摘要翻译： 一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有氧化物 金属。 根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置 的门。 此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

公开(公告)号：US4888305A

公开(公告)日：1989-12-19

申请号：US320788

申请日：1989-03-09

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，刚刚形成的半导体层经历光退火，潜在的悬挂键出现在表面和间隙上，然后将中和剂引入半导体的氛围。 这样形成的半导体表现出SEL效应代替Staebler-Wronski效应。