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公开(公告)号：US20130163317A1
公开(公告)日：2013-06-27
申请号：US13680669
申请日：2012-11-19
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11C11/16
CPC classification number: G11C11/161 , G11C7/04
Abstract: There is provided a memory element having a layered structure, including a memory layer having magnetization perpendicular to a film face in which a magnetization direction is changed corresponding to information, and including a Co—Fe—B magnetic layer and at least on non-magnetic layer; the magnetization direction being changed by flowing a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to the film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, further including a laminated structure where an oxide layer, the Co—Fe—B magnetic layer and the non-magnetic layer are laminated is formed.
Abstract translation: 提供了一种具有分层结构的存储元件，包括具有垂直于膜面的磁化的存储层，其中磁化方向根据信息而改变，并且包括Co-Fe-B磁性层和至少在非磁性 层; 通过使分层结构的叠层方向上的电流流动来改变磁化方向，以将信息记录在存储层中，具有垂直于胶片面的磁化的磁化固定层成为存储在存储层中的信息的基础 以及由非磁性材料形成并设置在所述存储层和所述磁化固定层之间的中间层，还包括其中氧化物层，所述Co-Fe-B磁性层和所述非磁性固定层的层叠结构， 形成磁性层。
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公开(公告)号：US20130163315A1
公开(公告)日：2013-06-27
申请号：US13675416
申请日：2012-11-13
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11C11/16
CPC classification number: G11C11/161
Abstract: A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer. The non-magnetic layer includes Cr. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
Abstract translation: 存储元件包括分层结构。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于膜面的磁化，其中磁化方向根据信息而改变，并且通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储器中 层。 磁化固定层具有垂直于成为存储在存储层中的信息的基底的膜面的磁化，并且具有包括至少两个铁磁层和非磁性层的叠层铁钉结构。 非磁性层包括Cr。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。
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公开(公告)号：US11276729B2
公开(公告)日：2022-03-15
申请号：US16078759
申请日：2016-12-01
Applicant: SONY CORPORATION
Inventor： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo
Abstract: A magnetoresistive element includes: a first laminated structure body having a first surface and a second surface 20B facing the first surface; and a second laminated structure body formed by laminating a storage layer, an intermediate layer, and a magnetization fixed layer, the second laminated structure body having a first surface and a second surface facing the first surface, the first surface being positioned facing the second surface of the first laminated structure body. The first laminated structure body has a laminated structure including, from the first surface side of the first laminated structure body, a first layer made of a metal nitride and a second layer made of ruthenium or a ruthenium compound.
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公开(公告)号：US10854256B2
公开(公告)日：2020-12-01
申请号：US16777222
申请日：2020-01-30
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US10566523B2
公开(公告)日：2020-02-18
申请号：US16150874
申请日：2018-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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Patent Agency Ranking
公开(公告)号：US20190267063A1
公开(公告)日：2019-08-29
申请号：US16408840
申请日：2019-05-10
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US10375698B2
公开(公告)日：2019-08-06
申请号：US15650174
申请日：2017-07-14
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC: G11C11/00 , H04W72/04 , H01L43/08 , H01L27/22 , G11C11/16 , G11C5/08 , H01L43/10 , H04W72/08 , H04W72/12
Abstract: A memory system is provided. The memory system includes a memory area configured to include a plurality of memory cells; a driving area configured to drive the memory cells; and a control area configured to supply a standby current to the memory area before the memory area records data; a plurality of word lines is crossing to a plurality of bit lines via the plurality of memory cells; and wherein each of the memory cells includes a memory layer, a magnetic fixed layer, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer.
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公开(公告)号：US10332577B2
公开(公告)日：2019-06-25
申请号：US15943361
申请日：2018-04-02
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US20190036019A1
公开(公告)日：2019-01-31
申请号：US16150874
申请日：2018-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US10128436B2
公开(公告)日：2018-11-13
申请号：US15933512
申请日：2018-03-23
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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