摘要:
The present invention is directed to a process for joining tantalum clad steel structures. The process broadly comprises: a) providing a first tantalum clad section, said first tantalum clad section comprising a tantalum layer over a steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, b) providing a second tantalum clad section, said second tantalum clad section comprising a tantalum layer over a. steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, c) locating said steel edge regions adjacent each other, d) welding the steel edge regions together, e) cold spraying a tantalum powder onto the welded edge regions and over the tantalum layers adjacent said edge regions thereby joining the tantalum clad steel sections. The invention is also directed to tantalum welds or joints formed by cold spraying tantalum powder.
摘要:
The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppmf in an inert atmosphere at a pressure of from 1 bar to 10−7 to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.
摘要:
The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppmf in an inert atmosphere at a pressure of from 1 bar to 10−7 to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.
摘要:
The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppm, in an inert atmosphere at a pressure of from 1 bar to 10−7 to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.
摘要:
In various embodiments, protective layers are bonded to a steel layer, overlapped, and at least partially covered by a layer of unmelted metal powder produced by cold spray.
摘要:
In various embodiments, protective layers are bonded to a steel layer, overlapped, and at least partially covered by a layer of unmelted metal powder produced by cold spray.
摘要:
In various embodiments, used sputtering targets are refurbished at least in part by maintaining a large obliquity angle between the spray-deposition gun and the depressed surface contour of the target during spray deposition of the target material.
摘要:
An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.
摘要:
An apparatus, system and method for viewing an industrial process in an obscuring environment, such as molten metal atomization, is disclosed. An enclosure defining a chamber for containing a particulate form from atomized liquid metal has a nozzle for atomizing liquid metal mounted thereon in communication with the chamber whereby particles recirculate throughout the chamber. The nozzle being comprised of a cylindrical plenum means and a melt guide tube extending axially therethrough to an exit orifice. The plenum means is configured to provide a jet of atomizing gas converging in an atomizing zone extending from the exit orifice. A viewing means extends through the enclosure to a viewing orifice adjacent the atomization zone, the viewing means being configured to extend a field of view through the chamber to the atomization zone. A purging gas flow is provided in the viewing means to minimize atomized particles from contacting the window, and an image of the atomization zone is generated by viewing through the window.
摘要:
An integrated card programming device for programing an integrated circuit card. The integrated circuit card programing device has a base, a card input platform, and a transport. The transport is operably connected to the base and rotatably mounted about a rotational axis. The transport includes a transport arm radially disposed about the rotational axis. A card picker carriage is mounted on the transport arm. The card picker carriage has two picker arms. One or more personalization stations for programming an integrated circuit card are radially disposed about the transport. The personalization stations can program the cards to the French or ISO standards and are rotatable 180.degree..