公开(公告)号：US11948702B2

公开(公告)日：2024-04-02

申请号：US18312991

申请日：2023-05-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Chung Tu ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G21K1/06 ,  G02B5/08 ,  G02B5/10 ,  G03F7/00 ,  H05G2/00

CPC classification number: G21K1/06 ,  G02B5/0808 ,  G02B5/0891 ,  G02B5/10 ,  G03F7/70025 ,  G03F7/70033 ,  H05G2/008

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

公开(公告)号：US11852978B2

公开(公告)日：2023-12-26

申请号：US17805695

申请日：2022-06-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tai-Yu Chen ,  Tzu-Jung Pan ,  Kuan-Hung Chen ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70091

Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.

公开(公告)号：US11841625B2

公开(公告)日：2023-12-12

申请号：US17548016

申请日：2021-12-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Han Lin ,  Chieh Hsieh ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Heng-Hsin Liu ,  Li-Jui Chen

IPC: G03F7/20 ,  H05G2/00 ,  G03F7/00

CPC classification number: G03F7/70916 ,  G03F7/70033 ,  H05G2/008

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

公开(公告)号：US11822256B2

公开(公告)日：2023-11-21

申请号：US17446254

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kai-Chieh Chang ,  Kai-Fa Ho ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70741 ,  G03F7/70033 ,  G03F7/70633 ,  G03F7/70875 ,  G03F7/70891

Abstract: A reticle is pre-heated prior to an exposure operation of a semiconductor substrate lot to reduce substrate to substrate temperature variations of the reticle in the exposure operation. The reticle may be pre-heated while being stored in a reticle storage slot, while being transferred from the reticle storage slot to a reticle stage of an exposure tool, and/or in another location prior to being secured to the reticle stage for the exposure operation. In this way, the reduction in temperature variation of the reticle in the exposure operation provided by pre-heating the reticle may reduce overlay deltas and misalignment for the semiconductor substrates that are processed in the exposure operation. This increases overlay performance, increases yield of the exposure tool, and increases semiconductor device quality. Moreover, pre-heating the reticle prior to securing the reticle to the reticle stage for the exposure operation reduces and/or minimizes the impact that the pre-heating has on throughput and processing times of the exposure tool.

公开(公告)号：US11747735B2

公开(公告)日：2023-09-05

申请号：US17462695

申请日：2021-08-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Che-Chang Hsu ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: H05G2/00 ,  G03F7/20 ,  G03F7/00 ,  G21K1/06 ,  G06T7/00 ,  G06T1/00

CPC classification number: G03F7/70033 ,  G06T1/0014 ,  G06T7/0004 ,  G21K1/06 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008 ,  G06T2207/30148

Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

公开(公告)号：US11694820B2

公开(公告)日：2023-07-04

申请号：US17407291

申请日：2021-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Chung Tu ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G21K1/06 ,  G02B5/08 ,  G02B5/10 ,  G03F7/20 ,  H05G2/00 ,  G03F7/00

CPC classification number: G21K1/06 ,  G02B5/0808 ,  G02B5/0891 ,  G02B5/10 ,  G03F7/70025 ,  G03F7/70033 ,  H05G2/008

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, and a reflective mirror. The vessel has an exit aperture. The laser source is at one end of the vessel and configured to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The reflective mirror is in the vessel and configured to reflect the laser beam toward an edge of the vessel.

公开(公告)号：US11556065B2

公开(公告)日：2023-01-17

申请号：US17468432

申请日：2021-09-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yu-Huan Chen ,  Yu-Chih Huang ,  Ya-An Peng ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20

Abstract: A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.

公开(公告)号：US20220334496A1

公开(公告)日：2022-10-20

申请号：US17856651

申请日：2022-07-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Cheng-Hsuan Wu ,  Ming-Hsun Tsai ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20

Abstract: A particle removal device, along with methods of using such, are described. The device includes a handheld module having a body. A first one or more channels and a second one or more channels are formed in the body. The body includes a nozzle, and the handheld module is configured to provide suction by the nozzle and to inject an ionized fluid stream by the nozzle. The body further includes a handle attached to the nozzle.

公开(公告)号：US11153957B2

公开(公告)日：2021-10-19

申请号：US16505156

申请日：2019-07-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tzu Jeng Hsu ,  Chi-Ming Yang ,  Chyi Shyuan Chern ,  Jui-Chun Peng ,  Heng-Hsin Liu ,  Chin-Hsiang Lin

IPC: H05G2/00

Abstract: An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.

公开(公告)号：US10514247B2

公开(公告)日：2019-12-24

申请号：US15864458

申请日：2018-01-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Hsiang Tseng ,  Chin-Hsiang Lin ,  Heng-Hsin Liu ,  Jui-Chun Peng ,  Ho-Ping Chen

IPC: G01B11/02 ,  G03F9/00 ,  H01L23/544

Abstract: A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide a light directed to the wafer. The light detection device is configured to detect reflected light intensity from the wafer to locate at least one wafer alignment mark of wafer alignment marks separated by a plurality of angles. At least two of those angles are equal.