公开(公告)号：US20220343959A1

公开(公告)日：2022-10-27

申请号：US17420474

申请日：2020-03-05

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic recording array includes a plurality of units. Each unit has a first magnetoresistance effect element, second magnetoresistance effect element, and writing transistor. Each of the first magnetoresistance effect element and the second magnetoresistance effect element has a wiring and a laminate which is laminated on the wiring. The writing transistor is connected to each of the wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element. The wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element are electrically connected in series at the time of writing, and a writing current flows through each of the wirings. A direction of a writing current flowing in the wiring of the first magnetoresistance effect element and a direction of a writing current flowing in the wiring of the second magnetoresistance effect element are opposite to each other.

公开(公告)号：US20220140231A1

公开(公告)日：2022-05-05

申请号：US17578625

申请日：2022-01-19

Applicant: TDK CORPORATION

Inventor： Keita SUDA ,  Tomoyuki SASAKI

IPC: H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02

Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

公开(公告)号：US20210375682A1

公开(公告)日：2021-12-02

申请号：US17405834

申请日：2021-08-18

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Tomomi KAWANO ,  Minoru SANUKI

IPC: H01L21/8239 ,  G11C11/16 ,  G11C11/18 ,  H01F10/32 ,  H01L27/105 ,  H01L29/82 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10

Abstract: This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated.

公开(公告)号：US20210364580A1

公开(公告)日：2021-11-25

申请号：US16475478

申请日：2018-12-25

Applicant: TDK CORPORATION

Inventor： Atsushi TSUMITA ,  Tomoyuki SASAKI

IPC: G01R33/09 ,  G11C11/16 ,  H01L43/10 ,  H01L43/04 ,  H01L43/08 ,  H01L27/22

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

公开(公告)号：US20210184106A1

公开(公告)日：2021-06-17

申请号：US17184206

申请日：2021-02-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L43/08 ,  H03B15/00 ,  G11B5/39 ,  H01L29/82 ,  H01L27/105 ,  H01F10/32 ,  G11C11/18 ,  G11C11/16 ,  H01L43/04 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09

Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

公开(公告)号：US20210043831A1

公开(公告)日：2021-02-11

申请号：US17077165

申请日：2020-10-22

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

公开(公告)号：US20200321518A1

公开(公告)日：2020-10-08

申请号：US16956802

申请日：2019-02-26

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/10

Abstract: A ferromagnetic laminated film includes a plurality of first magnetic layers, at least one second magnetic layer, and at least one first non-magnetic layer, in which the first magnetic layers are alternately laminated with the second magnetic layer or the first non-magnetic layer, and a material forming the first magnetic layers is different from a material forming the second magnetic layer, and the first magnetic layers, the first non-magnetic layer, and the second magnetic layer are a material combination in which interface magnetic anisotropy is generated between the first magnetic layer and the first non-magnetic layer, and a material combination in which interface magnetic anisotropy is generated between the first magnetic layer and the second magnetic layer.

公开(公告)号：US20200219532A1

公开(公告)日：2020-07-09

申请号：US16819373

申请日：2020-03-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

公开(公告)号：US20200035911A1

公开(公告)日：2020-01-30

申请号：US16574221

申请日：2019-09-18

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L43/06 ,  H03B15/00 ,  G11B5/39 ,  H01L29/82 ,  H01L27/105 ,  H01F10/32 ,  G11C11/18 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09

Abstract: This spin current magnetization rotational element includes a second ferromagnetic metal layer 1 having a variable magnetization orientation, and spin-orbit torque wiring 2, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer 1, and is connected to the second ferromagnetic metal layer 1, wherein the spin resistance of a connection portion of the spin-orbit torque wiring layer 2 that is connected to the second ferromagnetic metal layer 1 is larger than the spin resistance of the second ferromagnetic metal layer 1.

公开(公告)号：US20200006642A1

公开(公告)日：2020-01-02

申请号：US16451791

申请日：2019-06-25

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01L43/10 ,  G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  G11B5/39 ,  H01L27/22

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.