公开(公告)号：US20190007023A1

公开(公告)日：2019-01-03

申请号：US15639478

申请日：2017-06-30

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen

IPC: H03H9/02 ,  H03H9/00

Abstract: Acoustic wave resonators having Fresnel features are disclosed. An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

公开(公告)号：US20240421120A1

公开(公告)日：2024-12-19

申请号：US18816640

申请日：2024-08-27

Applicant: Texas Instruments Incorporated

Inventor： Anindya Poddar ,  Mahmud Chowdhury ,  Hau Nguyen ,  Masamitsu Matsuura ,  Ting-Ta Yen

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

Abstract: A method includes forming a stress sensitive component on a first semiconductor die; forming a solder seal on the first semiconductor die, the solder seal extending from a first surface of the first semiconductor die, and surrounding the stress sensitive component, the solder seal having an interior surface that surrounds the stress sensitive component and having an exterior surface facing away from the stress sensitive component; flip chip mounting the first semiconductor die to a first surface of a second semiconductor die, the stress sensitive component facing the first surface of the second semiconductor die; and forming a solder joint between the solder seal and the first surface of the second semiconductor die.

公开(公告)号：US20240364335A1

公开(公告)日：2024-10-31

申请号：US18308491

申请日：2023-04-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gokhan Ariturk ,  Adam Fruehling ,  Ting-Ta Yen

IPC: H03K17/693 ,  H03K17/10 ,  H03K17/687

CPC classification number: H03K17/693 ,  H03K17/102 ,  H03K17/6871

Abstract: An apparatus includes a switch assembly having first and second switch terminals and a control terminal. The switch assembly includes a leakage attenuation circuit. The switch assembly is configured to, responsive to the control terminal having a first state, connect the first switch terminal to the second switch terminal and disconnect a circuit terminal of the leakage attenuation circuit from the first switch terminal. The switch assembly is configured to, responsive to the control terminal having a second state, connect the terminal of the leakage attenuation circuit to the first switch terminal and disconnect the first switch terminal from the second switch terminal.

公开(公告)号：US12119803B2

公开(公告)日：2024-10-15

申请号：US18449098

申请日：2023-08-14

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/0211 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02157 ,  H03H2003/021 ,  H03H2003/025 ,  H03H9/02047 ,  H03H9/172

Abstract: In one example, a method of forming a bulk acoustic wave (BAW) resonator comprises: forming an electrode on at least one of a semiconductor substrate, a sacrificial layer, or an acoustic reflector; and forming a piezoelectric layer on the electrode, the piezoelectric layer having a convex surface.

公开(公告)号：US12074134B2

公开(公告)日：2024-08-27

申请号：US17364769

申请日：2021-06-30

Applicant: Texas Instruments Incorporated

Inventor： Anindya Poddar ,  Mahmud Chowdhury ,  Hau Nguyen ,  Masamitsu Matsuura ,  Ting-Ta Yen

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L24/94 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L24/95 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11849 ,  H01L2224/16146 ,  H01L2225/06513 ,  H01L2924/182

Abstract: In a described example, an apparatus includes: a first semiconductor die with a component on a first surface; a second semiconductor die mounted on a package substrate and having a third surface facing away from the package substrate; a solder seal bonded to and extending from the first surface of the first semiconductor die flip chip mounted to the third surface of the second semiconductor die, the solder seal at least partially surrounding the stress sensitive component; a first solder joint formed between the solder seal and the third surface of the second semiconductor die; a second solder joint formed between solder at an end of the post connect and the third surface of the second semiconductor die; and a mold compound covering the second surface of the first semiconductor die, a portion of the second semiconductor die, and an outside periphery of the solder seal.

公开(公告)号：US20240213957A1

公开(公告)日：2024-06-27

申请号：US18145497

申请日：2022-12-22

Applicant: Texas Instruments Incorporated

Inventor： Yao Yu ,  Hassan Omar Ali ,  Ting-Ta Yen ,  Swaminathan Sankaran

IPC: H03H9/54 ,  H03H7/42 ,  H03H9/00 ,  H03H9/02

CPC classification number: H03H9/542 ,  H03H7/42 ,  H03H9/0095 ,  H03H9/02133

Abstract: In one example, an integrated circuit comprises a filter having first and second filter terminals. The filter includes a first inductor coupled between the first and second filter terminals. The filter further includes a resonator coupled between the first and second filter terminals. A second inductor is coupled between differential terminals and is magnetically coupled to the first inductor.

公开(公告)号：US20230396229A1

公开(公告)日：2023-12-07

申请号：US18449098

申请日：2023-08-14

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen

IPC: H03H9/02 ,  H03H3/02

CPC classification number: H03H9/0211 ,  H03H9/02015 ,  H03H3/02 ,  H03H9/02157 ,  H03H9/172

Abstract: In one example, a method of forming a bulk acoustic wave (BAW) resonator comprises: forming an electrode on at least one of a semiconductor substrate, a sacrificial layer, or an acoustic reflector; and forming a piezoelectric layer on the electrode, the piezoelectric layer having a convex surface.

公开(公告)号：US20230006635A1

公开(公告)日：2023-01-05

申请号：US17364214

申请日：2021-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Huiyao Chen ,  Ting-Ta Yen ,  Ricky A. Jackson ,  Martin Keegan

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02 ,  H03H3/08

Abstract: An integrated circuit (IC) resonator module for an IC package includes an acoustic resonator having a surface and a Bragg reflector adhered to the surface of the acoustic resonator. The Bragg reflector includes low impedance layers formed of a first material with a first acoustic impedance and a high impedance layer formed of a second material with a second acoustic impedance. The second acoustic impedance is greater than the first acoustic impedance. The Bragg reflector further includes a Bragg grating layer formed of randomly or periodically spaced patches of the second material separated by vias filled with the first material.

公开(公告)号：US11418166B2

公开(公告)日：2022-08-16

申请号：US16806581

申请日：2020-03-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ting-Ta Yen

IPC: H03H9/02 ,  H03H9/25 ,  H03H9/00 ,  H03H9/13

Abstract: An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

公开(公告)号：US10855251B2

公开(公告)日：2020-12-01

申请号：US15671996

申请日：2017-08-08

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen

IPC: H03H9/25 ,  H01L41/18 ,  H03H9/05 ,  H03H9/02 ,  H03H9/17

Abstract: Unreleased plane acoustic wave (PAW) resonators are disclosed. An example unreleased PAW resonator includes a substrate, a first acoustic reflector disposed on the substrate, and a piezoelectric layer disposed on the first acoustic reflector, wherein the first acoustic reflector and the piezoelectric layer are unreleased from the substrate.