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公开(公告)号：US20230006635A1
公开(公告)日：2023-01-05
申请号：US17364214
申请日：2021-06-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Huiyao Chen , Ting-Ta Yen , Ricky A. Jackson , Martin Keegan
Abstract: An integrated circuit (IC) resonator module for an IC package includes an acoustic resonator having a surface and a Bragg reflector adhered to the surface of the acoustic resonator. The Bragg reflector includes low impedance layers formed of a first material with a first acoustic impedance and a high impedance layer formed of a second material with a second acoustic impedance. The second acoustic impedance is greater than the first acoustic impedance. The Bragg reflector further includes a Bragg grating layer formed of randomly or periodically spaced patches of the second material separated by vias filled with the first material.
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公开(公告)号：US20150378064A1
公开(公告)日：2015-12-31
申请号：US14553812
申请日：2014-11-25
Applicant: Texas Instruments Incorporated
Inventor： YungShan Chang , Ricky A. Jackson
CPC classification number: B81B7/0029 , G02B1/14 , G02B26/0875
Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a bottom surface and a top surface. The device may also include an upper moisture barrier layer having a top surface and a bottom surface in which the bottom surface of the top moisture barrier layer is substantially coextensive with and interfaces with the top surface of the glass layer. A piezo stack may be attached above the upper moisture barrier layer. The device may also include a lower moisture barrier layer having a bottom surface and a top surface. The top surface of the lower moisture barrier layer is substantially coextensive with and interfaces with the bottom surface of the glass layer. A semiconductor substrate may be attached below the bottom moisture barrier layer.
Abstract translation: 压电光电微机电系统（POMEMS）装置包括具有底表面和顶表面的玻璃层。 该装置还可以包括具有顶表面和底表面的上部防潮层，其中顶部防潮层的底表面基本上与玻璃层的顶表面共同延伸并与其接合。 压电叠层可以附着在上部防潮层上。 该装置还可以包括具有底表面和顶表面的下部防潮层。 下部防潮层的上表面与玻璃层的底面基本上共同延伸并与其接触。 半导体衬底可以附着在底部阻湿层的下方。
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公开(公告)号：US20240102830A1
公开(公告)日：2024-03-28
申请号：US18147396
申请日：2022-12-28
Applicant: Texas Instruments Incorporated
Inventor： Fuchao Wang , William French , Ricky A. Jackson , Erika Mazotti
CPC classification number: G01D5/16 , G01D5/18 , G01R33/096
Abstract: Barrier layers for anisotropic magneto-resistive (AMR) sensors integrated with semiconductor circuits and methods of making the same are described. The AMR sensors includes a NiFe alloy layer disposed over a dielectric layer. The NiFe alloy layer is in contact with a conductive via coupled to the semiconductor circuits in a substrate underneath the AMR sensor. A barrier layer is formed on the dielectric layer to prevent Ni or Fe atoms from diffusing through the dielectric layer toward the semiconductor circuits. Further, a sacrificial layer is used to facilitate forming a planarized surface with ends of the conductive vias exposed without compromising the barrier layer.
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公开(公告)号：US10186623B2
公开(公告)日：2019-01-22
申请号：US15017057
申请日：2016-02-05
Applicant: Texas Instruments Incorporated
Inventor： Debarshi Basu , Henry Litzmann Edwards , Ricky A. Jackson , Marco A. Gardner
IPC: H01L31/0232 , H01L31/02 , H01L25/16 , G01J1/02 , H01L31/103
Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.
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公开(公告)号：US09793106B2
公开(公告)日：2017-10-17
申请号：US14931822
申请日：2015-11-03
Applicant: Texas Instruments Incorporated
Inventor： Honglin Guo , Tim A. Taylor , Jeff A. West , Ricky A. Jackson , Byron Williams
CPC classification number: H01L21/02118 , H01G4/14 , H01G4/18 , H01G4/224 , H01G4/236 , H01G4/33 , H01L21/02164 , H01L21/02178 , H01L21/0228 , H01L23/3121 , H01L23/3135 , H01L23/3192 , H01L23/564 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L28/40 , H01L51/00 , H01L2224/02166 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/04042 , H01L2224/05567 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L2224/94 , H01L2924/00014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/03 , H01L2924/014 , H01L2224/45099
Abstract: It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.
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Patent Agency Ranking
公开(公告)号：US11387782B2
公开(公告)日：2022-07-12
申请号：US17142573
申请日：2021-01-06
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Ricky A. Jackson , Kurt Peter Wachtler
IPC: H03B5/32 , H03H9/17 , H01L41/25 , H03H9/05 , H01L23/00 , H01L41/047 , H01L23/495 , H01L41/053 , H01L23/31 , H01L25/16 , H01L21/78 , H01L21/56
Abstract: A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.
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公开(公告)号：US11148939B2
公开(公告)日：2021-10-19
申请号：US15890781
申请日：2018-02-07
Applicant: Texas Instruments Incorporated
Inventor： YungShan Chang , Ricky A. Jackson , Jeff W. Ritchison , Neng Jiang
Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.
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公开(公告)号：US10892712B2
公开(公告)日：2021-01-12
申请号：US16747679
申请日：2020-01-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Ricky A. Jackson , Kurt Peter Wachtler
IPC: H03B5/32 , H03H9/17 , H01L41/25 , H03H9/05 , H01L23/00 , H01L41/047 , H01L23/495 , H01L41/053 , H01L23/31 , H01L25/16 , H01L21/78 , H01L21/56
Abstract: A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.
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公开(公告)号：US20180179054A1
公开(公告)日：2018-06-28
申请号：US15890781
申请日：2018-02-07
Applicant: Texas Instruments Incorporated
Inventor： YungShan Chang , Ricky A. Jackson , Jeff W. Ritchison , Neng Jiang
CPC classification number: B81C1/00523 , B81B3/0021 , B81B3/0072 , B81B7/02 , B81B2201/047 , B81C1/00349 , B81C2201/0174 , G02B13/14 , G02B26/06
Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.
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公开(公告)号：US20180141804A1
公开(公告)日：2018-05-24
申请号：US15802706
申请日：2017-11-03
Applicant: Texas Instruments Incorporated
Inventor： YungShan Chang , Ricky A. Jackson
CPC classification number: B81B7/0029 , G02B1/14 , G02B26/0875
Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a first surface and an opposite second surface. The device may also include a first moisture barrier layer having a first surface and an opposite second surface in which the second surface of the first moisture barrier layer is substantially coextensive with and interfaces with the first surface of the glass layer. A piezo stack may be attached on the first side of the first moisture barrier layer. The device may also include a second moisture barrier layer having a first surface and an opposite second surface. The first surface of the second moisture barrier is substantially coextensive with and interfaces with the second surface of the glass layer. A semiconductor substrate may be attached on the second side of the second moisture barrier layer.
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