Amorphous carbon film, process for forming amorphous carbon film, conductive member provided with amorphous carbon film, and fuel cell separator
    32.
    发明授权
    Amorphous carbon film, process for forming amorphous carbon film, conductive member provided with amorphous carbon film, and fuel cell separator 有权
    无定形碳膜,无定形碳膜的形成方法,具有无定形碳膜的导电部件和燃料电池分离器

    公开(公告)号:US08119242B2

    公开(公告)日:2012-02-21

    申请号:US12300179

    申请日:2007-05-22

    IPC分类号: B32B9/00

    摘要: The amorphous carbon film of the present invention is an amorphous carbon film comprising carbon and hydrogen, wherein the amorphous carbon film contains not more than 30 atomic % (excluding 0%) of hydrogen and, when the entire amount of the carbon is taken as 100 atomic %, carbon having an sp2 hybrid orbital is present in an amount of not less than 70 atomic % and less than 100 atomic %. Conductivity is imparted to an amorphous carbon film by controlling the contents of hydrogen, Csp3 and the like to increase a structure comprising Csp2. This amorphous carbon film can be formed by plasma CVD using a reaction gas containing one or more gases selected from a carbocyclic compound gas containing carbon having an sp2 hybrid orbital, and a heterocyclic compound gas containing carbon having an sp2 hybrid orbital and silicon and/or nitrogen. By forming the amorphous carbon film on a surface of a substrate, a conductive member can be obtained.

    摘要翻译: 本发明的无定形碳膜是含有碳和氢的无定形碳膜,其中无定形碳膜含有不超过30原子%(不包括0%)的氢,当碳的总量为100时 原子%,具有sp2混合轨道的碳以不小于70原子%且小于100原子%的量存在。 通过控制氢,Csp3等的含量来增加包含Csp2的结构,赋予无定形碳膜的电导率。 该无定形碳膜可以通过使用含有一种或多种气体的反应气体等离子体CVD形成,所述气体选自含有sp2混合轨道的碳的碳环化合物气体和含有sp2混合轨道和硅的碳的杂环化合物气体和/或 氮。 通过在基板的表面上形成非晶碳膜,可以获得导电部件。

    Particle counting method and particle counter
    33.
    发明授权
    Particle counting method and particle counter 失效
    粒子计数法和粒子计数器

    公开(公告)号:US07145320B2

    公开(公告)日:2006-12-05

    申请号:US10762308

    申请日:2004-01-23

    IPC分类号: G01N27/00 G01N27/62

    CPC分类号: G01N15/0656

    摘要: A particle counter counts particles in aerosol having a particle size of from 2 nm to 50 nm in an operating pressure range from an atmospheric pressure through a reduced pressure to a low vacuum and calculate a particle size distribution. The particle counter charges particles in the aerosol and applies an electrostatic field thereto, and mixes the aerosol with a non-charged sheath gas flow shaped like a laminar flow whereby the respective particles separate into traces depending on their particle size where they can be counted. Further, by using an electron multiplier for exciting cluster ions to detect the charged particles and operating it as a high-pass filter, even if the number density of the particles is small, it is possible to effectively count the particles.

    摘要翻译: 颗粒计数器在从大气压至减压至低真空的操作压力范围内,计算粒径为2nm至50nm的气溶胶中的颗粒,并计算出粒度分布。 颗粒计数器对气溶胶中的颗粒进行充电并对其施加静电场,并将气溶胶与形成为层流的非充电鞘气流混合,由此各个颗粒根据颗粒尺寸分离成痕迹,在那里它们可以被计数。 此外,通过使用电子倍增器激发簇离子来检测带电粒子并将其作为高通滤波器进行操作,即使粒子的数量密度小,也可以有效地计数粒子。

    High-purity standard particle production apparatus, method and particles
    35.
    发明授权
    High-purity standard particle production apparatus, method and particles 失效
    高纯度标准颗粒生产设备,方法和颗粒

    公开(公告)号:US06814239B2

    公开(公告)日:2004-11-09

    申请号:US10076070

    申请日:2002-02-15

    IPC分类号: B07B100

    摘要: An apparatus for producing high-purity standard particles produces nanometer-sized high-purity standard particles of monodispersive uniform structure efficiently, with the abatement of contamination and damage. The apparatus includes a particle generation chamber, a particle classification chamber and a particle collecting chamber. The particle generation chamber excites a semiconductor target with pulse laser beam under a low-pressure rare gas ambient so as to detach and eject materials from the target into the ambient gas, in which those materials are condensed and grow into high-purity particles. The particle classification chamber subjects the high-purity particles as generated to classification, and the particles collecting chamber collects high-purity standard particles as classified onto a substrate.

    Optoelectronic material, device using the same and method for manufacturing optoelectronic material
    36.
    发明授权
    Optoelectronic material, device using the same and method for manufacturing optoelectronic material 有权
    光电子材料,使用相同的器件和制造光电子材料的方法

    公开(公告)号:US06730934B2

    公开(公告)日:2004-05-04

    申请号:US09725486

    申请日:2000-11-30

    IPC分类号: H01L2715

    摘要: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.

    摘要翻译: 本发明涉及包含具有可控电特性的均匀介质的光电子材料; 和分散在介质中并且具有100nm以下的平均粒径的半导体超细颗粒,以及使用其的涂布装置。 本发明还涉及一种通过将激光束照射到放置在低压稀有气体环境中的反应室中的半导体材料的第一靶上,以及具有可控电的介质材料的第二靶材来制造光电子材料的方法 特性,放置在反应室中,冷凝/生长从放置在反应室中的基板上平均粒度为100nm以下的超微粒子作为被收集的第一靶材烧蚀的半导体材料,并冷凝/生长介质 从放置在反应室内的基板上收集的第二靶材烧蚀掉的材料,由此形成分散在基板上的介质中的具有半导体超微粒子的超微粒子分散层。

    Depositing method and a surface modifying method for nano-particles in a gas stream
    37.
    发明授权
    Depositing method and a surface modifying method for nano-particles in a gas stream 有权
    在气流中的纳米颗粒的沉积方法和表面改性方法

    公开(公告)号:US06562417B2

    公开(公告)日:2003-05-13

    申请号:US10180054

    申请日:2002-06-27

    IPC分类号: B05D306

    摘要: A method of depositing nano-particles in a gas stream for efficiently depositing nano-particles by irradiating an electron beam on charged nano-particles in the stream of a first gas species containing the nano-particles, as well as a method of modifying the surface of the nano-particles in a gas stream by mixing them with the first gas species in a gas mixing chamber thereby activating the second gas species, intended for providing a method of depositing nano-particles and a method of modifying the surface thereof in a gas stream, capable of efficiently depositing the nano-particles in a charged state in a gas stream and modifying the surface of the nano-particles which are extremely sensitive to defects and impurities caused by large exposure ratio of surface atoms in a gas stream at a good controllability.

    摘要翻译: 一种通过在含有纳米颗粒的第一气体物流中的电荷束照射电子束以有效地沉积纳米颗粒的气流中沉积纳米颗粒的方法,以及改变表面的方法 通过将其与气体混合室中的第一气体物质混合,从而激活第二气体物质,旨在提供沉积纳米颗粒的方法和在气体中改性其表面的方法,将气体流中的纳米颗粒 流,能够在气流中有效地将纳米颗粒沉积为带电状态,并且改变对由良好的气流中的表面原子的大的暴露比导致的缺陷和杂质极度敏感的纳米颗粒的表面 可控性。

    Optoelectronic material, device using the same, and method for manufacturing optoelectronic material
    38.
    发明授权
    Optoelectronic material, device using the same, and method for manufacturing optoelectronic material 失效
    光电材料,使用其的器件以及制造光电子材料的方法

    公开(公告)号:US06239453B1

    公开(公告)日:2001-05-29

    申请号:US09011471

    申请日:1998-02-18

    IPC分类号: H01L21203

    摘要: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.

    摘要翻译: 本发明涉及包含具有可控电特性的均匀介质的光电子材料; 和分散在介质中并且具有100nm以下的平均粒径的半导体超细颗粒,以及使用其的涂布装置。 本发明还涉及一种通过将激光束照射到放置在低压稀有气体环境中的反应室中的半导体材料的第一靶上,以及具有可控电的介质材料的第二靶材来制造光电子材料的方法 特性,放置在反应室中,冷凝/生长从放置在反应室中的基板上平均粒度为100nm以下的超微粒子作为被收集的第一靶材烧蚀的半导体材料,并冷凝/生长介质 从放置在反应室内的基板上收集的第二靶材烧蚀掉的材料,由此形成分散在基板上的介质中的具有半导体超微粒子的超微粒子分散层。

    Method of spreading particles and spreading apparatus
    39.
    发明授权
    Method of spreading particles and spreading apparatus 失效
    撒布装置的方法

    公开(公告)号:US5814368A

    公开(公告)日:1998-09-29

    申请号:US806637

    申请日:1997-02-26

    摘要: The present invention is a method for spreading spacing particles on a surface of a substrate used to form a liquid crystal display panel. The method comprises the steps of relatively moving the substrate and a spreading nozzle with respect to one another as the spreading nozzle spread the spacing particles such that the spacing particles spread from the spreading nozzle trace a predetermined trace on the surface of the substrate. Electric charge on the substrate is discharged while relatively moving the substrate and the spreading nozzle such that the spreading nozzle spreads the spacing particles on a discharged portion of the surface of the substrate.

    摘要翻译: 本发明是用于在用于形成液晶显示面板的基板的表面上扩展间隔颗粒的方法。 该方法包括以下步骤:当扩散喷嘴扩展间隔颗粒使得从扩散喷嘴扩散的间隔颗粒在基板的表面上追踪预定的迹线时,相对于彼此相对移动基板和扩展喷嘴。 在使基板和扩散喷嘴相对移动的同时排出基板上的电荷,使得扩展喷嘴将间隔颗粒扩散到基板的表面的排出部分上。

    Method and apparatus for forming film
    40.
    发明授权
    Method and apparatus for forming film 有权
    薄膜成膜方法及装置

    公开(公告)号:US08652587B2

    公开(公告)日:2014-02-18

    申请号:US13046208

    申请日:2011-03-11

    IPC分类号: H05H1/24

    摘要: This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate.

    摘要翻译: 本发明采用等离子体增强化学气相沉积法,该装置包括一个室,一对旋转电极卷轴,包括一个送出卷轴和一个卷取卷轴,等离子体源,原料气体供应器和排气单元,以及 包括在从所述送出卷轴送出导电性基板并卷绕在所述卷取卷轴上时,施加从所述等离子体源施加到所述旋转电极卷轴上的负电压,使得所述基板部分在卷盘接触之间的整个表面 材料气体,由此在卷轴之间沿着基板部分的表面形成等离子体护套,并且材料气体在等离子体护套中被激活,并且因此接触基板的表面,从而在基板的表面上形成膜。