Method for manufacturing semiconductor device
    32.
    发明申请
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US20070117395A1

    公开(公告)日:2007-05-24

    申请号:US11602180

    申请日:2006-11-21

    IPC分类号: H01L21/311

    摘要: A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.

    摘要翻译: 本发明的半导体器件的制造方法包括:在硅衬底上依次形成第一膜,第二膜和第三膜; 通过使用包括移相器的曝光掩模对抗蚀剂膜进行曝光和显影处理来对形成在第三膜上的抗蚀剂膜图案化; 通过使用第二膜的抗蚀剂膜的掩模来选择性地干蚀刻第三膜作为蚀刻停止,以将第三膜处理成第一图案; 使用第二膜进一步干蚀刻第三膜作为蚀刻停止部分地去除第三膜,从而将第三膜处理成第二图案; 使用具有第二图案的第三膜作为掩模来图案化第二膜; 以及使用图案化的第二膜作为掩模对第一膜进行构图。

    Polyester film for imaging media
    33.
    发明授权
    Polyester film for imaging media 有权
    用于成像介质的聚酯薄膜

    公开(公告)号:US06485818B2

    公开(公告)日:2002-11-26

    申请号:US09299441

    申请日:1999-04-26

    申请人: Masato Fujita

    发明人: Masato Fujita

    IPC分类号: B32B2708

    摘要: The present invention relates to a primer coated polyester film for imaging media which has a thickness of 40 to 200 &mgr;m, a haze of not more than 5%, and comprises a biaxially oriented polyester film support and at least one priming layer laminated on the support and oriented at least monoaxially. The priming layer is formed from a coating solution containing a water-soluble resin (A) having vinyl alcohol units as a main constituent and a water-soluble or water-despersible resin (B) having an aromatic polyester unit.

    摘要翻译: 本发明涉及厚度为40〜200μm,雾度不超过5%的成像介质的底漆涂布聚酯膜,并且包括双轴取向的聚酯膜载体和层叠在载体上的至少一个起泡层 并至少单向取向。 起泡层由含有乙烯醇单元作为主要成分的水溶性树脂(A)和具有芳族聚酯单元的水溶性或水分散性树脂(B)的涂布溶液形成。

    Method of encapsulating organic electroluminescence device and organic
electroluminescence device
    34.
    发明授权
    Method of encapsulating organic electroluminescence device and organic electroluminescence device 失效
    封装有机电致发光器件和有机电致发光器件的方法

    公开(公告)号:US5962962A

    公开(公告)日:1999-10-05

    申请号:US793932

    申请日:1997-03-05

    IPC分类号: H01L51/52 H05B33/04

    摘要: A method of encapsulation for an organic EL device, which overcomes the difficulty of conventional methods by fully preventing the growth of dark spots in the organic EL device by providing an inert liquid layer having a dissolved oxygen concentration of 1 ppm or less on the periphery of the organic EL device.

    摘要翻译: PCT No.PCT / JP95 / 01764 Sec。 371日期1997年3月5日 102(e)1997年3月5日PCT PCT 1995年9月5日PCT公布。 公开号WO96 / 08122 日期1996年3月14日一种有机EL器件的封装方法,通过提供溶解氧浓度为1ppm的惰性液体层,通过充分防止有机EL器件中的黑点生长,克服了传统方法的困难, 较少在有机EL器件的外围。

    Both surfaces-laminated polyester film
    36.
    发明授权
    Both surfaces-laminated polyester film 有权
    两面均匀聚酯薄膜

    公开(公告)号:US08614002B2

    公开(公告)日:2013-12-24

    申请号:US13496573

    申请日:2010-09-16

    IPC分类号: B32B27/40

    摘要: The present invention provides a both surfaces-laminated polyester film having a coating layer excellent in easy adhesion property to a hard coat layer and another coating layer having an ability of preventing precipitation of oligomer.A both surfaces-laminated polyester film comprising: a polyester film, a first coating layer which is formed on one surface of said polyester film and comprises a polymer containing ammonium base, an acrylate polymer containing polyethylene glycol and a crosslinking agent, and a second coating layer which is formed on another surface of said polyester film and comprises a polyurethane resin and a crosslinking agent.

    摘要翻译: 本发明提供一种具有易于与硬涂层粘附性优异的涂布层和具有防止低聚物沉淀的能力的涂层的两面层叠聚酯膜。 一种双面层压聚酯薄膜,包括:聚酯薄膜,形成在所述聚酯薄膜的一个表面上的第一涂层,包含含有铵基的聚合物,含有聚乙二醇的丙烯酸酯聚合物和交联剂,以及第二涂层 层,其形成在所述聚酯膜的另一表面上,并且包含聚氨酯树脂和交联剂。

    EASY-ADHESIVE FILM
    38.
    发明申请
    EASY-ADHESIVE FILM 审中-公开
    易粘胶膜

    公开(公告)号:US20110045288A1

    公开(公告)日:2011-02-24

    申请号:US12922754

    申请日:2009-02-26

    IPC分类号: B32B27/36 C09J7/02

    摘要: The present invention relates to a polyester film having an excellent easy-adhesive property to a topcoat agent which can be suitably used in the applications in which a good adhesion to the topcoat agent is required. There is provided an easy-adhesive film comprising a polyester film and a coating layer formed on the polyester film by a coating/stretching method, wherein the coating layer comprises a polyurethane resin having a polycarbonate structure and a carboxyl group and exhibiting a glass transition point of not higher than 10° C., and further comprises not more than 20% by weight of a crosslinking agent having a heat-crosslinkable functional group in an amount of not less than 10 mmol/g.

    摘要翻译: 本发明涉及对顶涂剂具有优异的易粘合性能的聚酯薄膜,该聚酯薄膜可以适用于需要对顶涂剂的良好粘附性的用途。 提供了一种容易粘合的膜,其包括聚酯膜和通过涂布/拉伸法形成在聚酯膜上的涂层,其中涂层包含具有聚碳酸酯结构和羧基的聚氨酯树脂,并且具有玻璃化转变点 不高于10℃,并且还包含不大于20重量%的具有不少于10mmol / g的量的具有热交联官能团的交联剂。

    Method for manufacturing semiconductor device
    39.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07510980B2

    公开(公告)日:2009-03-31

    申请号:US11602180

    申请日:2006-11-21

    IPC分类号: H01L21/302

    摘要: A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.

    摘要翻译: 本发明的半导体器件的制造方法包括:在硅衬底上依次形成第一膜,第二膜和第三膜; 通过使用包括移相器的曝光掩模对抗蚀剂膜进行曝光和显影处理来对形成在第三膜上的抗蚀剂膜图案化; 通过使用第二膜的抗蚀剂膜的掩模来选择性地干蚀刻第三膜作为蚀刻停止,以将第三膜处理成第一图案; 使用第二膜进一步干蚀刻第三膜作为蚀刻停止部分地去除第三膜,从而将第三膜处理成第二图案; 使用具有第二图案的第三膜作为掩模来图案化第二膜; 以及使用图案化的第二膜作为掩模对第一膜进行构图。