公开(公告)号：US09871070B2

公开(公告)日：2018-01-16

申请号：US15016502

申请日：2016-02-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Hsuan Hsu ,  Ching-Chun Wang ,  Chien-Hsien Tseng ,  Chen-Jong Wang ,  Feng-Chi Hung ,  Wen-I Hsu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14678 ,  H01L27/14685 ,  H01L27/14687

Abstract: A backside illuminated (BSI) image sensor for biased backside deep trench isolation (BDTI) and/or biased backside shielding is provided. A photodetector is arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate. A pad structure is arranged in the peripheral opening, and protrudes through a lower surface of the peripheral opening to the interconnect structure. A conductive layer is electrically coupled to the pad structure, and extends laterally towards the photodetector from over the pad structure. A method for manufacturing the BSI image sensor is also provided.

公开(公告)号：US20170110497A1

公开(公告)日：2017-04-20

申请号：US15395071

申请日：2016-12-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： U-Ting Chen ,  Shu-Ting Tsai ,  Cheng-Ying Ho ,  Tzu-Hsuan Hsu ,  Shih Pei Chou

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

Abstract: An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.

公开(公告)号：US20160307943A1

公开(公告)日：2016-10-20

申请号：US14713172

申请日：2015-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Tzu-Hsuan Hsu ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

Abstract translation: 提供具有平坦的下表面的电介质栅格开口的背面照明（BSI）图像传感器。 像素传感器布置在半导体衬底内。 金属网格布置在像素传感器上方并且限定金属网格开口的侧壁。 介电栅格布置在金属栅格上方并限定电介质栅格开口的侧壁。 覆盖层布置在金属网格上方，并且限定电介质网格开口的平面下表面。

公开(公告)号：US20160247854A1

公开(公告)日：2016-08-25

申请号：US15144998

申请日：2016-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ying Chen ,  Dun-Nian Yaung ,  Chen-Jong Wang ,  Tzu-Hsuan Hsu

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

Abstract: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a convex micro-lens structure above a top surface of the color filters.

Abstract translation: 用于成像系统的滤色器阵列和微透镜结构以及形成滤色器阵列和微透镜结构的方法。 微透镜材料用于填充滤色器之间的空间以重新引导入射辐射，并且在滤色器的顶表面上方形成凸的微透镜结构。

公开(公告)号：US20150137296A1

公开(公告)日：2015-05-21

申请号：US14084758

申请日：2013-11-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ying Chen ,  Dun-Nian Yaung ,  Chen-Jong Wang ,  Tzu-Hsuan Hsu

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

Abstract: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a micro-lens structure above a top surface of the color filters.

Abstract translation: 用于成像系统的滤色器阵列和微透镜结构以及形成滤色器阵列和微透镜结构的方法。 微透镜材料用于填充滤色器之间的空间以重新引导入射辐射，并且在滤色器的顶表面上方形成微透镜结构。