Method for manufacturing solid-state image sensor
    31.
    发明授权
    Method for manufacturing solid-state image sensor 有权
    固态图像传感器的制造方法

    公开(公告)号:US08383497B2

    公开(公告)日:2013-02-26

    申请号:US13088465

    申请日:2011-04-18

    申请人: Takanori Watanabe

    发明人: Takanori Watanabe

    IPC分类号: H01L21/425

    摘要: A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, and in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.

    摘要翻译: 一种用于制造在基板上具有像素的传感器的方法,每个像素包括光电转换器,电荷 - 电压转换器和用于形成用于将光电转换器中的电荷转移到电荷 - 电压转换器的通道的栅极,包括以下步骤: 将离子注入到要形成光电转换器的衬底的靶区域中,其中步骤进行N次,并且在每个步骤中,离子沿着相对于法向的倾斜角的方向注入 衬底表面,离子注入的目标区域在每个步骤中是不同的,并且对于每个步骤,在基板上形成掩模,每个N个像素具有开口,沿着沿着方向周期性地排列的多个开口 表面与平面和方向确定的平面之间的交点。

    Disk drive hub with motor coil wiring arrangement to reduce thickness and suppressed torque decrease
    32.
    发明授权
    Disk drive hub with motor coil wiring arrangement to reduce thickness and suppressed torque decrease 失效
    具有电机线圈布线布置的磁盘驱动器集线器,以减小厚度并抑制转矩减小

    公开(公告)号:US08213114B2

    公开(公告)日:2012-07-03

    申请号:US12545751

    申请日:2009-08-21

    IPC分类号: G11B17/02

    摘要: The disk drive device includes a base member, a hub, a bearing unit which is arranged on the base member and which rotatably supports the hub, and a spindle drive unit which drives the hub to rotate. The spindle drive unit includes a stator core having a salient pole, a coil wound around the salient pole and a magnet opposed to the salient pole. The hub formed of magnetic material includes an outer cylinder portion engaged with an inner circumference of a recording disk and an inner cylinder portion to which an outer circumference of the magnet is fixed. The diameter of the inner cylinder portion is larger than the diameter of the outer cylinder portion.

    摘要翻译: 盘驱动装置包括基座构件,轮毂,布置在基座构件上并且可旋转地支撑轮毂的轴承单元和驱动轮毂旋转的主轴驱动单元。 主轴驱动单元包括具有凸极的定子芯,缠绕在凸极上的线圈和与凸极相对的磁体。 由磁性材料构成的毂包括与记录盘的内周接合的外筒部和固定有磁体的外周的内筒部。 内筒部的直径大于外筒部的直径。

    METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR
    34.
    发明申请
    METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR 有权
    制造固态图像传感器的方法

    公开(公告)号:US20110281392A1

    公开(公告)日:2011-11-17

    申请号:US13088465

    申请日:2011-04-18

    申请人: Takanori Watanabe

    发明人: Takanori Watanabe

    IPC分类号: H01L31/18

    摘要: A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions, of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.

    摘要翻译: 一种用于制造在基板上具有像素的传感器的方法,每个像素包括光电转换器,电荷 - 电压转换器和用于形成用于将光电转换器中的电荷转移到电荷 - 电压转换器的通道的栅极,包括以下步骤: 将离子注入到要形成光电转换器的衬底的靶区域中,其中步骤进行N次,在每个步骤中,离子沿着相对于法向的倾斜角度的方向注入 衬底表面,离子注入的目标区域在每个步骤中是不同的,并且对于每个步骤,在基板上形成掩模,每个N个像素具有开口,沿着沿着方向周期性地排列的多个开口 表面与平面和方向确定的平面之间的交点。

    IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM
    38.
    发明申请
    IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM 有权
    图像拾取器件和图像拾取系统

    公开(公告)号:US20090244340A1

    公开(公告)日:2009-10-01

    申请号:US12481008

    申请日:2009-06-09

    IPC分类号: H04N5/335

    摘要: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

    摘要翻译: 提供了一种图像拾取装置,包括将光转换成电荷的光电转换元件,用于将转换的电荷转移到浮动节点的传输门,源极跟随器晶体管,用于基于浮动节点的电压将信号输出到信号 线和钳位电路,在第一电压和第二电压下限幅信号线。

    IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM
    39.
    发明申请
    IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM 有权
    图像拾取装置和图像拾取系统

    公开(公告)号:US20090159945A1

    公开(公告)日:2009-06-25

    申请号:US12390836

    申请日:2009-02-23

    IPC分类号: H01L27/146

    摘要: To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.

    摘要翻译: 为了提供即使在高速读出操作中,相邻的光电转换元件之间的暗电流几乎或没有差异,并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上,半导体层101a,101b形成在阱中以构成光电二极管。 在半导体层101a,101b之间形成阱接触306。 元件隔离区域303b,303a设置在阱接触件和半导体层之间,并且通道阻挡层307b,307a设置在元件隔离区域303b,303a的下方。 导电层304设置在元件隔离区域303b上,侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a,宽度 侧壁308的b和设备隔离宽度c满足关系c> a> = b。