摘要:
A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, and in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.
摘要:
The disk drive device includes a base member, a hub, a bearing unit which is arranged on the base member and which rotatably supports the hub, and a spindle drive unit which drives the hub to rotate. The spindle drive unit includes a stator core having a salient pole, a coil wound around the salient pole and a magnet opposed to the salient pole. The hub formed of magnetic material includes an outer cylinder portion engaged with an inner circumference of a recording disk and an inner cylinder portion to which an outer circumference of the magnet is fixed. The diameter of the inner cylinder portion is larger than the diameter of the outer cylinder portion.
摘要:
There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
摘要:
A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions, of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.
摘要:
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要:
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要:
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要:
There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
摘要:
To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.
摘要翻译:为了提供即使在高速读出操作中,相邻的光电转换元件之间的暗电流几乎或没有差异,并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上,半导体层101a,101b形成在阱中以构成光电二极管。 在半导体层101a,101b之间形成阱接触306。 元件隔离区域303b,303a设置在阱接触件和半导体层之间,并且通道阻挡层307b,307a设置在元件隔离区域303b,303a的下方。 导电层304设置在元件隔离区域303b上,侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a,宽度 侧壁308的b和设备隔离宽度c满足关系c> a> = b。
摘要:
An instrument for a vehicle, by which an instrument board thereof can be seen as well at night as in the daytime is provided. In the instrument, an illuminating panel 50 including a prism sheet 50a transforms light from an LED 50b into planar light illumination for the instrument board 40, the prism sheet 50a on which prisms arranged in a sawtooth shape to form a prism alley P at a vehicle driver side thereof.