公开(公告)号：US08134190B2

公开(公告)日：2012-03-13

申请号：US12390836

申请日：2009-02-23

申请人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

发明人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

摘要： To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.

摘要翻译： 为了提供即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎或没有差异，并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上，半导体层101a，101b形成在阱中以构成光电二极管。 在半导体层101a，101b之间形成阱接触306。 元件隔离区域303b，303a设置在阱接触件和半导体层之间，并且通道阻挡层307b，307a设置在元件隔离区域303b，303a的下方。 导电层304设置在元件隔离区域303b上，侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a，宽度 侧壁308的b和装置隔离宽度c满足关系c>a≥b。

公开(公告)号：US07514732B2

公开(公告)日：2009-04-07

申请号：US11212630

申请日：2005-08-29

申请人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

发明人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L29/78

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

摘要： A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.

摘要翻译： 一种即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎没有或没有差异并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上，半导体层101a，101b形成在阱中以构成光电二极管。 在半导体层101a，101b之间形成阱接触306。 元件隔离区域303b，303a设置在阱接触件和半导体层之间，并且通道阻挡层307b，307a设置在元件隔离区域303b，303a的下方。 导电层304设置在元件隔离区域303b上，侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a，宽度 侧壁308的b和设备隔离宽度c满足关系c> a> = b。

公开(公告)号：US20060043393A1

公开(公告)日：2006-03-02

申请号：US11212630

申请日：2005-08-29

申请人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

发明人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

摘要： To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation. A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.

摘要翻译： 为了提供即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎或没有差异，并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上，半导体层101a，101b形成在阱中以构成光电二极管。 在半导体层101a，101b之间形成阱触点306。 元件隔离区域303b，303a设置在阱接触件和半导体层之间，并且沟道阻挡层307b，307a设置在元件隔离区域303b，303a的下方。 导电层304设置在元件隔离区域303b上，侧壁308设置在导电层304的侧面上。元件隔离区域303b的端部与导电层304之间的距离a， 侧壁308的宽度b和装置隔离宽度c满足关系c> a> = b。

公开(公告)号：US20090159945A1

公开(公告)日：2009-06-25

申请号：US12390836

申请日：2009-02-23

申请人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

发明人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

摘要： To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.

摘要翻译： 为了提供即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎或没有差异，并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上，半导体层101a，101b形成在阱中以构成光电二极管。 在半导体层101a，101b之间形成阱接触306。 元件隔离区域303b，303a设置在阱接触件和半导体层之间，并且通道阻挡层307b，307a设置在元件隔离区域303b，303a的下方。 导电层304设置在元件隔离区域303b上，侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a，宽度 侧壁308的b和设备隔离宽度c满足关系c> a> = b。

公开(公告)号：US20060044434A1

公开(公告)日：2006-03-02

申请号：US11214834

申请日：2005-08-31

申请人： Akira Okita ,  Masanori Ogura ,  Takanori Watanabe ,  Seiichiro Sakai

发明人： Akira Okita ,  Masanori Ogura ,  Takanori Watanabe ,  Seiichiro Sakai

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643

摘要： To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectroc conversion elements and providing a high sensitivity and a low dark current even in-a high-speed readout operation. A well is formed on a wafer, and diffusion layers are formed in the well to constitute a photodiode. A well contact is formed between the diffusion layers. Element isolation regions are provided between the well contact and the diffusion layers, and conductive layers are provided respectively on the element isolation regions, thereby reducing a difference in the minority carrier diffusions from the well contact to the photodiodes (diffusion layers).

摘要翻译： 为了提供即使在高速读出操作中，相邻光电转换元件之间的暗电流几乎或没有差异并且提供高灵敏度和低暗电流的固态图像拾取装置。 在晶片上形成阱，并且在阱中形成扩散层以构成光电二极管。 在扩散层之间形成良好的接触。 在阱接触和扩散层之间提供元件隔离区域，并且在元件隔离区域上分别设置导电层，从而减少少数载流子扩散与阱接触到光电二极管（扩散层）的差异。

公开(公告)号：US20120181590A1

公开(公告)日：2012-07-19

申请号：US13371738

申请日：2012-02-13

申请人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

发明人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

IPC分类号： H01L31/0224

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

摘要： A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a≧b.

摘要翻译： 即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎或没有差异的固态图像拾取装置也提供了高灵敏度和低暗电流，包括在晶片上形成的阱， 以及在阱中形成的构成光电二极管的半导体层。 在半导体层之间形成阱接触。 在阱接触和半导体层之间提供元件隔离区，并且在元件隔离区之下提供通道阻挡层。 导电层设置在元件隔离区上，侧壁设置在导电层的侧面上。 元件隔离区域的端部与导电层之间的距离a，侧壁的宽度b和器件隔离宽度c满足关系c>a≥b。

公开(公告)号：US07943975B2

公开(公告)日：2011-05-17

申请号：US12555854

申请日：2009-09-09

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

摘要翻译： 固态成像装置包括多个像素，每个像素包括光电转换单元，放大晶体管和复位晶体管。 光电转换单元布置在半导体衬底上的第一导电类型的阱中。 放大晶体管或复位晶体管的源极或漏极区域布置在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间。 在第一像素中，在源极或漏极区域与光电转换单元之间布置有比第一导电类型的阱高的杂质浓度的第一半导体区域，并且布置第一导电类型的第二半导体区域 在第一个半导体区域。

公开(公告)号：US20100020212A1

公开(公告)日：2010-01-28

申请号：US12555854

申请日：2009-09-09

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

摘要翻译： 固态成像装置包括多个像素，每个像素包括光电转换单元，放大晶体管和复位晶体管。 光电转换单元布置在半导体衬底上的第一导电类型的阱中。 放大晶体管或复位晶体管的源极或漏极区域布置在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间。 在第一像素中，在源极或漏极区域与光电转换单元之间布置有比第一导电类型的阱高的杂质浓度的第一半导体区域，并且布置第一导电类型的第二半导体区域 在第一个半导体区域。

公开(公告)号：US07638826B2

公开(公告)日：2009-12-29

申请号：US11214806

申请日：2005-08-31

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H01L31/062

CPC分类号： H01L27/14605 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14806 ,  H01L27/14812 ,  H04N3/155 ,  H04N3/1568 ,  H04N5/335 ,  H04N5/3452 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

摘要： An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

摘要翻译： 本发明的目的是防止像素之间的灵敏度差异。 设置有分别包括多个光电二极管101A和101B的多个单电池，分别对应于多个光电二极管布置的多个传输MOSFET 102A和102B以及放大并输出从多个光电二极管读取的信号的公共MOSFET 104。 由对应于光电二极管的光电二极管和传输MOSFET组成的单元内的每一对具有相对于彼此的平移对称性。 在单元电池内，包括一个复位MOSFET和选择MOSFET。

公开(公告)号：US20050269604A1

公开(公告)日：2005-12-08

申请号：US11146131

申请日：2005-06-07

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

摘要翻译： 本发明使用包括多个像素的图像拾取装置，所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元，用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电，其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上，第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。