摘要:
To provide a charged particle system capable of facilitating comparison between an actual pattern and an ideal pattern using not only two-dimensional CAD data but also three-dimensional CAD data. According to the present invention, using information about the angle of irradiation of a sample with a charged particle beam, a two-dimensional display of an ideal pattern (design data, such as CAD data, for example) is converted into a three-dimensional display, and the three-dimensional ideal pattern is displayed with an observation image. If the three-dimensional ideal pattern is superimposed on the observation image, comparison thereof can be easily carried out. Examples of the ideal pattern include a circuit pattern (CAD data) based on semiconductor design information, an exposure mask pattern based on an exposure mask used for exposure of a semiconductor wafer, and an exposure simulation pattern based on exposure simulation based on the exposure mask and an exposure condition can be used, and at least one of these patterns is displayed three-dimensionally.
摘要:
It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.
摘要:
A pattern shape evaluation method and semiconductor inspection system having a unit for extracting contour data of a pattern from an image obtained by photographing a semiconductor pattern, a unit for generating pattern direction data from design data of the semiconductor pattern, and a unit for detecting a defect of a pattern, through comparison between pattern direction data obtained from the contour data and pattern direction data generated from the design data corresponding to a pattern position of the contour data.
摘要:
An object of the present invention is to provide a sample measuring method and a sample measuring device suitable for evaluation of inclination of a pattern edge. To achieve the object, a method and a device for forming a plurality of contours of a pattern edge and evaluating the dimension between the contours are proposed below. Forming a plurality of contours allows evaluation of the degree of inclination of an edge portion of a pattern. Further, displaying evaluation values indicative of the degree of the inclination of the edge portion in an in-plane distribution form makes identifying the cause of taper formation easier.
摘要:
An object of the present invention is to provide a sample measuring method and a sample measuring device suitable for evaluation of inclination of a pattern edge. To achieve the object, a method and a device for forming a plurality of contours of a pattern edge and evaluating the dimension between the contours are proposed below. Forming a plurality of contours allows evaluation of the degree of inclination of an edge portion of a pattern. Further, displaying evaluation values indicative of the degree of the inclination of the edge portion in an in-plane distribution form makes identifying the cause of taper formation easier.
摘要:
Disclosed is a method wherein a template for template matching is created with high accuracy and high efficiency. With respect to each individual pattern constituting a basic circuit, pattern information regarding a plurality of layers in a semiconductor device is stored in a library. On the basis of the designation of the position and the layer, pattern information regarding the designated position and layer is extracted from the pattern information stored in the library. A template is created on the basis of the extracted pattern information.
摘要:
It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.
摘要:
Disclosed is a method wherein a template for template matching is created with high accuracy and high efficiency. With respect to each individual pattern constituting a basic circuit, pattern information regarding a plurality of layers in a semiconductor device is stored in a library. On the basis of the designation of the position and the layer, pattern information regarding the designated position and layer is extracted from the pattern information stored in the library. A template is created on the basis of the extracted pattern information.
摘要:
When the lengths of FEM wafers are automatically measured, not only the sizes of targets, the lengths of which are to be measured, are often varied from those in registration, but also the patterns of the targets are often deformed. Therefore, it is difficult to automatically determine whether the length measurement is possible or not. Therefore, the following are executed with a semiconductor inspection system: (1) a process of identifying the position of the contour line of an inspected image using a distance image calculated from a reference image, (2) a process of calculating a defect size image based on the position of the contour line with respect to the identified distance image, and detecting a defect candidate from the defect size image, and (3-1) a process of, upon detection of the defect candidate, calculating the size of the detected defect candidate, or (3-2) a process of detecting a portion different between the first and second contour lines as the defect candidate.
摘要:
A matching degree computing apparatus is provided for comparing an input image and an object template image and computing a matching degree between an input image and an object template image based on the compared result. The computing apparatus includes a transforming unit for transforming the input image so as to be matched to the template object region and a computing unit for computing a matching degree between the transformed input image and the template image. The transforming unit provides a shaping unit for shaping a non-background region to the form of the template object region in the object corresponding region of the input image and a processing unit for arranging the non-background region contacting with the template object corresponding region so that the non-background region has no substantial impact on the matching degree in the object non-corresponding region of the input image.