Process for anisotropic etching of semiconductors
    31.
    发明授权
    Process for anisotropic etching of semiconductors 有权
    半导体各向异性蚀刻工艺

    公开(公告)号:US08273663B2

    公开(公告)日:2012-09-25

    申请号:US12940169

    申请日:2010-11-05

    IPC分类号: H01L21/311 H01L21/302

    CPC分类号: H01L33/20 H01L21/465

    摘要: A method is provided for anisotropically etching semiconductor materials such as II-VI and III-V semiconductors. The method involves repeated cycles of plasma sputter etching of semiconductor material with a non-reactive gas through an etch mask, followed by passivation of the side walls by plasma polymerization using a polymer former. Using this procedure small pixels in down-converted light-emitting diode devices can be fabricated.

    摘要翻译: 提供了用于各向异性蚀刻诸如II-VI和III-V半导体的半导体材料的方法。 该方法涉及通过蚀刻掩模的非反应性气体的等离子体溅射蚀刻半导体材料的重复循环,然后通过使用聚合物成形器的等离子体聚合钝化侧壁。 使用这种方法可以制造下变频发光二极管器件中的小像素。