METHOD OF FABRICATING LIGHT EXTRACTOR
    6.
    发明申请
    METHOD OF FABRICATING LIGHT EXTRACTOR 有权
    制造光提取物的方法

    公开(公告)号:US20110117686A1

    公开(公告)日:2011-05-19

    申请号:US13000604

    申请日:2009-06-03

    IPC分类号: H01L33/44

    摘要: Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.

    摘要翻译: 公开了提取光的方法。 制造用于从衬底提取光的光学结构的方法包括以下步骤:(a)提供具有表面的衬底; (b)在所述基板的表面上设置多个结构,其中所述多个结构形成暴露所述基板的表面的敞开区域; (c)收缩至少一些结构物; 和(d)施加外涂层以覆盖开放区域中的收缩结构和基底表面。

    Etching process for semiconductors
    10.
    发明授权
    Etching process for semiconductors 失效
    半导体蚀刻工艺

    公开(公告)号:US08765611B2

    公开(公告)日:2014-07-01

    申请号:US12917826

    申请日:2010-11-02

    IPC分类号: H01L21/027

    摘要: A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.

    摘要翻译: 提供了蚀刻半导体的方法,例如II-VI或III-V半导体。 该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻,去除半导体并用反应气体清洁室。 蚀刻掩模包括光致抗蚀剂。 使用这种方法,可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。