公开(公告)号：US20120148310A1

公开(公告)日：2012-06-14

申请号：US13259096

申请日：2009-08-31

申请人： Eric G. Nelson ,  Thomas Anthony ,  David Sabo ,  Derex Patton

发明人： Eric G. Nelson ,  Thomas Anthony ,  David Sabo ,  Derex Patton

IPC分类号： G03G15/10

CPC分类号： G03G15/104

摘要： Liquid marking agent development assemblies, hard imaging devices, and liquid marking agent hard imaging methods are described. According to one aspect, a liquid marking agent development assembly includes a developer member comprising an outer surface, a marking agent delivery system configured to supply a liquid marking agent comprising a plurality of ink particles to a first location of the outer surface of the developer member, and a development system configured to adhere a plurality of the ink particles to the outer surface of the developer member, and wherein the development system is configured to adhere at least a majority of the adhered ink particles at a second location of the outer surface of the developer member which is upstream from the first location with respect to a direction of movement of the outer surface of the developer member.

摘要翻译： 描述了液体标记剂开发组件，硬成像装置和液体标记剂硬成像方法。 根据一个方面，一种液体标记剂显影组件包括显影剂构件，该显影剂构件包括外表面，标记剂递送系统被配置为将包含多个墨颗粒的液体标记剂供应到显影剂构件的外表面的第一位置 以及显影系统，被配置为将多个所述墨颗粒粘附到所述显影剂构件的外表面上，并且其中所述显影系统构造成将至少大部分粘附的墨颗粒粘附在所述显影剂外表面的外表面的第二位置处 所述显影剂构件相对于所述显影剂构件的外表面的移动方向从所述第一位置上游。

公开(公告)号：US20120026224A1

公开(公告)日：2012-02-02

申请号：US12848092

申请日：2010-07-30

申请人： Thomas Anthony ,  Napoleon J. Leoni ,  Henryk Birecki ,  Omer Gila ,  Michael H. Lee

发明人： Thomas Anthony ,  Napoleon J. Leoni ,  Henryk Birecki ,  Omer Gila ,  Michael H. Lee

IPC分类号： B41J29/38 ,  B41J2/06 ,  C09D11/02

CPC分类号： C09D11/52 ,  C09D11/322 ,  C09D11/36

摘要： An ink composition has controlled conductivity, and a digital printing system and a method of printing an ink employ an offset inkjet printing platform. The ink composition includes pigment particles dispersed in an oil-based dielectric carrier fluid with an oil-soluble dispersant. A concentration of dispersant is a fraction of a concentration of the pigment particles sufficient to render an electrical conductivity of the ink composition less than 100 pico Siemens per centimeter (pS/cm). The printing system includes an ink having an electrical conductivity less than or equal to about 300 pS/cm, an inkjet print head, a transfer medium, a developer, a remover and an image transferer. In the method of printing, the ink is nonelectrostatically jetted to the transfer medium, and developed into a fixed image. A portion of a supernatant is removed from the fixed image, and the fixed image is transferred to a media substrate.

摘要翻译： 油墨组合物具有控制的导电性，并且数字印刷系统和印刷方法使用偏移喷墨印刷平台。 油墨组合物包括分散在油性介电载体流体中的油溶性分散剂的颜料颗粒。 分散剂的浓度是足以使墨水组合物的电导率小于100皮克西门子每厘米（pS / cm）的颜料颗粒浓度的一部分。 印刷系统包括具有小于或等于约300pS / cm的导电性的墨水，喷墨打印头，转印介质，显影剂，去除剂和图像转印体。 在印刷方法中，油墨非绝缘地喷射到转印介质上，并显影成固定图像。 从固定图像中去除一部分上清液，并将固定的图像转印到培养基质上。

公开(公告)号：US20060002183A1

公开(公告)日：2006-01-05

申请号：US11222623

申请日：2005-09-09

申请人： Thomas Anthony ,  Manoj Bhattacharyya ,  Darrel Bloomquist ,  Judy Bloomquist

发明人： Thomas Anthony ,  Manoj Bhattacharyya ,  Darrel Bloomquist ,  Judy Bloomquist

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.

摘要翻译： 本发明的实施例提供一种磁存储器。 在一个实施例中，磁存储器包括磁存储单元和配置成提供磁场以写入磁存储单元的导体。 结构被配置为引导磁场并降低磁存储单元的矫顽力。

公开(公告)号：US20050237795A1

公开(公告)日：2005-10-27

申请号：US10832912

申请日：2004-04-26

申请人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

发明人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。

公开(公告)号：US20050152182A1

公开(公告)日：2005-07-14

申请号：US10753539

申请日：2004-01-08

申请人： Thomas Anthony ,  Frederick Perner ,  Heon Lee

发明人： Thomas Anthony ,  Frederick Perner ,  Heon Lee

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/15

摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.

摘要翻译： 一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。 电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。 热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量 。

公开(公告)号：US20050087511A1

公开(公告)日：2005-04-28

申请号：US10691139

申请日：2003-10-22

申请人： Manish Sharma ,  Thomas Anthony

发明人： Manish Sharma ,  Thomas Anthony

IPC分类号： H01L27/105 ,  B44C1/22 ,  G11C11/14 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L27/222 ,  H01L43/12

摘要： An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above the ferromagnetic materials, patterning the at least one mask layer, etching the ferromagnetic materials using the at least one mask layer as a first etch transfer mask, laterally reducing a planar dimension of the at least one mask layer to be narrower than the ferromagnetic materials, and etching a layer of the ferromagnetic materials using the reduced at least one mask layer as a second etch transfer mask, such that the ferromagnetic layer being etched becomes a different lateral size than another ferromagnetic layer of the ferromagnetic materials.

摘要翻译： 用于制造具有不同尺寸的存储单元层的存储器结构的示例性方法包括形成至少两层铁磁材料层，在铁磁材料上形成至少一个掩模层，图案化至少一个掩模层，使用 至少一个掩模层作为第一蚀刻转移掩模，横向地将所述至少一个掩模层的平面尺寸缩小成比所述铁磁材料窄，以及使用所述还原的至少一个掩模层来蚀刻所述铁磁材料层 第二蚀刻转移掩模，使得被腐蚀的铁磁层变成与铁磁材料的另一铁磁层不同的横向尺寸。

公开(公告)号：US20050083733A1

公开(公告)日：2005-04-21

申请号：US10686271

申请日：2003-10-15

申请人： Manoi Bhattacharyya ,  Thomas Anthony ,  Anthony Holden

发明人： Manoi Bhattacharyya ,  Thomas Anthony ,  Anthony Holden

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/15

摘要： A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.

摘要翻译： 用于读取存储单元的磁化取向的方法包括：向存储单元施加磁场，观察作为施加磁场的存储单元的电阻的任何变化，以及根据观察到的电阻变化确定磁化取向 存储单元。

公开(公告)号：US20050077555A1

公开(公告)日：2005-04-14

申请号：US10681483

申请日：2003-10-08

申请人： Frederick Perner ,  Thomas Anthony

发明人： Frederick Perner ,  Thomas Anthony

IPC分类号： H01L27/10 ,  G11C7/18 ,  G11C11/15 ,  H01L21/00 ,  H01L21/82 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A memory includes an array of magnetic memory cells, each magnetic memory cell being adapted to store a bit of information, interconnects in communication with the magnetic memory cells, and conductors in communication with the magnetic memory cells and the interconnects, the conductors filling spaces between adjacent magnetic memory cells of the array.

摘要翻译： 存储器包括磁存储器单元阵列，每个磁存储单元适于存储信息位，与磁存储单元通信的互连以及与磁存储单元和互连通信的导体，导体之间填充空间 阵列的相邻磁存储单元。

公开(公告)号：US20050052902A1

公开(公告)日：2005-03-10

申请号：US10657519

申请日：2003-09-08

申请人： Kenneth Smith ,  Thomas Anthony ,  Lung Tran

发明人： Kenneth Smith ,  Thomas Anthony ,  Lung Tran

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/15 ,  G11C11/1675

摘要： A memory device including an array of magnetic storage cells is disclosed. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnetic storage cell. The magnetic storage cells can be used in electronic systems such as a computer system or consumer electronic system.

摘要翻译： 公开了一种包括磁存储单元阵列的存储器件。 阵列中的每个磁存储单元包括用于向存储单元写入数据的一组导体和用于加热磁存储单元并从磁存储单元读取数据的第二组导体。 磁存储单元可用于诸如计算机系统或消费电子系统的电子系统中。

公开(公告)号：US20050018475A1

公开(公告)日：2005-01-27

申请号：US10624175

申请日：2003-07-22

申请人： Lung Tran ,  Thomas Anthony

发明人： Lung Tran ,  Thomas Anthony

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.