公开(公告)号：US20060082526A1

公开(公告)日：2006-04-20

申请号：US10969085

申请日：2004-10-20

申请人： Thomas Anthony ,  Lung Tran ,  Gary Gibson

发明人： Thomas Anthony ,  Lung Tran ,  Gary Gibson

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/2011 ,  G09G3/3216 ,  G09G3/3283 ,  G09G2300/06 ,  G09G2300/0809 ,  G09G2300/0885 ,  G09G2310/0205 ,  G09G2310/0262

摘要： A display element includes a variable optical element that changes appearance in response to changes in current, and a programmable resistance in series with the variable optical element. The resistance of the programmable resistance decreases in response to a first current in a first direction. The resistance of the programmable resistance increases in response to a second current in a second direction.

摘要翻译： 显示元件包括响应于电流变化而改变外观的可变光学元件和与可变光学元件串联的可编程电阻。 可编程电阻的电阻响应于第一方向上的第一电流而减小。 可编程电阻的电阻响应于第二方向上的第二电流而增加。

公开(公告)号：US20050052905A1

公开(公告)日：2005-03-10

申请号：US10658158

申请日：2003-09-08

申请人： Lung Tran ,  Thomas Anthony

发明人： Lung Tran ,  Thomas Anthony

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/02 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： G11C11/16

摘要： The invention includes a magnetic memory cell. The magnetic memory cell includes a reference layer having a preset magnetization. A barrier layer is formed adjacent to the reference layer. A sense layer is formed adjacent to the barrier layer. A first conductive write line is electrically connected to the reference layer. The magnetic memory cell further includes a second conductive write line having a gap, the gap being filled by at least a portion of the sense layer. A write current conducting through the second conductive write line is at least partially conducted through the portion of the sense layer, the write current increasing a temperature of the sense layer.

公开(公告)号：US06828610B2

公开(公告)日：2004-12-07

申请号：US10626447

申请日：2003-07-23

申请人： Thomas Anthony ,  Lung Tran ,  Manish Sharma

发明人： Thomas Anthony ,  Lung Tran ,  Manish Sharma

IPC分类号： H01L31062

CPC分类号： G11C11/16 ,  Y10S257/902

摘要： A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.

摘要翻译： 通过形成固定和感应层制造磁性隧道结; 并重新设定至少一层的磁化矢量。

公开(公告)号：US20070115718A1

公开(公告)日：2007-05-24

申请号：US11285991

申请日：2005-11-23

申请人： Manish Sharma ,  Lung Tran ,  Thomas Anthony

发明人： Manish Sharma ,  Lung Tran ,  Thomas Anthony

IPC分类号： G11C11/14

CPC分类号： G11C11/15 ,  H01L27/222 ,  H01L43/08

摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.

摘要翻译： 包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过 来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。 第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

公开(公告)号：US20050185453A1

公开(公告)日：2005-08-25

申请号：US11105054

申请日：2005-04-13

申请人： Lung Tran ,  Thomas Anthony

发明人： Lung Tran ,  Thomas Anthony

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

摘要翻译： 本发明包括堆叠磁存储器结构。 磁存储器结构包括堆叠磁存储器结构。 第一层包括第一多个磁性隧道结。 形成与第一层相邻的第二层。 第二层包括第二多个磁性隧道结。 层叠的磁存储器结构还包括连接到第一多个磁隧道结中的每一个和第二多个磁性隧道结的公共第一组导体。

公开(公告)号：US20050237795A1

公开(公告)日：2005-10-27

申请号：US10832912

申请日：2004-04-26

申请人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

发明人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。

公开(公告)号：US20050052902A1

公开(公告)日：2005-03-10

申请号：US10657519

申请日：2003-09-08

申请人： Kenneth Smith ,  Thomas Anthony ,  Lung Tran

发明人： Kenneth Smith ,  Thomas Anthony ,  Lung Tran

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/15 ,  G11C11/1675

摘要： A memory device including an array of magnetic storage cells is disclosed. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnetic storage cell. The magnetic storage cells can be used in electronic systems such as a computer system or consumer electronic system.

摘要翻译： 公开了一种包括磁存储单元阵列的存储器件。 阵列中的每个磁存储单元包括用于向存储单元写入数据的一组导体和用于加热磁存储单元并从磁存储单元读取数据的第二组导体。 磁存储单元可用于诸如计算机系统或消费电子系统的电子系统中。

公开(公告)号：US20050018475A1

公开(公告)日：2005-01-27

申请号：US10624175

申请日：2003-07-22

申请人： Lung Tran ,  Thomas Anthony

发明人： Lung Tran ,  Thomas Anthony

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

公开(公告)号：US06649423B2

公开(公告)日：2003-11-18

申请号：US09971347

申请日：2001-10-04

申请人： Thomas Anthony ,  Lung Tran ,  Manish Sharma

发明人： Thomas Anthony ,  Lung Tran ,  Manish Sharma

IPC分类号： H01L2100

CPC分类号： G11C11/16 ,  Y10S257/902

摘要： A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.

摘要翻译： 通过形成固定和感应层制造磁性隧道结; 并重新设定至少一层的磁化矢量。

公开(公告)号：US20120154480A1

公开(公告)日：2012-06-21

申请号：US12975101

申请日：2010-12-21

申请人： Thomas Anthony ,  Henryk Birecki

发明人： Thomas Anthony ,  Henryk Birecki

IPC分类号： B41J2/015 ,  B05D5/00 ,  C09D123/20 ,  C09D123/00 ,  C09D133/08

CPC分类号： C09D11/36 ,  C09D11/322

摘要： The present disclosure is drawn to an oil-based ink jet ink comprising a non-aqueous, oil-based liquid vehicle having a conductivity of less than less than 50 pS/cm; from 3 wt % to 12 wt % of a pigment; from 0.5 wt % to 6 wt % of a dispersant; and from 0.001 wt % to 0.5 wt % of a high molecular weight polymer that is partially or fully solubilized in the liquid vehicle, and having a weight average molecular weight from 50,000 to 5,000,000 Mw.

摘要翻译： 本公开内容涉及一种油性喷墨油墨，其包含导电率小于50pS / cm的非水性油基液体载体; 3重量％至12重量％的颜料; 0.5重量％至6重量％的分散剂; 和0.001重量％至0.5重量％的部分或完全溶解在液体载体中的高分子量聚合物，并且具有50,000至5,000,000MW的重均分子量。