公开(公告)号：US20140349468A1

公开(公告)日：2014-11-27

申请号：US14285874

申请日：2014-05-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke SUZUKI ,  Kazuya TAKAHASHI ,  Mitsuhiro OKADA ,  Katsuhiko KOMORI ,  Satoshi ONODERA

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02592 ,  H01L21/02645 ,  H01L21/02667

Abstract: The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.

Abstract translation: 本公开提供了一种用于填充形成在工件的绝缘膜上的沟槽的方法。 该方法包括在限定沟槽的壁表面上形成第一含杂质的非晶硅膜，在第一非晶硅膜上形成第二非晶硅膜，并在形成第二非晶硅膜之后退火工件。

公开(公告)号：US20130323915A1

公开(公告)日：2013-12-05

申请号：US13901712

申请日：2013-05-24

Applicant: Tokyo Electron Limited

Inventor： Katsuhiko KOMORI ,  Akinobu KAKIMOTO ,  Mitsuhiro OKADA ,  Nobuhiro TAKAHASHI

IPC: H01L21/02

CPC classification number: H01L21/02658 ,  C23C16/045 ,  C23C16/24 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/76224 ,  H01L21/76232

Abstract: A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process.

Abstract translation: 形成硅膜的方法包括第一成膜工艺，蚀刻工艺，掺杂工艺和第二成膜工艺。 在第一成膜工艺中，形成掺杂含有杂质的硅的硅膜，以便嵌入设置在被处理物上的槽。 在蚀刻工艺中，蚀刻在第一成膜工艺中形成的硅膜。 在掺杂工艺中，在蚀刻工艺中蚀刻的硅膜掺杂含有硼的杂质。 在第二成膜工艺中，形成掺杂含有杂质的硅的硅膜，以便嵌入在掺杂工艺中掺杂的硅膜。

公开(公告)号：US20130109155A1

公开(公告)日：2013-05-02

申请号：US13661153

申请日：2012-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Akinobu KAKIMOTO ,  Kazuhide HASEBE

IPC: H01L21/20

CPC classification number: H01L21/0245 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

Abstract: Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane.

Abstract translation: 提供了形成薄膜种子层的方法，其能够进一步提高薄膜的厚度均匀性。 在基材上形成作为薄膜种子的种子层的方法包括：使用氨基硅烷系气体，将至少包含在氨基硅烷系气体中的硅吸附在基材上。 并且至少含有氨基硅烷系气体中所含有的硅被吸附在基底上的至少具有等于或高于乙硅烷的高级硅烷系气体的硅，通过使用较高的 具有等于​​或高于乙硅烷的阶数的硅烷系气体。