Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device
    31.
    发明申请
    Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权
    多孔膜形成组合物,组合物的制备方法,多孔膜和半导体器件

    公开(公告)号:US20050165197A1

    公开(公告)日:2005-07-28

    申请号:US11041780

    申请日:2005-01-24

    摘要: The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

    摘要翻译: 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液,并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说,提供了制备多孔膜形成组合物的方法,其包括制备聚硅氧烷,二氧化硅或沸石颗粒(组分A)的步骤,赋予组分A交联性,并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外,提供了形成多孔膜的方法,其包括通过制备组分A制备多孔膜形成组合物,赋予组分A交联性并添加交联性抑制剂以暂时终止交联性的步骤; 将多孔膜形成组合物施加到基材上以形成膜,干燥膜,使颗粒交联,同时通过加热干燥膜除去交联性抑制剂。

    Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
    32.
    发明授权
    Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
    用于形成多孔膜的组合物,多孔膜及其形成方法,层间绝缘膜和半导体器件

    公开(公告)号:US07357961B2

    公开(公告)日:2008-04-15

    申请号:US10819544

    申请日:2004-04-07

    IPC分类号: C08G77/06 B05D3/02

    摘要: Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a  (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c  (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.

    摘要翻译: 本发明提供一种成膜组合物,其可以制造具有高强度和低介电常数的膜,其制造方法,多孔膜形成方法,多孔膜和在内部含有多孔膜的半导体器件。 更具体地提供了一种成膜组合物,其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物,其中可水解硅烷化合物选自由式(1) )和(2):<?in-line-formula description =“In-line Formulas”end =“lead”?(R&lt; 1&gt;)&lt; 4-a(1)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula- 公式描述=“在线公式”end =“lead”?>(R 3)3(R 5)3 -b-Si-R 7 -Si(R 6)3-c(R 4) )(2)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中R 1,R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2,R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数, b和c各自表示1或2的整数。

    Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
    34.
    发明授权
    Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
    用于形成多孔膜的组合物,多孔膜及其形成方法,层间绝缘膜和半导体器件

    公开(公告)号:US07126208B2

    公开(公告)日:2006-10-24

    申请号:US10706863

    申请日:2003-11-12

    IPC分类号: H01L23/58 H01L21/31

    摘要: Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a   (1) (R3)bSi(R4)4-b   (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

    摘要翻译: 提供一种用于形成多孔膜的组合物,其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜,高性能和高可靠性的半导体器件。 更具体地说,提供了一种用于形成多孔膜的组合物,其包含通过水解和缩合一种或多种由式(1)表示的硅烷化合物,或优选通过水解和共缩合一种或多种由式 (1)和另外一个由式(2),式(1)和(2)表示的硅烷化合物是:<?in-line-formula description =“In-line formula”end =“lead” (1)&lt;&lt; 1&gt;&lt; 1&gt;&lt; 1&gt; “In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?>(R <3> ) (2)<βin-line-formula description =“In-line Formulas”end =“tail”? >还提供了一种形成多孔膜的方法,包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。

    Film forming composition, porous film and their preparation
    35.
    发明授权
    Film forming composition, porous film and their preparation 失效
    成膜组合物,多孔膜及其制备方法

    公开(公告)号:US06680107B2

    公开(公告)日:2004-01-20

    申请号:US10045160

    申请日:2002-01-15

    IPC分类号: B32B326

    摘要: A composition comprising (A) a silanol group-bearing silicone resin comprising 30-100 mol % of T units: R1—SiZ3 and among the entire T units, 30-80 mol % of T-2 units containing only one silanol group: R1—Si(OH)Z′2 wherein R1 is a monovalent hydrocarbon group, Z is OH, hydrolyzable group or siloxane residue, at least one Z being a siloxane residue, and Z′ is a siloxane residue, and having a number average molecular weight of at least 100, and (B) a polymer resulting from an acrylate and/or methacrylate monomer is applied to a substrate and heated above the decomposition temperature of polymer (B) to form a porous film. The porous film is flat and uniform despite porosity, and has a low permittivity and high mechanical strength. It is best suited as an interlayer insulating layer when used in semiconductor device fabrication.

    摘要翻译: 一种组合物,其包含(A)含有硅烷醇基的硅氧烷树脂,其包含30-100摩尔%的T单元:R 1 -SiZ 3,在整个T单元中,30-80摩尔%的仅含有一个硅烷醇的T-2单元 基团:R 1 -Si(OH)Z'2其中R 1是一价烃基,Z是OH,可水解基团或硅氧烷残基,至少一个Z是硅氧烷残基,Z'是硅氧烷 残基,数均分子量为100以上,(B)将由丙烯酸酯和/或甲基丙烯酸酯单体得到的聚合物加到基材上并加热到高于聚合物(B)的分解温度以形成多孔膜 。 多孔膜尽管孔隙度是平坦的和均匀的,并且具有低介电常数和高机械强度。 当用于半导体器件制造时,它最适合作为层间绝缘层。

    Thexyl C.sub.1 -C.sub.4 alkyl dialkoxy silane
    36.
    发明授权
    Thexyl C.sub.1 -C.sub.4 alkyl dialkoxy silane 失效
    THEXYL C1-C4ALKYL DIALKOXY SILANE

    公开(公告)号:US5136072A

    公开(公告)日:1992-08-04

    申请号:US798515

    申请日:1991-11-26

    IPC分类号: C07F7/18 C08F4/602

    CPC分类号: C07F7/184

    摘要: Thexyl (C.sub.1 -C.sub.4) alkyl dialkoxy silanes are proposed as a class of novel organosilicon compounds such as thexyl methyl dimethoxy silane and thexyl n-butyl dimethoxy silane. These silane compounds can be synthesized by several different routes. For example, thexyl methyl dimethoxy silane is prepared starting from methyl phenyl chlorosilane which is subjected to the hydrosilation reaction with 2,3-dimethyl-2-butene to introduce a thexyl group and the compound is converted by the reaction with hydrogen chloride into thexyl methyl dichlorosilane which is methoxylated by the reaction with methyl alcohol.

    COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE
    37.
    发明申请
    COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE 审中-公开
    用于形成多孔膜的组合物,多孔膜及其形成方法,间隔绝缘膜和半导体器件

    公开(公告)号:US20070087124A1

    公开(公告)日:2007-04-19

    申请号:US11537697

    申请日:2006-10-02

    IPC分类号: C08J9/26 B05D3/02

    摘要: Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a  (1) (R3)bSi(R4)4-b  (2)Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

    摘要翻译: 提供一种用于形成多孔膜的组合物,其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜,高性能和高可靠性的半导体器件。 更具体地说,提供了一种用于形成多孔膜的组合物,其包含通过水解和缩合一种或多种由式(1)表示的硅烷化合物,或优选通过水解和共缩合一种或多种由式 (1)和另外一个由式(2),式(1)和(2)表示的硅烷化合物是:<?in-line-formula description =“In-line formula”end =“lead” (1)&lt;&lt; 1&gt;&lt; 1&gt;&lt; 1&gt; “In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?>(R <3> ) (2)<βin-line-formula description =“In-line Formulas”end =“tail”? >还提供了一种形成多孔膜的方法,包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。

    Thexyl trialkoxy silane
    40.
    发明授权
    Thexyl trialkoxy silane 失效
    THEXYL TRIALKOXY SILANE

    公开(公告)号:US5136073A

    公开(公告)日:1992-08-04

    申请号:US796360

    申请日:1991-11-22

    IPC分类号: C07F7/18

    CPC分类号: C07F7/1836

    摘要: Several thexyl trialkoxy silanes as a novel class of organosilicon compounds were synthesized by the reaction of dehydrochlorination condensation between thexyl trichlorosilane and an alcohol, e.g., methyl, ethyl, isopropyl and isobutyl alcohols, and characterized by the analytical data. These compounds are useful as an intermediate in the synthetic preparation of other organosilicon compounds, starting material of various silicones, surface-treatment agent of inorganic materials and additive in complex catalysts.